Dr. Bouraoui  Ilahi

Dr. Bouraoui Ilahi

Assistant Professor
King Saud University, Saudi Arabia


Highest Degree
PostDoc Fellow in Low-Dimensional Materials from University of Monastir, Tunisia

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Biography

Dr. Bouraoui Ilahi is currently working as Assistant Professor in Department of Physics and Astronomy Faculty of Sciences, King Saud University Riyadh, Saudi Arabia. He has completed his PhD from Tunis University, Tunisia. Previously he was appointed as Assistant at University of Tunis/ Tunisia and University of Monastir, Tunisia, Associate Professor at University of Carthage/ Tunisia, Visiting Professor at University of Sherbrooke, Canada. His area of expertise includes Chemical Beam Epitaxy (CBE)of Multijunction Solar Cells and intermediated Band Solar Cells, CBE growth of InGaAs(P)/InP for THz application, Molecular Beam Epitaxy Growth and Post Growth Processing of Semiconductor Quantum Nanostructures: Quantum Well/ Wires/ Dots, High Resolution X Ray Diffraction, Optical Characterization: Photoluminescence, Photoreflectance, Photoluminescence of Excitation, time resolved Photoluminescence, and Numerical modeling: carrier’s confinement and charge transfer. He is also serving as reviewer for Nanotechnology, New journal of Physics, Journal of Physics, Applied Physics, Applied Physics Letters, Journal of Applied Physics, several Silence direct journals. He has 44 publications in journals. He is editor for Physical Sciences, Academia and member of editorial board in Applied Physics Research, Nanoscience and Nanotechnology Research.

Area of Interest:

Physical Science Engineering
100%
Semiconductor
62%
Ceramics
90%
Optoelectronics Systems
75%
Photovoltaiks
55%

Selected Publications

  1. Ilahi, B., O. Nasr, B. Paquette, M.H. Alouane and N. Chauvin et al., 2016. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing. J. Alloys Compounds, 656: 132-137.
    CrossRef  |  Direct Link  |  

  2. Souaf, M., M. Baira, O. Nasr, M.H.H. Alouane, H. Maaref, L. Sfaxi and B. Ilahi, 2015. Investigation of the InAs/GaAs quantum dots’ size: Dependence on the strain reducing layer’s position. Materials, 8: 4699-4709.
    CrossRef  |  Direct Link  |  

  3. Fekecs, A., M. Chicoine, B. Ilahi, A.J. SpringThorpe and F. Schiettekatte et al., 2015. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions. Nuclear Instruments Methods Phys. Res. B, 359: 99-106.
    CrossRef  |  Direct Link  |  

  4. Fekecs, A., A. Korinek, M. Chicoine, B. Ilahi, F. Schiettekatte, D. Morris and R. Ares, 2015. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure. Phys. Status Solidi A, 212: 1888-1896.
    CrossRef  |  Direct Link  |  

  5. Chehata, N., A. Ltaief, E. Beyou, B. Ilahi and B. Salem et al., 2015. Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations. J. Luminescence, 168: 315-324.
    CrossRef  |  Direct Link  |  

  6. Azeza, B., M.H.H. Alouane, B. Ilahi, G. Patriarche and L. Sfaxi et al., 2015. Towards InAs/InGaAs/GaAs quantum dot solar cells directly grown on Si substrate. Materials, 8: 4544-4552.
    CrossRef  |  Direct Link  |  

  7. Abdel-Rahman, M., S. Ilahi, M.F. Zia, M. Alduraibi, N. Debbar, N. Yacoubi and B. Ilahi, 2015. Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’sandwich structure. Infrared Phys. Technol., 71: 127-130.
    CrossRef  |  Direct Link  |  

  8. Souaf, M., M. Baira, B. Ilahi, L. Saxi and H. Maaref, 2014. Numerical investigation of the postgrowth intermixing effects on the optical properties of InAs/GaAs quantum dots. Phys. B: Condensed Matter, 447: 7-11.
    CrossRef  |  Direct Link  |  

  9. Nasr, O., M.H.H. Alouane, H. Maaref, F. Hassen, L. Sfaxi and B. Ilahi, 2014. Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding material. J. Luminescence, 148: 243-248.
    CrossRef  |  Direct Link  |  

  10. Nasr, O., M.H.H. Alouane, B. Ilahi, B. Salem, L. Sfaxi and H. Maaref, 2014. Postgrowth intermixing of strain engineered InAs/GaAs quantum dots. J. Alloys Compounds, 615: 683-686.
    CrossRef  |  Direct Link  |  

  11. Chehata, N., A. Ltaief, B. Ilahi, B. Salem and A. Bouazizi et al., 2014. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application. J. Luminescence, 156: 30-35.
    CrossRef  |  Direct Link  |  

  12. Chehata, N., A. Ltaief, B. Ilahi, B. Salam, A. Bouazizi, H. Maaref and E. Beyou, 2014. Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells. Synthetic Metals, 191: 6-11.
    CrossRef  |  Direct Link  |  

  13. Alouane, M.H.H., A. Helali, D. Morris, H. Maaref and V. Aimez et al., 2014. Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution. J. Luminescence, 145: 595-599.
    CrossRef  |  Direct Link  |  

  14. Zribi, J., B. Ilahi, D. Morris, V. Aimez and R. Ares, 2013. Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers. J. Crystal Growth, 384: 21-26.
    CrossRef  |  Direct Link  |  

  15. Paquette, B., B. Ilahi, V. Aimez and R. Ares, 2013. Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs. J. Crystal Growth, 383: 30-35.
    CrossRef  |  Direct Link  |  

  16. Fekecs, A., M. Chicoine, B. Ilahi, F. Schiettekatte, P.G. Charette and R. Ares, 2013. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing. J. Phys. D: Applied Phys., Vol. 46. .
    Direct Link  |  

  17. Chehata, N., A. Ltaief, A. Farzi, B. Ilahi and A. Bouazizi, 2013. Effect of functionalisation of MWCNTs on optical and morphological properties of MEH–PPV/MWCNTs nanocomposites. Int. J. Nanotechnol., 10: 577-586.
    CrossRef  |  Direct Link  |  

  18. Alouane, M.H.H., N. Chauvin, H. Khmissi, K. Naji and B. Ilahi et al., 2013. Excitonic properties of wurtzite InP nanowires grown on silicon substrate. Nanotechnology, Vol. 24. .
    Direct Link  |  

  19. Khmissi, H., K. Naji, M.H.H. Alouane, N. Chauvin and C. Bru-Chevallier et al., 2012. InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates. J. Crystal Growth, 344: 45-50.
    CrossRef  |  Direct Link  |  

  20. Saidi, F., R. Hamila, B. Ilahi, A. Fouzri, M. Khalfioui and H. Maaref, 2011. Structural and optical properties of GaAs1-x N x/GaAs grown by molecular beam epitaxy. Sensor Lett., 9: 2316-2319.
    Direct Link  |  

  21. Khmissi, H., M.H.H. Alouane, N. Chauvin, K. Naji and G. Patriarche et al., 2011. Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates. Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials and Compound Semiconductor Week, May 22-26, 2011, Berlin, pp: 1-4.
    Direct Link  |  

  22. Alouane, M.H.H., B. Ilahi, L. Sfaxi and H. Maaref, 2011. InAs quantum dots on different Ga (In) As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: Electronic energy levels and carrier’s dynamic. J. Nanoparticle Res., 13: 5809-5813.
    CrossRef  |  Direct Link  |  

  23. Alouane, M.H.H., B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris and M. Gendry, 2011. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. J. Nanosci. Nanotechnol., 11: 9251-9255.
    Direct Link  |  

  24. Alouane, M.H., R. Anufriev, N. Chauvin, H. Khmissi and K. Naji et al., 2011. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate. Nanotechnology, Vol. 22. .
    Direct Link  |  

  25. Alouane, M.H., B. Ilahi, H. Maaref, B. Salem and V. Aimez et al., 2010. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. J. Applied Phys., Vol. 108. 10.1063/1.3460646.
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