Hi, I am Bouraoui Ilahi, My LiveDNA is 216.378
 
   
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Dr. Bouraoui Ilahi
 
Highest Degree: PostDoc Fellow in Low-Dimensional Materials from University of Monastir, Tunisia
 
Institute: King Saud University, Saudi Arabia
 
Area of Interest: Physical Science Engineering
  •   Semiconductor
  •   Ceramics
  •   Optoelectronics Systems
  •   Photovoltaiks
 
URL: http://livedna.org/216.378
 
My SELECTED Publications
1:    Alouane, M.H., R. Anufriev, N. Chauvin, H. Khmissi and K. Naji et al., 2011. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate. Nanotechnology, Vol. 22. .
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2:   Abdel-Rahman, M., S. Ilahi, M.F. Zia, M. Alduraibi, N. Debbar, N. Yacoubi and B. Ilahi, 2015. Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’sandwich structure. Infrared Phys. Technol., 71: 127-130.
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3:   Alouane, M.H., B. Ilahi, H. Maaref, B. Salem and V. Aimez et al., 2010. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. J. Applied Phys., Vol. 108. 10.1063/1.3460646.
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4:   Alouane, M.H.H., A. Helali, D. Morris, H. Maaref and V. Aimez et al., 2014. Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution. J. Luminescence, 145: 595-599.
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5:   Alouane, M.H.H., B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris and M. Gendry, 2011. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. J. Nanosci. Nanotechnol., 11: 9251-9255.
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6:   Alouane, M.H.H., B. Ilahi, L. Sfaxi and H. Maaref, 2011. InAs quantum dots on different Ga (In) As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: Electronic energy levels and carrier’s dynamic. J. Nanoparticle Res., 13: 5809-5813.
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7:   Alouane, M.H.H., N. Chauvin, H. Khmissi, K. Naji and B. Ilahi et al., 2013. Excitonic properties of wurtzite InP nanowires grown on silicon substrate. Nanotechnology, Vol. 24. .
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8:   Azeza, B., M.H.H. Alouane, B. Ilahi, G. Patriarche and L. Sfaxi et al., 2015. Towards InAs/InGaAs/GaAs quantum dot solar cells directly grown on Si substrate. Materials, 8: 4544-4552.
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9:   Chehata, N., A. Ltaief, A. Farzi, B. Ilahi and A. Bouazizi, 2013. Effect of functionalisation of MWCNTs on optical and morphological properties of MEH–PPV/MWCNTs nanocomposites. Int. J. Nanotechnol., 10: 577-586.
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10:   Chehata, N., A. Ltaief, B. Ilahi, B. Salam, A. Bouazizi, H. Maaref and E. Beyou, 2014. Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells. Synthetic Metals, 191: 6-11.
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11:   Chehata, N., A. Ltaief, B. Ilahi, B. Salem and A. Bouazizi et al., 2014. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application. J. Luminescence, 156: 30-35.
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12:   Chehata, N., A. Ltaief, E. Beyou, B. Ilahi and B. Salem et al., 2015. Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations. J. Luminescence, 168: 315-324.
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13:   Fekecs, A., A. Korinek, M. Chicoine, B. Ilahi, F. Schiettekatte, D. Morris and R. Ares, 2015. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure. Phys. Status Solidi A, 212: 1888-1896.
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14:   Fekecs, A., M. Chicoine, B. Ilahi, A.J. SpringThorpe and F. Schiettekatte et al., 2015. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions. Nuclear Instruments Methods Phys. Res. B, 359: 99-106.
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15:   Fekecs, A., M. Chicoine, B. Ilahi, F. Schiettekatte, P.G. Charette and R. Ares, 2013. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing. J. Phys. D: Applied Phys., Vol. 46. .
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16:   Ilahi, B., O. Nasr, B. Paquette, M.H. Alouane and N. Chauvin et al., 2016. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing. J. Alloys Compounds, 656: 132-137.
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17:   Khmissi, H., K. Naji, M.H.H. Alouane, N. Chauvin and C. Bru-Chevallier et al., 2012. InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates. J. Crystal Growth, 344: 45-50.
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18:   Khmissi, H., M.H.H. Alouane, N. Chauvin, K. Naji and G. Patriarche et al., 2011. Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates. Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials and Compound Semiconductor Week, May 22-26, 2011, Berlin, pp: 1-4.
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19:   Nasr, O., M.H.H. Alouane, B. Ilahi, B. Salem, L. Sfaxi and H. Maaref, 2014. Postgrowth intermixing of strain engineered InAs/GaAs quantum dots. J. Alloys Compounds, 615: 683-686.
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20:   Nasr, O., M.H.H. Alouane, H. Maaref, F. Hassen, L. Sfaxi and B. Ilahi, 2014. Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding material. J. Luminescence, 148: 243-248.
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21:   Paquette, B., B. Ilahi, V. Aimez and R. Ares, 2013. Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs. J. Crystal Growth, 383: 30-35.
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22:   Saidi, F., R. Hamila, B. Ilahi, A. Fouzri, M. Khalfioui and H. Maaref, 2011. Structural and optical properties of GaAs1-x N x/GaAs grown by molecular beam epitaxy. Sensor Lett., 9: 2316-2319.
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23:   Souaf, M., M. Baira, B. Ilahi, L. Saxi and H. Maaref, 2014. Numerical investigation of the postgrowth intermixing effects on the optical properties of InAs/GaAs quantum dots. Phys. B: Condensed Matter, 447: 7-11.
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24:   Souaf, M., M. Baira, O. Nasr, M.H.H. Alouane, H. Maaref, L. Sfaxi and B. Ilahi, 2015. Investigation of the InAs/GaAs quantum dots’ size: Dependence on the strain reducing layer’s position. Materials, 8: 4699-4709.
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25:   Zribi, J., B. Ilahi, D. Morris, V. Aimez and R. Ares, 2013. Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers. J. Crystal Growth, 384: 21-26.
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