1. Tang, Z.S., N. Bolong, I. Saad and F.M. Said, 2013. Effects of feeding rate and voltage supplied on morphology of electrospun titanium dioxide nanofibers. Proceedings of the International Conference on Engineering and Applied Sciences, December 19-21, 2013, Hong Kong -.
2. Shuib, U.F., K.A. Mohamad, A. Alias, T.A. Tabet, B.K. Gosh and I. Saad, 2013. Modelling and simulation approach for organic thin-film transistors using MATLAB simulation. Proceedings of the 27th Regional Conference on Solid State Science and Technology, December 20-22, 2013, Kota Kinabalu, Malaysia -.
3. Seria, D.F.M.H., A. Alias, B.K. Gosh, A.M. Harun, I. Saad and K. Anuar, 2013. Different deposition techniques of soluble TIPS-pentacene organic thin film on flexible substrate for thin-film transistor applications. Proceedings of the 27th Regional Conference on Solid State Science and Technology, December 20-22, 2013, Kota Kinabalu, Malaysia -.
4. Saad, I., Z. Hamzah, C. Bun Seng, K. Anuar, B. Ghosh, N. Bolong and R. Ismail, 2013. Effects of S/D doping concentrations on vertical strained-SiGe impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). Proceedings of the 1st International Conference on Artificial Intelligence, Modelling and Simulation, December 3-5, 2013, Kota Kinabalu, Malaysia, pp: 476-480.
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5. Saad, I., M.Z.B. Hamzah, C.B. Seng, K.A. Mohamad, B.K. Ghosh, N. Bolong and R. Ismail, 2013. Performance analysis of vertical strained-SiGe impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). Proceedings of the 5th International Conference on Computational Intelligence, Modelling and Simulation, September 24-25, 2013, Seoul, Korea, pp: 375-380.
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6. Saad, I., H.M. Zuhir, C.B. Seng, A.R.A. Bakar and N. Bolong et al., 2013. Mobility enhancement on vertical strained-SiGe impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). Proceedings of the IEEE Region 10 Conference, October 22-25, 2013, Xi'an, China, pp: 1-5.
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7. Saad, I., H.M. Zuhir, C. Bun Seng, D. Pogaku and A.R. Bakar et al., 2013. Body doping analysis of vertical strained-SiGe impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). Proceedings of the IEEE Regional Symposium on Micro and Nanoelectronics, September 25-27, 2013, Langkawi, Malaysia, pp: 336-339.
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8. Saad, I., H.M. Zuhir, C. Bun Seng, A.R. Abu Bakar and N. Bolong et al., 2013. Impact of strain and DP position on the performance of vertical strained-SiGe impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP). Proceedings of the IEEE Region 10 Conference, October 22-25, 2013, Xi'an, China, pp: 1-5.
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9. Saad, I., C.B. Seng, H.M. Zuhir, B. Nurmin and A.M. Khairul et al., 2013. Single and dual strained channel analysis of vertical strained-SiGe impact ionization MOSFET (VESIMOS). Proceedings of the IEEE Regional Symposium on Micro and Nanoelectronics, September 25-27, 2013, Langkawi, Malaysia, pp: 320-323.
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10. Saad, I., B. Seng, Z. Hamzah, N. Bolong, K. Anuar, B. Ghosh and R. Ismail, 2013. Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). Proceedings of the IEEE Student Conference on Research and Development, December 16-17, 2013, Putrajaya, Malaysia -.
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11. Saad, I., B. Seng, Z. Hamzah, N. Bolong, K. Anuar, B. Ghosh and R. Ismail, 2013. Mitigating breakdown voltage with dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). Proceedings of the 1st International Conference on Artificial Intelligence, Modelling and Simulation, December 3-5, 2013, Kota Kinabalu, Sabah, Malaysia, pp: 471-475.
12. Saad, I., B. Seng, Z. Hamzah, N. Bolong, K. Anuar and B. Ghosh, 2013. Effect of the Ge mole fraction on the electrical characteristics of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). Proceedings of the 27th Regional Conference of Solid State Science and Technology, December 20-22, 2013, Kota Kinabalu, Malaysia -.
13. Rusnan, F.N., A. Alias, B.K. Gosh, A.M. Harun, I. Saad and K. Anuar, 2013. Comparative study of alignment techniques for deposition of TIPS-pentacene organic thin films on transparent substrate. Proceedings of the 27th Regional Conference on Solid State Science and Technology, December 20-22, 2013, Kota Kinabalu, Malaysia -.
14. Ghosh, B.K., I. Saad, K.A. Mohamad and S.S.M. Zainal, 2013. Intense UV enriched photo detection byhigher energy edge attuned coating on CSI detector. Int. J. Res. Eng. Technol., 2: 615-619.
    Direct Link  |  
15. Ghosh, B.K., I. Saad, K. Anuar, T.K.K. Teo and M.Z.S. Sapri, 2013. Novel approach of solar energy harvesting using UV compatible coating on SI detector. Proceedings of the 28th European Photovoltic Solar Energy Conference and Exhibition, September 30-October 4, 2013, Paris, France -.
16. Ghosh, B.K., I. Saad, K. Anuar, K.T.T. Kin and S.S.M. Zainal, 2013. cSi-detector photon management approaches for solar energy reaping aptness study. Proceedings of the IEEE 2nd International Conference on Clean Energy and Technology, November 18-20, 2013, Pulau Langkawi, Malaysia -.
17. Ghosh, B.K., I. Saad and A. Yamamoto, 2013. Optoelectronic properties of improved GaN semiconductor on Si(111) using growth approaches and different interlayer's. Int. J. Mater. Sci. Applic., 2: 43-46.
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18. Farok, U., Y. Falinie, A. Alias, B. Gosh, I. Saad, A. Mukifza and K. Anuar, 2013. Electrical characterization and source-drain voltage dependent mobility of p-channel organic field-effect transistors using MATLAB simulation. Proceedings of the 1st International Conference on Artificial Intelligence, Modelling and Simulation, December 3-5, 2013, Kota Kinabalu, Malaysia, pp: 459-461.
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19. Bolong, N., T. Tabet, I. Saad and B. Hamsa, 2013. Removal by membrane processes in wastewater treatment for persistent contaminants. Proceedings of the Workshop on Progress in Wastewater Treatment and Reuse Technology, December 19-20, 2013, Kota Kinabalu, Malaysia -.
20. Bolong, N., S. Kumaresan, I. Saad, T. Thasan, R. Ramli, A.F. Ismail and T. Matsuura, 2013. Tongkat Ali extraction using hollow fiber membranes modified by negatively charged-modifying macromolecule. Proceedings of the Conference on Membrane Science and Technology, August 27-29, 2013, Kuala Lumpur, Malaysia -.
21. Anuar, K., A. Alias, I. Saad, B. Gosh, K. Uesugi and H. Fukuda, 2013. Mixed P3HT/PCBM organic thin-film transistors: Relation between morphology and electrical characteristics. Proceedings of the 3rd International Conference on Engineering and Applied Science, November 7-9, 2013, Osaka, Japan -.
22. Anuar, K., A. Alias, I. Saad, B. Gosh, K. Uesugi and H. Fukuda, 2013. Effect of [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors. Proceedings of the IEEE Regional Symposium on Micro and Nanoelectronics, September 25-27, 2013, Langkawi, Malaysia, pp: 179-182.
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23. Tan, S.E., H.T. Yew, M.S. Arifianto, I. Saad and K.T.K. Teo, 2012. Queue management for network coding in Ad Hoc networks. Proceedings of the 3rd International Conference on Intelligent Systems, Modelling and Simulation, February 8-10, 2012, Kota Kinabalu, Sabah, Malaysia, pp: 657-662.
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24. Shee, E.T., W.S. Zhan, K.A. Mohamad, I. Saad and K.T.K. Teo, 2012. Network coding based packets queue operation for wireless ad hoc networks. Int. J. Simul.-Syst. Sci. Technol., 13: 23-29.
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25. Saad, I., N. Bolong, K.A. Muhamad, A.B.A. Rahman and V.K. Arora, 2012. Ballistic saturation velocity modelling beyond Ohm's law. Proceedings of the 4th International Conference on Computational Intelligence, Modelling and Simulation, September 25-27, 2012, Kuantan, Malaysia, pp: 422-427.
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26. Saad, I., K.A. Mohamad, N. Bolong, A.B.A. Rahman and V.K. Arora, 2012. Numerical evaluation of low-dimensional energy spectrum and carrier statistics for nanostructure device application. Int. J. Simul. Syst. Sci. Technol., 13: 45-51.
    Direct Link  |  
27. Saad, I., H.M. Zuhir, D. Pogaku, A.R. Abu Bakar and N. Bolong et al., 2012. Investigation of incorporating Dielectric Pocket (DP) on vertical strained-SiGe impact ionization MOSFET (VESIMOS-DP). Proceedings of the IEEE International Conference on Semiconductor Electronics, September 19-21, 2012, Kuala Lumpur, Malaysia, pp: 249-253.
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28. Saad, I., D. Pogaku, A.R. Abu Bakar, N Bolon., B. Ghosh, R. Ismai and U. Hashim, 2012. Enhanced performance analysis of vertical strained-sige impact ionization MOSFET (VESIMOS). Proceedings of the IEEE International Conference on Semiconductor Electronics, September 19-21, 2012, Kuala Lumpur, Malaysia, pp: 177-181.
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29. Saad, I., A.M. Khairul, N. Bolong, A.A.R. Bakar and V.K. Arora, 2012. Energy spectrum and carrier statistics numerical analysis for nanostructure device application. Proceedings of the 3rd International Conference on Intelligent Systems, Modelling and Simulation, February 8-10, 2012, Kota Kinabalu, Sabah, Malaysia, pp: 751-755.
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30. Mohamad, K.A., I. Saad and H. Fukuda, 2012. Organic thin-film transistors based on naphthalene-bis(dicarboximide) polymer for n-channel organic memory using hole-acceptor layer. Proceedings of the International Conference on Enabling Science and Nanotechnology, January 5-7, 2012, Johor Bahru, Johor, Malaysia, pp: 1-2.
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31. Mohamad, K.A., A. Alias, I. Saad, K. Uesugi and H. Fukuda, 2012. Organic field-effect transistors with reversible threshold voltage shifts for memory element. Int. J. Simul.-Syst. Sci. Technol., 13: 42-47.
    Direct Link  |  
32. Mohamad, K.A., A. Alias, I. Saad, K. Uesugi and H. Fukuda, 2012. All-polymer organic field-effect transistors with memory element. Proceedings of the 3rd International Conference on Intelligent Systems, Modelling and Simulation, February 8-10, 2012, Kota Kinabalu, Sabah, Malaysia, pp: 743-746.
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33. Mohamad, K.A., A. Alias, I. Saad, B.K. Gosh, K. Uesugi and H. Fukuda, 2012. Organic field-effect transistors for nonvolatile memory devices using charge-acceptor layers. Proceedings of the IEEE International Conference on Semiconductor Electronics, September 19-21, 2012, Kuala Lumpur, Malaysia, pp: 750-754.
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34. Kow, W.Y., W.L. Khong, Y.K. Chin, I. Saad and K.T.K. Teo, 2012. Enhancement of markov chain monte carlo convergence speed in vehicle tracking using genetic operator. Proceedings of the 4th International Conference on Computational Intelligence, Modelling and Simulation, September 25-27, 2012, Kuantan, Malaysia, pp: 270-275.
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35. Ghosh, B.K., I. Saad, K.A. Mohamad, N. Bolong, N. Parimon, A. Alias and M.Z. Hamzah, 2012. Compatibility issues of Si technology with higher band gap materials for RF applications. Proceedings of the IEEE International Conference on Semiconductor Electronics, September 19-21, 2012, Kuala Lumpur, Malaysia, pp: 407-410.
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36. Wei, Y.K., L.K. Wei, T.Y. How, I. Saad and K.T.K. Teo, 2011. Adapting MCMC with CUSUM path plot for overlapped vehicle tracking. Int. J. Simul.-Syst. Sci. Technol., 12: 36-43.
    Direct Link  |  
37. Saad, I., N. Bolong, P. Divya, B.K. Ghosh and K.T.T. Kin, 2011. Design and simulation analysis of vertical double-gate MOSFET (VDGM) structure for Nano-device application. Int. J. Simul.-Syst. Sci. Technol., 12: 7-11.
    Direct Link  |  
38. Saad, I., N. Bolong, P. Divya and K.T.T. Kin, 2011. Performance design and simulation analysis of Vertical Double Gate MOSFET (VDGM). Proceedings of the 13th International Conference on Modelling and Simulation, March 30-April 1, 2011, Cambridge, UK., pp: 518-521.
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39. Saad, I., A.M. Khairul, N. Bolong, A.R. Abu Bakar and V.K. Arora, 2011. Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET. Int. J. Simul.-Syst. Sci. Technol., 12: 1-6.
    Direct Link  |  
40. Pogaku, D. and I. Saad, 2011. Effects of S/D doping concentrations on strained SiGe vertical I-MOS device characteristics. Proceedings of the 3rd International Conference on Electronics Computer Technology, April 8-10, 2011, Kanyakumari, India, pp: 294-297.
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41. Pin, Y.H., L.B. Hoe, K.T.T. Kin and I. Saad, 2011. Swimming motion control for biometric fish robot by utilizing turning coefficient. Proceedings of the 2nd International Conference on Intelligent Systems, Modelling and Simulation, January 25-27, 2011, Kuala Lumpur, pp: 143-147.
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42. Mohamad, K.A., I. Saad, K. Uesugi and H. Fukuda, 2011. Optical responses and optically program-electrically erase memory in organic transistors. Proceedings of the IEEE 2nd International Conference on Photonics, October 17-19, 2011, Kota Kinabalu, Malaysia, pp: 1-4.
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43. Kow, W.Y., W.L. Khong, Y.K. Chin, I. Saad and K.T.K. Teo, 2011. CUSUM-variance ratio based Markov chain Monte Carlo algorithm in overlapped vehicle tracking. Proceedings of the International Conference on Computer Applications and Industrial Electronics, December 4-7, 2011, Penang, Malaysia, pp: 55-60.
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44. Kow, W.Y., W.L. Khong, F. Wong, I. Saad and K.T.K. Teo, 2011. Adaptive tracking of overlapping vehicles via Markov chain Monte Carlo with CUSUM path plot algorithm. Proceedings of the 3rd International Conference on Computational Intelligence, Communication Systems and Networks, July 26-28, 2011, Bali, Indonesia, pp: 253-258.
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45. Khong, W.L., W.Y. Kow, Y.K. Chin, I. Saad and K.T.K. Teo, 2011. Overlapping vehicle tracking via adaptive particle filter with multiple cues. Proceedings of the IEEE International Conference on Control System, Computing and Engineering, November 25-27, 2011, Penang, Malaysia, pp: 460-465.
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46. Khong, W.L., W.Y. Kow, L. Angeline, I. Saad and K.T.K. Teo, 2011. Overlapped vehicle tracking via enhancement of particle filter with adaptive resampling algorithm. Int. J. Simulation Syst. Sci. Technol., 12: 44-51.
    Direct Link  |  
47. Khong, W.L., W.Y. Kow, F. Wong, I. Saad and K.T.K. Teo, 2011. Enhancement of particle filter approach for vehicle tracking via adaptive resampling algorithm. Proceedings of the 3rd International Conference on Computational Intelligence, Communication Systems and Networks, July 26-28, 2011, Bali, Indonesia, pp: 259-263.
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48. Ghosh, B.K., I. Saad and A. Yamamoto, 2011. High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE. Proceedings of the IEEE Regional Symposium on Micro and Nanoelectronics, September 28-30, 2011, Kota Kinabalu, pp: 392-395.
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49. Bolong, N., J. Makinda, L. Gungat, A. Amaludin and I. Saad, 2011. Is there any influence by the admission category to the learning outcomes achievement? Proceedings of the 3rd International Congress on Engineering Education, December 7-8, 2011, Kuala Lumpur, Malaysia, pp: 95-100.
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50. Bolong, N., I. Saad, A.F. Ismail, M.R. Salim, D. Rana and T. Matsuura, 2011. Charge property modeling of nanofiltration hollow fiber membranes. Int. J. Simul.-Sci. Syst. Technol., 12: 12-16.
    Direct Link  |  
51. Bakar, A.R.A. and I. Saad, 2011. Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET. Proceedings of the IEEE Regional Symposium on Micro and Nanoelectronics, September 28-30, 2011, Kota Kinabalu, pp: 100-103.
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52. Angeline, L. W.L. Khong F. Wong, I. Saad and K.T.K. Teo, 2011. Multiple vehicles license plate tracking and recognition via isotropic dilation. Proceedings of the 3rd International Conference on Computational Intelligence, Communication Systems and Networks, July 26-28, 2011, Bali, Indonesia, pp: 54-59.
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53. Saad, I., M.L. Tan, M.T. Ahmadi, R. Ismail and V.K. Arora, 2010. The dependence of saturation velocity on temperature, inversion charge and electric field in a nanoscale MOSFET. Int. J. Nanoelectron. Mater., 3: 17-34.
    Direct Link  |  
54. Saad, I., M.A. Riyadi, M. Taghi, F.M.N. Zul Atfyi and V.K. Arora, 2010. Analytical analysis of ballistic drift velocity in low-dimensional nano-devices. Proceedings of the 4th Asia International Conference on Mathematical/Analytical Modelling and Computer Simulation, May 26-28, 2010, Kota Kinabalu, Malaysia, pp: 601-605.
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55. Saad, I., M.A. Riyadi, F.M.N. Zul Atfyi, A.M.A. Hami and R. Ismail, 2010. Enhanced performance of Vertical Double Gate MOSFET (VDGM) with Oblique Rotating Implantation (ORI) method. Proceedings of the IEEE International Conference on Semiconductor Electronics, June 28-30, 2010, Melaka, Malaysia, pp: 175-179.
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56. Saad, I., M.A. Riyadi, F.M.N. Zul Atfyi and R. Ismail, 2010. Reduced parasitic capacitances analysis of nanoscale vertical MOSFET. Proceedings of the IEEE International Conference on Semiconductor Electronics, June 28-30, 2010, Melaka, Malaysia, pp: 25-29.
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57. Riyadi, M.A., J.E. Suseno, F.M.N. Zul Atfyi, A.M.A. Hamid, I. Saad and R. Ismail, 2010. Investigation of short channel immunity of fully depleted double gate MOS with vertical structure. Proceedings of the IEEE International Conference on Semiconductor Electronics, June 28-30, 2010, Melaka, Malaysia, pp: 30-33.
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58. Riyadi, M.A., I. Saad and R. Ismail, 2010. Investigation of pillar thickness variation effect on Oblique Rotating Implantation (ORI)-based vertical double gate MOSFET. Microelectron. J., 41: 827-833.
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59. Divya, P. and I. Saad, 2010. Feasibility study of integrated vertical and lateral IMOS and TFET devices for nano-scale transistors. Proceedings of the IEEE International Conference on Semiconductor Electronics, June 28-30, 2010, Melaka, Malaysia, pp: 248-251.
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60. Zul Atfyi, F.M.N., N.A. Hamid, M.A. Riyadi, I. Saad and R. Ismail, 2009. Comparative numerical analysis of planar and vertical MOSFET incorporating dielectric pocket (DP-MOSFET) in nanoscale regime. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia -.
61. Tan, M.L.P., R. Vidhi, T. Saxena, I. Saad, N. Bt. Zainal, M. Riyadi and V.K. Arora, 2009. Nano-CMOS circuit design in the nonohmic domain. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia, pp: 78-81.
62. Tan, M.L., V.K. Arora, I. Saad, M.T. Ahmadi and R. Ismail, 2009. The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor. J. Applied Phys., Vol. 105. 10.1063/1.3091278.
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63. Saad, I., R.M.A. Lee, R. Ismail and V.K. Arora, 2009. Physics-based modelling of ballistic transport in nanoscale transistor. Proceedings of the 3rd Asia International Conference on Modelling and Simulation, May 25-29, 2009, Bali, Indonesia, pp: 729-734.
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64. Saad, I., R.M.A. Lee, F.M.N. Zul Atfyi, M.A. Riyadi and R. Ismail, 2009. Nanoscaling analysis of multiple gate vertical MOSFET with Oblique Rotating Implantation (ORI) method. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia -.
65. Saad, I., R.M.A. Lee, A.R. Munawar, M.T. Ahmadi and R. Ismail, 2009. Numerical analysis of vertical double gate MOSFETs (VDGM) With Dielectric Pocket (DP) effects on silicon pillar for nanoscale transistor. AIP Conf. Proc., 1136: 840-844.
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66. Saad, I., R.M.A. Lee, A.R. Munawar, M.T. Ahmadi and R. Ismail, 2009. Numerical analysis of Vertical Double Gate MOSFETs (VDGM) with Dielectric Pocket (DP) effects on silicon pillar for nanoscale transistor. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 840-844.
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67. Saad, I., R.M. Lee, M.A. Riyadi and R. Ismail, 2009. Design and simulation analysis of nanoscale vertical MOSFET technology. Proceedings of the IEEE Student Conference on Research and Development, November 16-18, 2009, UPM, Serdang, Malaysia, pp: 215-218.
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68. Saad, I., M.T. Ahmadi, M.A. Riyadi, R. Ismail and V.K. Arora, 2009. Numerical analysis of carrier statistics in low-dimensional nanostructure devices. Jurnal Teknologi, 50: 109-117.
    Direct Link  |  
69. Saad, I., M.T. Ahmadi, A.R. Munawar, R. Ismail and V.K. Arora, 2009. Ballistic saturation velocity of quasi-2D low-dimensional nanoscale Field Effect Transistor (FET). Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 302-306.
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70. Saad, I., M.T. Ahmadi, A.R. Munawar, R. Ismail and V.K. Arora, 2009. Ballistic saturation velocity of quasi‐2D low‐dimensional nanoscale Field Effect Transistor (FET). AIP Conf. Proc., 1136: 302-306.
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71. Saad, I., M.L.P. Tan, R. Ismail, V.K. Arora, 2009. Nano-physics of transient phenomenon in semiconducting devices and circuits. Jurnal Teknologi, 50: 119-125.
    Direct Link  |  
72. Saad, I., M.L.P. Tan, A.C.E. Lee, R. Ismail and V.K. Arora, 2009. Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectron. J., 40: 581-583.
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73. Saad, I., M.L. Tan, I.H. Hii, R. Ismail and V.K. Arora, 2009. Ballistic mobility and saturation velocity in low-dimensional nanostructures. Microelectron. J., 40: 540-542.
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74. Saad, I., A.R. Munawar, M.T. Ahmadi and R. Ismail, 2009. Design and analysis of nanoscale vertical MOSFET using Oblique Rotating Implantation (ORI) method with reduced parasitic capacitance. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 79-83.
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75. Riyadi, M.A., Z.A.F. Napiah, J.E. Suseno, I. Saad and R. Ismail, 2009. Body doping influence in vertical MOSFET design. Proceedings of the Innovative Technologies in Intelligent Systems and Industrial Applications, July 25-26, 2009, Monash, pp: 92-95.
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76. Riyadi, M.A., M.T. Ahmadi, J.E. Suseno, K.E. Siew, I. Saad, R. Ismail and V.K. Arora, 2009. Physics-based simulation of carrier velocity in 2-dimensional P-type MOSFET. Proceedings of the 3rd Asia International Conference on Modelling and Simulation, May 25-29, 2009, Bali, Indonesia, pp: 735-738.
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77. Riyadi, M.A., M.T. Ahmadi, I. Saad and R. Ismail, 2009. Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 89-92.
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78. Riyadi, M.A., J.E. Suseno, I. Saad and R. Ismail, 2009. Design of nanoscale vertical double gate PMOS with oblique rotating implantation method. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia -.
79. Riyadi, M.A., I. Saad, M.T. Ahmadi and R. Ismaila, 2009. Vertical double gate MOSFET For nanoscale device with fully depleted feature. AIP Conf. Proc., 1136: 248-252.
    CrossRef  |  
80. Riyadi, M.A., I. Saad, M.T. Ahmadi and R. Ismail, 2009. Vertical double gate MOSFET for nanoscale device with fully depleted feature. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 248-252.
    CrossRef  |  
81. Chek, D.C.Y., M.L.P. Tan, I. Saad, R.M.A. Lee and V.K. Arora, 2009. SPICE circuit modeling of single-walled carbon nanotube field-effect-transistor and performance comparison with metal oxide semiconductor field-effect-transistor. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia -.
82. Alias, N.E., M.A. Riyadi, I. Saad, J.E. Suseno and R. Ismail, 2009. Design and analysis of 50 nm vertical MOSFET incorporating dielectric pocket with contact width variations. Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics, August 10-12, 2009, Kota Bharu, Kelantan, Malaysia -.
83. Ahmadi, M.T., Y.W. Hong, I. Saad and R. Ismail, 2009. MOSFET-like carbon nanotube field effect transistor model. Proceedings of the NSTI Nanotechnology Conference, May 3-7, 2009, Houston, TX., USA., pp: 574-579.
    Direct Link  |  
84. Ahmadi, M.T., M.A. Riyadi, I. Saad and R. Ismail, 2009. Numerical study of fermi energy for P-type silicon nanowire. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 98-102.
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85. Ahmadi, M.T., M.A. Riyadi, I. Saad and R. Ismail, 2009. Numerical study of fermi energy for P‐type silicon nanowire. AIP Conf. Proc., 1136: 98-102.
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86. Ahmadi, M.T., I. Saad, M.A. Riyadi and R. Ismail, 2009. Analytical study of drift velocity in P-type silicon nanowires. Proceedings of the International Conference on Nanoscience and Nanotechnology, November 18-21, 2008, Shah Alam, Selandor, Malaysia, pp: 264-268.
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87. Ahmadi, M.T., I. Saad, M.A. Riyadi and R. Ismail, 2009. Analytical study of drift velocity in P‐type silicon nanowires. AIP Conf. Proc., 1136: 264-268.
    CrossRef  |  Direct Link  |  
88. Zul Atfyi Fauzan, M.N., I. Saad and R. Ismail, 2008. Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET). Solid State Sci. Technol., 16: 8-13.
    Direct Link  |  
89. Saad, I., R. Ismail and V.K. Arora, 2008. Investigation on the effects of Oblique Rotating Ion Implantation (ORI) method for nanoscale vertical double gate MOSFET. Solid State Sci. Technol. Lett., 15: 69-76.
90. Saad, I., M.T. Ahmadi, R. Ismail and V.K. Arora, 2008. High-field drift velocity limitation in quasi-2D nanostructures (1D quantum limit). Proceedings of the 2nd Conference on Nanostructures, March 11-14, 2008, Kish University, Kish Island, Iran -.
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91. Saad, I., M.T. Ahmadi, R. Ismail and V.K. Arora, 2008. Ballistic carrier transport in a quasi-two-dimensional nanoscale Field Effect Transistor (FET). Proceedings of the IEEE International Conference on Semiconductor Electronics, November 25-27, 2008, Johor Bahru, Malaysia, pp: 470-474.
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92. Saad, I., M.N. Zul Atfyi Fauzan, M.A. Riyadi and R. Ismail, 2008. Numerical analysis of Double Gate (DG) vertical MOSFETS incorporating Dielectric Pocket (DP) in nanoscale regime. Proceedings of the Regional Annual Fundamental Science Seminar, May 27-29, 2008, Ibnu Sina Institute for Fundamental Science Studies, Utm Skudai, Johor, Malaysia -.
93. Saad, I., M.L.P. Tan, I.H. Hii, R. Ismail and V.K. Arora, 2008. Ballistic mobility and saturation velocity in low-dimensional nanostructures. Proceedings of the Workshop on Recent Advances of Low Dimensional Structures and Devices, April 7-9, 2008, School of Physics and Astronomy, Nottingham University, UK -.
94. Saad, I., M.L.P. Tan, A.C.E. Lee, R. Ismail and V.K. Arora, 2008. Scattering-limited and ballistic transport in a nano-CMOS circuit. Proceedings of the Workshop on Recent Advances of Low Dimensional Structures and Devices, April 7-9, 2008, School of Physics and Astronomy, Nottingham University, UK -.
95. Saad, I., M.A. Riyadi, R. Ismail and V.K. Arora, 2008. Self-aligned Double-Gate (DG) vertical MOSFET's using Oblique Rotating Implantation (ORI) method with reduced parasitic capacitance. Proceedings of the IEEE International Conference on Semiconductor Electronics, November 25-27, 2008, Johor Bahru, Malaysia, pp: 604-608.
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96. Saad, I., I. Sulaiman and R. Ismail, 2008. Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime. Sains Malaysiana, 37: 239-243.
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97. Saad, I., A.R. Munawar, M.T. Ahmadi and R. Ismail, 2008. Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance. AIP Conf. Proc., 1136: 79-83.
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98. Saad, I. and R. Ismail, 2008. Self-aligned Vertical Double-Gate MOSFET (VDGM) with the Oblique Rotating ion Implantation (ORI) method. Microelectron. J., 39: 1538-1541.
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99. Saad, I. and R. Ismail, 2008. Self-aligned Double-Gate (DG) nanoscale vertical MOSFETS with reduced parasitic capacitance. Proceedings of the SPIE International Conference on Smart Materials, Nano- and Micro-Smart System, December 9-12, 2008, Melbourne, Australia -.
100. Riyadi, M.A., Z.A.F.M. Napiah, I. Saad and R. Ismail, 2008. Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket. Proceedings of the IEEE International Conference on Semiconductor Electronics, November 25-27, 2008, Johor Bahru, Malaysia, pp: 639-642.
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101. Riyadi, M.A., M.T. Ahmadi, I. Saad and R. Ismail, 2008. Analytical study of carrier statistic in 2‐dimensional nanoscale P‐MOS. AIP Conf. Proc., 1136: 89-92.
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102. Riyadi, M.A., I. Saad, M.N. Zul Atfyi Fauzan and R. Ismail, 2008. Analysis of vertical and lateral structures for nanoscale Field Effect Transistor (FET). Proceedings of the Regional Annual Fundamental Science Seminar, May 27-29, 2008, Ibnu Sina Institute for Fundamental Science Studies, Utm Skudai, Johor, Malaysia -.
103. Riyadi, M.A., I. Saad and R. Ismail, 2008. Silicon pillar thickness effect on Vertical Double Gate MOSFET (VDGM) with Oblique Rotating Implantation (ORI) method. Proceedings of the IEEE International Conference on Semiconductor Electronics, November 25-27, 2008, Johor Bahru, Malaysia, pp: 475-479.
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104. Riyadi, M.A., I. Saad and R. Ismail, 2008. Analysis of pillar thickness variation on Source-On-Top (SOT) nanoscale vertical MOSFET with Oblique Rotating Implantation (ORI) method. Proceedings of the Regional Conference on Solid State Science and Technology, November 30-December 2, 2008, Port Dickson, Negeri Sembilan, Malaysia -.
105. Ahmadi, M.T., M.A. Riyadi, R. Ismail, V.K. Arora and I. Saad, 2008. Analytical study of drift velocity in low dimensional devices. J. Fundam. Sci., 4: 403-413.
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106. Ahmadi, M.T., I. Saad, R. Ismail and V.K. Arora, 2008. The ultimate drift velocity in two dimensional quantum limit. Proceedings of the 2nd Asia International Conference on Modeling and Simulation, May 13-15, 2008, Kuala Lumpur, pp: 980-984.
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107. Ahmadi, M.T., I. Saad, R. Ismail and V.K. Arora, 2008. The ultimate drift velocity in degenerately-doped nanowires. Proceedings of the 2nd Conference on Nanostructures, March 11-14, 2008, Kish University, Kish Island, Iran -.
     Direct Link  |  
108. Ahmadi, M.T., I. Saad, R. Ismail and V.K. Arora, 2008. Numerical study of carrier statistic in nanostructure devices. Proceedings of the Regional Annual Fundamental Science Seminar, May 27-29, 2008, Ibnu Sina Institute for Fundamental Science Studies, Utm Skudai, Johor, Malaysia -.
109. Ahmadi, M.T., I. Saad, R. Ismail and V.K. Arora, 2008. Analytical study of drift velocity in low dimensional devices. Proceedings of the Regional Annual Fundamental Science Seminar, May 27-29, 2008, Ibnu Sina Institute for Fundamental Science Studies, Utm Skudai, Johor, Malaysia -.
110. Ahmadi, M.T., I. Saad, J. Karamdel, R. Ismail and V.K. Arora, 2008. Carrier velocity in carbon nano tube field effect transistor. Proceedings of the IEEE International Conference on Semiconductor Electronics, November 25-27, 2008, Johor Bahru, Malaysia, pp: 519-523.
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111. Zul Atfyi Fauzan, M.N., I. Saad and R. Ismail, 2007. Scaling and numerical simulation analysis of 50 NMOSFET incorporating dielectric pocket (DP-MOSFET). Proceedings of the 23rd Regional Conference of Solid State Science and Technology, November 27-29, 2007, Johor Bahru, Malaysia -.
112. Zul Atfyi Fauzan, M.N., I. Saad and R. Ismail, 2007. Process and characterization of MOSFET incorporating dielectric pocket (DP-MOSFET) using TCAD tools. Proceedings of the Regional Symposium on Microelectronics, December 3-6, 2007, Penang, Malaysia -.
113. Zul Atfyi Fauzan, M.N., I. Saad and R. Ismail, 2007. Characterization of 50 nm MOSFET with dielectric pocket. Jurnal Fizik Malaysia, 28: 93-98.
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114. Tan, M.L., I. Saad, R. Ismail and V.K. Arora, 2007. Enhancement of nano-RC switching delay due to the resistance blow-up in InGaAs. Nano, 2: 233-237.
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115. Saad, I., R. Ismail and V.K. Arora, 2007. Investigation on the effects of Oblique Rotating ion Implantation (ORI) for nanoscale vertical MOSFET. Proceedings of the 23rd Regional Conference of Solid State Science and Technology, November 27-29, 2007, Johor Bahru, Malaysia -.
116. Saad, I., M.T. Ahmadi, M.L.P. Tan, R. Ismail and V.K. Arora, 2007. The ultimate drift velocity in degenerately-doped silicon. Proceedings of the Regional Symposium on Microelectronics, December 3-6, 2007, Penang, Malaysia -.
117. Saad, I., M.L.P. Tan, R. Ismail and V.K. Arora, 2007. Nano-physics of transient phenomenon in semiconducting devices and circuits. Proceedings of the 23rd Regional Conference of Solid State Science and Technology, November 27-29, 2007, Johor Bahru, Malaysia -.
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118. Saad, I., I.H. Hii, A.C.E. Lee, H.H. Lau, R. Ismail and V.K. Arora, 2007. The circuit design beyond ohms law: Applications to series, parallel and CMOS configurations. Proceedings of the Regional Symposium on Microelectronics, December 3-6, 2007, Penang, Malaysia -.
119. Saad, I., I. Sulaiman and R. Ismail, 2007. Scaling of vertical and lateral NMOSFET in nanometer regime. Proceedings of the ISESCO International Workshop and Conference on Nanotechnology, June 12-15, 2007, Kuala Lumpur, Malaysia -.
120. Saad, I. and R. Ismail, 2007. Simulation analysis on the impact of Oblique Rotating ion Implantation (ORI) in fabricating novel structure of vertical NMOSFET. Proceedings of the Regional Symposium on Microelectronics, December 3-6, 2007, Penang, Malaysia -.
121. Saad, I. and R. Ismail, 2007. Process and characterization of 50 nm Vertical Double Gate MOSFET (VDGM) with filox using TCAD tools. Jurnal Fizik Malaysia, 28: 71-76.
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122. Saad, I. and R. Ismail, 2007. Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate NMOSFET. Proceedings of the International Conference on Advancement of Materials and Nanotechnology, May 29-June 1, 2007, Langkawi, Kedah, pp: 212-216.
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123. Fauzan, M.N.Z.A., I. Saad and R. Ismail, 2007. Numerical simulation characterization of 50 nm MOSFET incorporating dielectric pocket (DP‐MOSFET). Proceedings of the International Conference on Advancement of Materials and Nanotechnology, May 29-June 1, 2007, Langkawi, Kedah, Malaysia, pp: 554-558.
124. Arora, V.K., M.L.P. Tan, I. Saad and R. Ismail, 2007. Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor. Applied Phys. Lett., Vol. 91. 10.1063/1.2780058.
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125. Wong, Y.J., I. Saad and R. Ismail, 2006. Characterization of strained silicon MOSFET using semiconductor TCAD tools. Proceedings of the IEEE International Conference on Semiconductor Electronics, 29 October-December 1, 2006, Kuala Lumpur, Malaysia, pp: 924-927.
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126. Saad, I. and R. Ismail, 2006. Design and simulation of a high performance lateral BJTs on TFSOI. Proceedings of the IEEE International Conference on Semiconductor Electronics, October 29-December 1, 2006, Kuala Lumpur, Malaysia, pp: 554-557.
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127. Saad, I. and R. Ismail, 2006. Design and simulation of 50 nm Vertical Double-Gate MOSFET (VDGM). Proceedings of the IEEE International Conference on Semiconductor Electronics, October 29-December 1, 2006, Kuala Lumpur, Malaysia, pp: 549-553.
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128. Saad, I., A.R. Abu Bakar and P. Vaya, 2005. Effect of register insertion on speed performance of microprocessor datapath unit design. Proceedings of the International Conference on Robotics, Vision, Information and Signal Processing, July 20-22, 2005, Penang, Malaysia -.
129. Saad, I., A.R. Abu Bakar and P. Vaya, 2005. Automating the RISC microprocessor design through ASIC methodology. Proceedings of the International Conference on Robotics, Vision, Information and Signal Processing, July 20-22, 2005, Penang, Malaysia -.
130. Saad, I. and N. Bolong, 2005. Exploration on the influence of translation in teaching and learning process in engineering subject. Proceedings of the 10th International Conference on Translation, August 2-4, 2005, Kota Kinabalu, Sabah, Malaysia -.
131. Saad, I., P. Vaya and A.R. Abu Bakar, 2004. HDL-based design methodology of 16-bit RISC microprocessor. Proceedings of the 3rd International Conference on Advanced Manufacturing Technology, May 11-13, 2004, Kuala Lumpur, Malaysia -.
132. Saad, I., P. Vaya and P. Ashburn, 2003. Simulation of a novel lateral bipolar transistor with an approximately 21 Ghz f_Tmax on thin film SOI. Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices, December 16-20, 2003, Indian Institute of Technology Madras, Chennai, India -.
133. Saad, I. and P. Ashburn, 2002. Simulation of a high performance lateral BJT on TFSOI. Proceedings of the 19th Regional Conference on Solid State Science Technology, October 30-November 1, 2002, Kuching, Sarawak, Malaysia -.
134. Saad, I. and N. Bolong, 2002. Expert system for renewable energy: conceptual and methodologies approach. Proceedings of the International Conference on Artificial Intelligence in Engineering and Technology, June 17-18, 2002, Kota Kinabalu, Sabah, Malaysia -.