Dr. Dalia Abdel-Salam Mansour Elfiky
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Dr. Dalia Abdel-Salam Mansour Elfiky

Researcher
National Authority of Remote Sensing and Space Sciences, USA


Highest Degree
Ph.D. in Solid State Physics from Ain Shams University, Egypt

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Area of Interest:

Physics
100%
Radiation Physics
62%
Remote Sensing
90%
Astrophysics
75%
Space Science
55%

Research Publications in Numbers

Books
0
Chapters
0
Articles
0
Abstracts
0

Selected Publications

  1. Anwar, A., D. Elfiky, A.M. Ramadan and G.M. Hassan, 2017. Effect of γ-irradiation on the optical and electrical properties of fiber reinforced composites. Radiation Phys. Chem., 134: 14-18.
    CrossRef  |  Direct Link  |  
  2. Anwar, A., D.Elkiky, G. Hassan, M. Albona and M. Marchetti, 2015. Outgassing effect on spacecraft structure materials. Int. J. Astron. Astrophys. Space Sci., 2: 34-38.
  3. Nouh, S.A., Y.E. Radwan, D. Elfiky, M.M. Abutalib, R.A. Bahareth, T.M. Hegazy and S.S. Fouadc, 2014. Structure, thermal, optical and electrical investigation of the effect of heavy highly energetic ions irradiations in Bayfol DPF 5023 nuclear track detector. Radiat. Phys. Chem., 97: 68-74.
    CrossRef  |  Direct Link  |  
  4. Nouh, S.A., Y.E. Radwan, D. Elfiky, M.M. Abutalib, R.A. Bahareth andS.S. Fouad, 2013. Structural modifications induced in Bayfol polycarbonate due to heavy highly energetic ions irradiations. Radiat. Eff. Defects Solids, 168: 975-987.
    CrossRef  |  Direct Link  |  
  5. Elfiky, D., M. Yamaguchi, T. Sasaki, M. Elnawawy, T. Eldesouky and A. Ghitas, 2011. Numerical analysis for radiation resistant InGaP solar cell. Japanese J. Applied Phys., 50: 07230-07230.
  6. Elfiky, D., M.Yamaguchi, T. Sasaki, T. Takamoto and C.M.M. Imaizumi, 2010. Theoretical optimization of base doping concentration for radiation resistance of ingap subcells of ingap/gaas/ge based on minority-carrier lifet ime. J. Applied Phys., 49: 121201-121201.
  7. Elfiky, D., M. Yamaguchi, T. Sasaki, T. Takamoto and C.M.M. Imaizumi et al., 2010. Effect of base doping concentration on radiation-resistance for gaas sub-cells in InGaP/GaAs/Ge. Japanese J. Applied Phys., 49: 121202-121202.