Hi, I am Hadi Arabshahi, My LiveDNA is 98.2872
 
   
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Dr. Hadi Arabshahi
 
Highest Degree: Ph.D. in Physics from Payame Noor University, Tehran, Iran
 
Institute: Payame Noor University, Iran
 
Area of Interest: Physical Science Engineering
  •   Simulation
  •   Semiconductors
  •   Transistors
  •   Electron Transport
 
URL: http://livedna.org/98.2872
 
My SELECTED Publications
1:   Abbasi, F., M. Asmari and H. Arabshahi 2011. Climate change assessment over zagros during 2010-2039 by using statistical downscaling of ECHO-G model. Environ. Res. J., 5: 149-155.
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2:   Abbasi, F., M. Asmari and H. Arabshahi, 2011. Climate change assessment over Iran during future decades by using MAGICC-SCENGEN model. Int. J. Sci. Adv. Technol., 1: 89-91.
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3:   Abbasi, F., M. Asmari and H. Arabshahi, 2011. Scrutinizing drought's condition in the coasts of persian gulf. Int. J. Sci. Adv. Technol., 1: 79-82.
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4:   Abbasi, F., M. Asmari and H. Arabshahi, 2011. Simulation of forecasting assessment for Iran climate change using MAGICC-SCENGEN method. Int. J. Sci. Adv. Technol., 1: 83-88.
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5:   Aliabad, H.A.R., M.R. Benam and H. Arabshahi, 2009. Theoretical studies of the effect of Ti, Zr and Hf substitutions on the electronic properties of Alpha-Alumina. Int. J. Phys. Sci., 4: 437-442.
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6:   Aliabad, H.A.R., N. Mahmoodi and H. Arabshahi, 2011. The effect of magnetic impurity on the electronical and optical properties of corundum. Int. J. Phys. Sci., 6: 3745-3753.
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7:   Arabshahi, H. and A. Farzaneh, 2009. Effect of various material parameters on the calculated velocity-field relation in AlGaN at room temperature. J. Theor. Comput. Stud., 8: 104-104.
8:   Arabshahi, H. and D. Ghodsi, 2011. The effects of nonlinear gain and thermal carrier escape on dynamic characterizations of gaas/ingaas self-assembled quantum dot lasers. Res. J. Applied Sci., 6: 53-60.
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9:   Arabshahi, H. and D.G. Nahri, 2011. Application of the genetic algorithm to investigate nanostructures of GaAs/AlGaAs quantum wells. Int. J. Sci. Adv. Technol., 1: 36-40.
10:   Arabshahi, H. and D.G. Nahri, 2011. Monte carlo simulation of GaN submicron n+-n-n+ diode with AlGaN heterojunction cathode. Int. J. Eng. Res. Appl., 1: 74-77.
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11:   Arabshahi, H. and F. Sarlak, 2010. Calculation of low field electron transport characteristics in ge and effects of fast neutron radiation on its crystal structure. Int. Arch. Applied Sci. Technol., 1: 62-70.
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12:   Arabshahi, H. and F. Sarlak, 2011. Comparison of low field electron transport in zincblende and wurtzite 6h-sic structures for high gain device modeling. Int. J. Electr. Power Eng., 5: 18-23.
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13:   Arabshahi, H. and M. Rezaee Rokn-Abadi, 2010. Electron transport characteristics of 6H-SiC and 4H-SiC for high temperature device modeling. J. Sci. Arts, 2: 409-418.
14:   Arabshahi, H. and M. Rezaee Rokn-Abadi, 2011. Modeling of a 6H-SiC MESFET for high-power and high-gain applications. Indian J. Sci. Technol., 4: 1-3.
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15:   Arabshahi, H. and M. Rezaee, 2011. The effect of light illumination in photoionization of deep traps in GaN MESFETs buffer layer using an ensemble Monte Carlo simulation. Int. J. Phys. Sci., 6: 273-279.
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16:   Arabshahi, H. and M.R. Benam, 2008. A shock-capturing upwind disceritization method for characterization of SIC MESFETs. Int. J. Comput. Meth., 5: 341-349.
17:   Arabshahi, H. and M.R. Khalvati, 2008. Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs under high electric fields. Afr. Phys. Rev., .
18:   Arabshahi, H. and M.R. Khalvati, 2009. Electronic transport studies of bulk GaInP and AlGaInP based on an ensemble monte carlo calculation including three-valley band structure model. Afr. Phys. Rev., 3: 61-64.
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19:   Arabshahi, H. and M.R. Rokn-Abadi, 2010. Comparison of monte carlo and hydrodynamic model in electron transport characteristics of n+-i (n)-n+ ZnO diode. Int. J. Soft Comput., 5: 219-222.
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20:   Arabshahi, H. and M.R.R. Abadi, 2009. Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC. Afri. J. math. Comput. Sci. Res., 2: 189-195.
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21:   Arabshahi, H. and M.R.R. Abadi, 2009. Influence of electron-plasmon scattering on low-field mobility in ZnO. Afr. Phys. Rev., 3: 43-48.
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22:   Arabshahi, H. and M.R.R. Abadi, 2010. Analysis of dynamic and static characteristics of InGaAs/GaAs Self assembled quantum dot lasers. Armenian J. Phys., 3: 138-149.
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23:   Arabshahi, H. and M.R.R. Abadi, 2010. Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model. Brazilian J. Phys., 40: 267-272.
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24:   Arabshahi, H. and S. Golafrooz, 2010. Monte carlo based calculation of electron transport properties in bulk InAs, AlAs and InAlAs. Bulg. J. Phys., 37: 215-222.
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25:   Arabshahi, H. and S. Golafroz, 2009. Electron-plasmon scattering effect on hot electron transport properties in ZnO. Int. Rev. Phys., 12: 55-60.
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26:   Arabshahi, H., M.R. Khalvati and R.A.M. Rezaee, 2008. Comparison of steady-state and transient electron transport in InAs, InP and GaAs. Mod. Phys. Lett. B, 22: 1695-1702.
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27:   Arabshahi, H., 2006. Monte carlo simulations of electron transport in wurtzite phase gan mesfet including trapping effect. Modern Phys. Lett. B, 20: 787-794.
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28:   Arabshahi, H., 2007. Comparison of high field electron transport properties in wurtzite and zincblende phase GaN at room temperature. Mod. Phys. Lett. B, 21: 199-206.
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29:   Arabshahi, H., 2007. Monte carlo simulations of steady-state transport in Wurtzite Phase GaN submicrometer n+nn+ Diode. Mod. Phys. Lett. B, 21: 287-294.
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30:   Arabshahi, H., 2008. Calculation of electron hall mobility in GaSb, GaAs and GaN using an iterative method. Afr. Phys. Rev., 2: 131-135.
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31:   Arabshahi, H., 2008. Comparison of transient ballistic electron transport in bulk wurtzite phase 6H-SiC and GaN. Int. J. Mod. Phys. B, 22: 5289-5297.
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32:   Arabshahi, H., 2008. The frequency response and effect of trap parameters on the charactersitics of GaN MESFETs. J. Damghan Univ. Basic Sci., 1: 45-49.
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33:   Arabshahi, H., 2009. Comparison of SiC and ZnO field effect transistors for high power applications. Modern Phys. Lett. B, 23: 2533-2540.
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34:   Arabshahi, H., 2009. Comparison of hydrodynamic and monte carlo simulation of electron transport in submicrometre n+nn+ SiC structure. Int. J. Res. Rev. Appl. Sci., 1: 280-286.
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35:   Arabshahi, H., 2009. Computer simulation of ZNo field-effect transistor for high-power and high-temperature applications using the monte carlo method. Mod. Phys. Lett. B, 23: 1101-1109.
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36:   Arabshahi, H., 2009. Dynamic and static softening behaviors of AA2024 aluminum alloy under hot deformation applications. Int. J. Basic Appl. Sci., 9: 16-18.
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37:   Arabshahi, H., 2009. Hydrodynamic model for non-equilibrium and hot electron transport in ZnO MESFETs. J. Theor. Comput. Stud., 8: 0105-0105.
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38:   Arabshahi, H., 2009. Low-field electron transport properties in zincblende and wurtzite gan structures using an iteration model for solving boltzmann equation. Rom. J. Phys., 54: 547-555.
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39:   Arabshahi, H., 2009. Potential performance of SiC and GaNbased metal semiconductor field effect transistors. Brazilian J. Phys., 39: 35-38.
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40:   Arabshahi, H., 2009. Thermoelectric power and low-field electron mobility in AlGaN lattice matched to GaN. Turk. J. Phys., 33: 217-223.
41:   Arabshahi, H., 2010. A new simulation method for characterization of mechanical properties of nanomaterials. J. Eng. Applied Sci., 5: 361-362.
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42:   Arabshahi, H., 2010. Calculation of the electron drift mobility in Cr2+:ZnS and Cr2+:ZnSe materials by rode iteration model. Afr. J. Mathematics Comput. Sci. Res., 3: 206-209.
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43:   Arabshahi, H., 2010. Comparison of hot electron transport properties in wurtzite phase of ZnS, GaN and 6H-SiC. Indian J. Sci. Technol., 3: 844-848.
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44:   Arabshahi, H., 2010. The effect of gate length and temperature on ZnO MOSFETs operation. Adv. Applied Sci. Res., 1: 44-48.
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45:   Arabshahi, H., 2010. The effect of magnetic water on strength parameters of concrete. Alfa Universal Int. J. Chem., 1: 30-35.
46:   Arabshahi, H., 2010. The magnetic protection of cooling system in internal combustion engines against corrosion and scale formation. Alfa Universal Int. J. Chem., 1: 36-40.
47:   Arabshahi, H., 2011. A new calculation method for thermal and electrical characterization in CdTe and CdSe semiconductors. Int. J. Phys. Sci., 6: 3155-3161.
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48:   Arabshahi, H., 2011. A new method for solutions of differential equation by fast fourier transform. J. Mod. Math. Stat., 5: 21-24.
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49:   Arabshahi, H., 2011. A new study of polaron scattering phenomena in bulk semiconductor devices. Int. J. Sci. Adv. Technol., 1: 6-8.
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50:   Arabshahi, H., 2011. Calculation of high field electron transport properties in GaSb and GaAs. Int. J. Sci. Adv. Technol., 1: 26-29.
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51:   Arabshahi, H., 2011. Comparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure. Int. J. Phys. Sci., 6: 2327-2334.
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52:   Arabshahi, H., 2011. Comparison of low field electron transport characteristics in InP, GaP and Ga0.52In0.48P crystal structure. J. Sci. Arts, 11: 75-84.
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53:   Arabshahi, H., 2011. Three-valley model for the study of electron transport properties at very high electric field in bulk GaSb, Ga0.5Sb0.5As and GaAs materials. Int. J. Sci. Adv. Technol., 1: 19-23.
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54:   Arabshahi, H., 2011. Transient and steady-state electron transport propertie in bulk doped ternary nitride materials using an ensemble monte carlo method. World Applied Program., 1: 138-142.
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55:   Arabshahi, H., 2011. Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble monte carlo calculation including five-valley band structure model. J. Eng. Technol. Res., 3: 209-216.
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56:   Arabshahi, H., A. Mowlavi and M. Jafarizadeh, 2010. Monte carlo simulation of atom displacement damage in ZnO crystal structure by fast neutron radiation using MCNP code. J. Modell. Simul. Syst., 1: 50-53.
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57:   Arabshahi, H., A. Vatan-khahan and M.H. Tayarani, 2011. Comparison of low field electron transport properties in InN and GaN semiconductors by solving boltzmann equation using iteration model. Int. J. Sci. Adv. Technol., 1: 6-11.
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58:   Arabshahi, H., G.R. Ebrahimi and S. Gholafroz, 2010. A study of inelastic electron-polar optical phonon scattering in CdTe. J. Eng. Applied Sci., 5: 427-429.
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59:   Arabshahi, H., M. Gholizadeh and F. Shalian, 2009. Theoretical calculation of atom displacement damage in wurtzite GaN crystal structure by fast neutron radiation. Int. J. Basic Appl. Sci., 9: 19-21.
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60:   Arabshahi, H., M. Hakimi and R. Rezaee, 2010. Solvomagnetic crystallization of CO2+ and Mn2+ choloride under magnetic field and analization of field effect. Res. J. Applied Sci., 5: 334-336.
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61:   Arabshahi, H., M. Rezaee Rokn-Abadi and D. Ghodsi, 2011. A study of dynamic characterizations of GaAs/AlGaAs self-assembled quantum dot lasers. J. Eng. Applied Sci., 6: 58-63.
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62:   Arabshahi, H., M. Rezaee Rokn-Abadi and F. Badieian Baghsiahi, 2010. Monte carlo simulation of steady-state transport in submicrometer InP and GaAs n+ i(n) n+ diode. Modern Phys. Lett. B, 24: 549-560.
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63:   Arabshahi, H., M.R. Benam and B. Salahi and M. Gholizadeh, 2007. Comparison of high field steady state and transient electron transport in wurtzite GaN, Aln and InN. Mod. Phys. Lett. B, 21: 1715-1721.
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64:   Arabshahi, H., M.R. Khalvati and R.A.M. Rezaee, 2008. Monte carlo modeling of hot electron transport in bulk AlAs, AlGaAs and GaAs at room temperature. Mod. Phys. Lett. B, 22: 1777-1784.
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65:   Arabshahi, H., M.R. Rokn-Abadi and F. Badieyan, 2010. Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP. Maejo Int. J. Sci. Technol., 4: 159-168.
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66:   Arabshahi, H., M.R. Rokn-Abadi and F.B. Bagh-Siyahi, 2010. Comparison of high field electron transport properties in wurtzite phase of ZnO, GaN and SiC. Res. J. Applied Sci., 5: 215-220.
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67:   Arabshahi, H., M.R. Rokn-Abadi and S. Golafroz, 2009. Comparison of two-valley hydrodynamic model in bulk SiC and ZnO materials. Mod. Phys. Lett. B, 23: 2807-2818.
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68:   Arabshahi, H., M.R. Rokn-Abadi, F. Badieeyan1 and M.R. Khalvati, 2010. Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes. Indian J. Sci. Technol., 3: 37-40.
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69:   Arabshahi, H., M.R. Rokn-Abadi, F. Badieyan and Z.E. Moghadam, 2010. Steady-state and transient electron transport within Bulk III-V nitride semiconductors using an updated semiclassical Three-valley monte carlo method. Adv. Applied Sci. Res., 1: 19-25.
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70:   Arabshahi, H., M.R.R. Abadi and M. Dastras, 2008. Comparison of high and low field electron transport in AlGaN, AlN and GaN. Mod. Phys. Lett. B, 22: 2793-2799.
71:   Arabshahi1, H. and M. Asmari, 2010. Optimum designing of thin film filter layers of SiO2 and SnTe based on optical particle swarm optimizer. Int. J. Phys. Sci., 5: 057-061.
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72:   Asmari, M., F. Abbasi and H. Arabshahi, 2011. Preliminary time series analysis of mashhad air temperatures (1961-2005). Int. J. Sci. Adv. Technol., 1: 73-78.
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73:   Baedi, J. and H. Arabshahi, 2010. The effect of gate length on SOI-MOSFETs operation. Adv. Applied Sci. Res., 1: 14-18.
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74:   Baedi, J., H. Arabshahi, M.G. Armaki and E. Hosseini, 2010. Optical design of multilayer filter by using PSO algorithm. Res. J. Appl. Sci. Eng. Technol., 2: 56-59.
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75:   Baedi, J., M. Alipoor and H. Arabshahi, 2010. Effect of electron spin for d-orbital in electro-optical characteristics of ZnSe. Arch. Phys. Res., 1: 67-74.
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76:   Behdani, M., M.R. Rokn-Abadi, H. Arabshahi and M.R.R. Vaziri, 2009. Influence of hydrogen plasma on properties of transparent PEDT/PSS thin films. Int. J. Phys. Sci., 4: 729-733.
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77:   Binesh, A. and H. Arabshahi, 2011. Radon and radium concentrations in 120 samples of drinking springs and rivers water sources of northwest regions of Mashhad. Int. J. Water Resour. Environ. Eng., 3: 46-51.
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78:   Binesh, A., A.A. Mowlavi and H. Arabshahi, 2010. Monte carlo calculation of relative dose distribution and dosimetry parameters for an 192Ir source in a water phantom using MCNP4C. J. Exp. Sci., 1: 32-36.
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79:   Binesh, A., A.A. Mowlavi and H. Arabshahi, 2010. Radon and radium measurement in drinkables water supplies of shirvan region in iran by prassi system. Archi. Appl. Sci. Res., 2: 23-27.
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80:   Binesh, A., H. Arabshahi and Sadremomtaz, 2011. A new simple method for hydrogen atom and molecule ion in momentum space with using dirac delta functions. Asian J. Sci. Technol., 2: 001-004.
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81:   Binesh, A., H. Arabshahi, G.R. Ebrahimi and M.R.R. Abadi, 2008. Temperature dependence of high field electron transport properties in wurtzite phase GaN for device modeling. Int. J. Mod. Phys. B, 22: 3915-3922.
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82:   Binesh, A., S. Mohammadi, A. Mowlavi, P. Parvaresh and H. Arabshahi, 2010. Evaluation of radiation dose from radon ingestion and inhalation in drinking water sources of mashhad. Res. J. Applied Sci., 5: 221-225.
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83:   Binesh, A., Z. Pourhabib and H. Arabshahi, 2011. Evaluation of the radiation dose from radon ingestion and inhalation in springs, wells, rivers and drinking water of Ramsar in Iran. Int. J. Sci. Adv. Technol., 1: 92-95.
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84:   Binesh, A., Z. Pourhabib, H. Arabshahi and S. Mohammadi, 2011. Determination of radon and radium in springs, wells, rivers and drinking water samples of Ramsar in Iran. Int. J. Sci. Adv. Technol., 1: 55-58.
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85:   Binesh, A., Z. Pourhabib, H. Arabshahi and S. Mohammadi, 2011. Radon and radium measurement in water supplies of Sadatshahr and Javaherdeh regions in Iran. Int. J. Sci. Adv. Technol., 1: 81-81.
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86:   Ebrahimi, G.R. and H. Arabshahi, 2010. Effect of processing parameters and microcontent Nb on the microstructure and properties of medium carbon steels. J. Adv. Res. Mechanical Eng., 1: 182-187.
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87:   Ebrahimi, G.R. and H. Arabshahi, 2011. The influence of transient strain rate deformation on the microstructure of AA2024 aluminum alloy in the low temperature range. J. Eng. Technol. Res., 3: 22-25.
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88:   Ebrahimi, G.R., A.Z. Hanzaki and H. Arabshahi, 2008. The effect of strain rate variations on the microstructure and hot deformation behaviour of AA2024 aluminium alloy. Kovove Mater, 46: 229-233.
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89:   Ebrahimi, G.R., A.Z. Hanzaki, M. Haghshenas and H. Arabshahi, 2008. The effect of heat treatment on hot deformation behaviour of Al 2024. J. Mater. Process. Technol., 206: 25-29.
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90:   Ebrahimi, G.R., H. Arabshahi and M. Javdani, 2010. Hot deformation behavior of Nb-V microalloyed steel. J. Mechanical Eng. Res., 2: 92-96.
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91:   Ebrahimi, G.R., H. Keshmiri and H. Arabshahi, 2010. Mechanical characteristics of superaustenitic stainless steel type 30Cr25Ni32Mo3 at elevated temperatures. J. Eng. Appl. Sci., 5: 388-393.
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92:   Ebrahimi, G.R., M. Javdani and H. Arabshahi, 2010. Effect of thermo-mechanical parameters on microstructure and mechanical properties of microalloyed steels. Braz. J. Physics, 40: 454-458.
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93:   Gholizadeh, M., H. Arabshahi and M.R. Benam, 2005. The effect of magnetic field on scale prevention in the industrial boilers. Int. J. Applied Chem., 1: 84-89.
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94:   Gholizadeh, M., H. Arabshahi, M.R. Saeidi and B. Mahdavi, 2008. The effect of magnetic water on growth and quality improvement of poultry. Middle-East J. Sci. Res., 3: 140-144.
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95:   Ghorbani, E., A. Sadremomtaz, H. Arabshahi and T. Shirzad, 2011. The first principle studies of band structure calculations of MgAl2O4 and 2H-SiC using pseudopotential approaches. Int. J. Sci. Adv. Technol., 1: 106-108.
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96:   Golafroz, S. and H. Arabshahi, 2010.. Calculated electron steady-state drift velocity in lattice matched Ga0.5In0.5P and Al0.26Ga0.26In0.48P using a three-valley Monte Carlo simulation. Int. J. Physi. Sci., 5: 690-695.
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97:   Heidarzadeh, M., H. Keshmiri, G.R. Ebrahimi and H. Arabshahi, 2011. Influence of mould and insulation design on soundness of tool steel ingot by numerical simulation. Int. J. Sci. Adv. Technol., 1: 37-40.
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98:   Homayooni, S., F. Karimzadeh and H. Arabshahi, 2010. The survey of apple's domestic resources cost under the different foreign currency scenarios (during 1388 for Khorasan province's chosen cities). J. Econ. Theory, 4: 93-97.
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99:   Homayooni, S., F. Karimzadeh and H. Arabshahi, 2011. A survey on the effect of the industrial concentration index over the technical efficiency, Iran's sugar and industry. Int. J. Sci. Technol., 1: 17-22.
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100:   Jafarzadeh, H., M.R. Rokn-Abadi, H. Arabshahi and N. Shahtahmasbi, 2010. Hydrogen sensing properties of indium doped tin oxide thin films deposited by spray pyrolysis. Indian J. Sci. Technol., 3: 14-16.
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101:   Khalvati, M. R., H. Arabshahi, M. Izadifard, A.M. Gerami and H.R. Soleimani, 2010. Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation. Int. J. Phys. Sci., 5 : 683-689.
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102:   Khoshlahni, R. and H. Arabshahi, 2011. The effect of gate length on SOI-MOSFETs based on ZnO material. Int. J. Sci. Adv. Technol., 1: 52-55.
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103:   Mahmoodi, M. and H. Arabshahi, 2011. Monte carlo simulation of electron transport properties in submicron GaN and ZnO n+-n-n+ diodes. Int. J. Sci. Adv. Technol., 1: 64-66.
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104:   Mahmoodi, M. and H. Arabshahi, 2011. Study of electrical and optical properties of LEDs based on heterostructure InGaN/AlGaN/GaN. Int. J. Sci. Adv. Technol., 1: 41-44.
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105:   Modarresi, M., M.R. Roknabadi, N. Shahtahmasbi, D. Vahedi Fakhrabad and H. Arabshahi, 2010. A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device. Physica B, 406: 478-481.
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106:   Modarresi, M., M.R. Roknabadi, N. Shahtahmasbi, D. Vahedi and H. Arabshahi, 2010. Evaluation of electronic and transport properties of a nano-scale device in the presence of electric field. Physica E, 43: 402-404.
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107:   Mowlavi, A.A., A. Binesh and H. Arabshahi, 2010. Application of runge-kutta numerical methods to solve the schrodinger equation for hydrogen and positronium atoms. Res. J. Applied Sci., 5: 315-319.
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108:   Pourhabib, Z., A. Binesh and H. Arabshahi, 2011. Evaluation of the radiation dose from radon ingestion and inhalation in water supplies of sadatshahr and javaherdeh in Iran. Environ. Res. J., 5: 170-172.
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109:   Razmara, A., P. Khorshid, M. Ghoranneviss and H. Arabshahi, 2011. Measurement and studied on some plasma parameters in the edge of IR-T1 tokamak. Int. J. Sci. Adv. Technol., 1: 85-88.
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110:   Rezaee, M.A.M., H. Arabshahi and M.R. Benam, 2008. Discretization method of hydrodynamic equations for simulation of GaN MESFETs. Mod. Phys. Lett. B, 22: 1599-1608.
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111:   Rezaee, R.A.M., H. Arabshahi and M.R. Benam, 2008. Comparison of low field electron transport in SiC and GaN structures for high-power and high-temperature device modeling. Mod. Phys. Lett. B, 22: 1357-1366.
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112:   Solaimani, M., M. Izadifard, H. Arabshahi, M.R. Sarkardehi and M. Salmani, 2010. Genetic algorithm based diamagnetic shift investigations of the GaAs0.7Sb0.3/GaAs and Al0.3Ga0.7As quantum wells. J. Eng. Technol. Res., 2: 245-249.
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113:   Solaimani, M., M. Izadifard, H. Arabshahi, M.R. Sarkardehi and M. Salmani, 2010. Some new aspect of the application of Genetic algorithm to investigate nanostructures. J. Eng. Technol. Res., 2: 250-256.
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114:   Tabasi, F.S. and H. Arabshahi, 2011. Comparison of high field electron transport in wurtzite phase of GaN and AlGaN. Int. J. Sci. Adv. Technol., 1: 68-72.
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115:   Vatan-khahan, A., M.H. Tayarani, A. Sadremomtaz and H. Arabshahi, 2011. Comparison of electron scattering mechanisims and electron mobility in AlN and GaN at low electric field application. Int. J. Sci. Adv. Technol., 1: 116-119.
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116:   Vatan-khahan, A., R. Khoshlahni and H. Arabshahi, 2011. Calculated of electron mobility in InN by monte carlo and iteration models. Int. J. Sci. Adv. Technol., 1: 55-57.
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