Dr. Chee Fuei Pien
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Dr. Chee Fuei Pien

Senior Lecturer
Universiti Malaysia Sabah, Malaysia

Highest Degree
Ph.D. in Nuclear Physics from Universiti Malaysia Sabah, Malaysia

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Area of Interest:

Physics
100%
Semiconductor Materials
62%
Modeling
90%
Electronics
75%
Nuclear Physics
55%

Research Publications in Numbers

Books
0
Chapters
0
Articles
0
Abstracts
0

Selected Publications

  1. Salleh, S., H.A. Amir, A.K. Tiwari and F.P. Chee, 2016. Collision cascade and spike effects of X-ray irradiation on optoelectronic devices. Acta Physica Polonica A, 130: 93-97.
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  2. Saafie, S., F.P. Chee and F.A. Haider, 2016. Mechanism of bijunction semiconductor device damage induced by heavy particles. Jurnal Teknologi, 78: 115-120.
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  3. Chee, F.P., C.A. Chen, J.H.W. Chang, Y.Y. Choo and J. Dayou, 2016. Data acquisition system for in situ monitoring of chemoelectrical potential in living plant fuel cells. J. Biophys. 10.1155/2016/6108056.
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  4. Abdul Amir, H.F., A.H. Husin, S. Salleh and F.P. Chee, 2016. A model for neutron radiation damage in Metal Oxide Semiconductor (MOS) structures. Key Eng. Mater., 706: 51-54.
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  5. Abdul Amir, H.F., A. Hassan, A. Alias and F.P. Chee, 2016. Calculation of the rate of helium ion dispersion in gallium arsenide compound. Key Eng. Mater., 705: 179-185.
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  6. Lee, S.K., A.S.A. Hamid, E. Saleh, H.L.H. Chong, F.P. Chee and J. Dayou, 2015. Power analysis of the Ocean Salinity and Temperature Energy Conversion (OSTEC) experimental model. Aust. J. Basic Applied Sci., 9: 279-284.
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  7. Haider, F.A.A. and F.P. Chee, 2015. Transient and post-irradiation response of optoelectronic devices to ionizing radiation. J. Phys.: Conf. Ser., Vol. 574, No. 1. 10.1088/1742-6596/574/1/012019.
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  8. Chee, F.P., J.H.W. Chang, S.K. Lee, A.S.A. Hamid and J. Dayou, 2015. Physical computations and parametric study of Ocean Salinity and Temperature Energy Conversion (OSTEC). Aust. J. Basic Applied Sci., 9: 273-278.
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  9. Chang, J.H.W., M.Y. Teh, J. Dayou and F.P. Chee, 2015. Proposed wound healing assessment using digital image analysis. Aust. J. Basic Applied Sci., 9: 258-263.
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  10. Abdul Amir, H.F. and F.P. Chee, 2015. Transport characteristics of secondary charged particles resulting from high energy neutron in silicon. Adv. Mater. Res., 1108: 79-84.
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  11. Lee, S.K., F.P. Chee, J. Dayou, S.A.H. Awang, E. Saleh and H.L.H. Chong, 2014. Improving power output prediction from ocean salinity and temperature energy converter using viscosity model. Adv. Environ. Biol., 8: 70-77.
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  12. Chee, F.P., H.F.A. Amir and S. Salleh, 2014. Defect generation in bipolar devices by ionizing radiation. IOSR J. Applied Phys., 6: 92-101.
  13. Chee, F.P. and H.F.A. Amir, 2014. Radiation hardness test of BJTs under designated application. J. Comput., 9: 2186-2190.
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  14. Abdul Amir, H.F. and F.P. Chee, 2014. Full scale measurement of wind intensity using in situ method. J. Clean Energy Technol., 2: 295-298.
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  15. Abdul Amir, H.F. and F.P. Chee, 2013. Evaluation on diffusion of Bipolar Junction Transistor (BJT) charge-carrier and its dependency on total dose irradiation. Adv. Mater. Res., 701: 71-76.
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  16. Abdul Amir, H.F. and F.P. Chee, 2013. Characterization of proton irradiation effect in semiconductor material. Int. J. Applied Phys. Math., 3: 341-344.
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  17. Abdul Amir, H.F. and F.P. Chee, 2012. Monte Carlo study of alpha (α) particles transport in nanoscale gallium arsenide semiconductor materials. AIP Conf. Proc., 1482: 559-563.
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  18. Abdul Amir, H.F. and F.P. Chee, 2012. Monte Carlo simulation of alpha (α) particles penetration in nanoscale silicon semiconductor materials. Adv. Mater. Res., 528: 237-240.
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  19. Abdul Amir, H.F. and F.P. Chee, 2011. Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation. Adv. Mater. Res., 173: 1-6.
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  20. Pien, C.F., H.F.A. Amir, S. Salleh and A. Muhammad, 2010. Effects of total ionizing dose on bipolar junction transistor. Am. J. Applied Sci., 7: 807-810.
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  21. Chee, F.P., H.F. Abdul Amir and S. Salleh, 2008. System design for enhanced in situ monitoring of ionizing radiation effects in semiconductor devices. Borneo Sci., 25: 59-69.
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