1. Soylu, M., M. Cavas, A.A. Al-Ghamdi, Z.H. Gafer, F. El-Tantawy and F. Yakuphanoglu, 2014. Photoelectrical characterization of a new generation diode having GaFeO₃ interlayer. Solar Energy Mater. Solar Cells, 124: 180-185.
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2. Soylu, M., A.A. Al-Ghamdi, S.B. Omran and F. Yakuphanoglu, 2014. Rectifying structure with high voltage operation based on CuBO₂ as an UV photocatalyst. J. Alloys Compd., 617: 602-608.
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3. Tascioglu, I., M. Soylu, S. Altindal, A.A. Al-Ghamdi and F. Yakuphanoglu, 2012. Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode. J. Alloys Compounds, 541: 462-467.
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4. Soylu, M., M. Girtan and F. Yakuphanoglu, 2012. Properties of PEDOT: PEG/ZnO/p-Si heterojunction diode. Mater. Sci. Eng.: B, 177: 785-790.
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5. Soylu, M., M. Cavas, A.A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantawy and F. Yakuphanoglu, 2012. The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode. J. Optoelectron. Adv. Mater., 14: 61-66.
6. Soylu, M., F. Yakuphanoglu and I.S. Yahia, 2012. Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure. Microelectron. Reliab., 52: 1355-1361.
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7. Soylu, M., A.A. Al-Ghamdi and F. Yakuphanoglu, 2012. Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation. Microelectron. Eng., 99: 50-57.
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8. Soylu, M., 2012. Fabrication and characterization of transparent MEH-PPV/n-GaN (0001) heterojunction devices. Opt. Mater., 34: 878-883.
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9. Soylu, M. and F. Yakuphanoglu, 2012. Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer. Superlattices Microstruct., 52: 470-483.
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10. Safak, Y., M. Soylu, F. Yakuphanoglu and S. Altindal, 2012. On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode. J. Applied Phys., Vol. 111. 10.1063/1.3681371.
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