Dr. Mourad Hebali
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Dr. Mourad Hebali

Assistant Professor
University Mustafa Stmboli, Mascara, Algeria

Highest Degree
Ph.D. in Electrical Engineering from National Technical University of Oran, Algeria

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Area of Interest:

Physical Science Engineering
100%
Electrical Measurements
62%
Electromagnetic Field
90%
Renewable Energy
75%
Power Electronics
55%

Research Publications in Numbers

Books
0
Chapters
0
Articles
0
Abstracts
0

Selected Publications

  1. Hebali, M., M. Bennaoum, M. Berka, A.B. Bey, M. Benzohra, D. Chalabi and A. Saidane, 2019. A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model. J. Electr. Eng., 70: 145-151.
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  2. Bey, A.B., A. Talbi, M. Hebali, M. Berka and F. Ducroquet, 2019. Numerical study of the impact of junction depth and the surface recombination velocity on electrical parameters of GaAs-solar cell. Int. J. Adv. Sci. Eng., 5: 1064-1071.
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  3. Berka, M., M. Hebali, A.B. Bey, M. Bennaoum and Z. Mahdjoub, 2019. Miniaturization of the bandpass microwave filter based on spiral metamaterial resonators. ICTACT J. Microelectron., 4: 693-696.
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  4. Berka, M., A.B. Bey, M. Hebali and Z. Mahdjoub, 2019. Study of the electromagnetic characteristics of a composite metamaterial transmission line (CRLH) CPW in coplanar technology. Int. J. Adv. Comput. Electron. Eng., 4: 1-10.
  5. Hebali, M., M. Barka, A.B. Bey, M.A. Abid, M. Benzohra, D. Chalabi and A. Saïdane, 2018. Impact of silicon thickness on electrical performance of solar cell in submicron technology. ICTACT J. Microelectron., 3: 665-668.
    CrossRef  |  Direct Link  |  
  6. Hebali, M., D. Berbara, M.A. Abid, P.M. Benzohra, P.D. Chalabi, P.A. Saïdane and M. Berka, 2018. An ultra low power and high performance of CMOS (6H-SiC) current mirrors in BSIM3v3 130nm technology. Int. J. Adv. Comput. Electron. Eng., 3: 1-9.
  7. Hebali, M., D. Berbara, M. Benzohra, D. Chalabi and A. Saïdane, 2018. A comparative study on electrical characteristics of MOS (Si0.5Ge0.5) and MOS (4H-SiC) transistors in 130nm technology with BSIM3v3 model. Int. J. Adv. Comput. Electron. Eng., 3: 1-6.
  8. Djerioui, M., M. Hebali, D. Chalabi and A. Saidane, 2018. A graphical method to study electrostatic potentials of 25 nm channel length DG SOI MOSFETs. J. Nano Electron. Phys., 10: 1-4.
  9. Berka, M., Z. Mahdjoub and M. Hebali, 2018. New design of dual-band bandpass microwave filter based on electromagnetic effect of metamaterial resonators. J. Electr. Eng., 69: 311-316.
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  10. Berka, M., M. Hebali, A.B. Bey and Z. Mahdjoub, 2018. Optimization of technological qualities of photovoltaic cells based on absorber metamaterial (SRRs) resonators. Majlesi J. Mechatronic Syst., 7: 9-16.
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  11. Berka, M., M. Hebali and Z. Mahdjoub, 2018. Study of the electromagnetic characteristics of a rectangular microwave absorber based on metamaterial. Int. J. Adv. Comput. Electron. Eng., 3: 1-6.
  12. Berbara, D., M. Hebali, M.A. Abid, M. Benzohra, D. Chalabi and A. Saïdane, 2018. Low voltage, high speed and high temperature of 1T-1C DRAM in CMOS 3C-SiC 250 nm technology. Adv. Eng.: Int. J., 2: 1-10.
  13. Hebali, M., D. Berbara, M. Benzohra, D. Chalabi, A. Saïdane and M. Bennaoum, 2017. CMOSi1-xGex 130 nm high sensitivity ultra-low power temperature sensor. Sensor Lett., 15: 328-332.
  14. Hebali, M., D. Berbara, M. Benzohra, D. Chalabi, A. Saïdane and A.B. Bey, 2017. MOSiC (3C, 4H and 6H) transistors 130nm by BSIM3v3 model in low voltage and low power. J. Eng. Sci. Technol. Rev., 10: 195-198.
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  15. Hebali, M., D. Berbara, M. Benzohra, D. Chalabi, A. Saidane and M. Bennaoum, 2017. 6H-SiC ion sensitive field effect transistor based pH-meter study. Sensor Lett., 15: 745-750.
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