1. Altuntas, H. and T. Bayrak, 2017. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition. Electron. Mater. Lett., 13: 114-119.
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2. Altuntas, H., T. Bayrak, S. Kizir, A. Haider and N. Biyikli, 2016. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition. Semiconductor Sci. Technol., Vol. 31. .
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3. Bas, Y., M. Tamer, M.K. Ozturk, A. Gultekin, H. Altuntas, S. Ozcelik and E. Ozbay, 2015. Defect research of InGaN based blue LED structures using reciprocal space mapping. Gazi Univ. J. Sci., 28: 365-375.
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4. Altuntas, H., C. Ozgit-Akgun, I. Donmez and N. Biyikli, 2015. Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition. IEEE Trans. Electron Devices, 62: 3627-3632.
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5. Altuntas, H., C. Ozgit-Akgun, I. Donmez and N. Biyikli, 2015. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films. J. Applied Phys., Vol. 117. 10.1063/1.4917567.
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6. Altuntas, H., I. Donmez, C. Ozgit-Akgun and N. Biyikli, 2014. Electrical characteristics of β-Ga₂O₃ thin films grown by PEALD. J. Alloys Compounds, 593: 190-195.
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7. Altuntas, H., I. Donmez, C. Ozgit-Akgun and N. Biyikli, 2014. Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, Vol. 32. 10.1116/1.4875935.
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8. Altuntas, H. and S. Ozcelik, 2013. The interface states and series resistance analyzing of Au/SiO₂/n-GaAs at high temperatures. J. Alloys Compounds, 577: 143-147.
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9. Altuntas, H. and S. Ozcelik, 2013. The analysis of leakage current in MIS Au/SiO₂/n-GaAs at room temperature. Semiconductors, 47: 1308-1311.
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10. Gokcen, M., H. Altuntas, S. Altındal and S. Ozcelik, 2012. Frequency and voltage dependence of negative capacitance in Au/SiO₂/n-GaAs structures. Mater. Sci. Semiconductor Process., 15: 41-46.
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11. Ozturk, M.K., H. Altuntas, S. Corekci, Y. Hongbo, S. Ozcelik and E. Ozbay, 2011. Strain-stress analysis of AlGaN/GaN heterostructures with and without an AlN buffer and interlayer. Strain, 47: 19-27.
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12. Altuntas, H., S. Altindal, S. Corekci, M.K. Ozturk and S. Ozcelik, 2011. Electrical characteristics of Au/n-GaAs structures with thin and thick SiO₂ dielectric layer. Semiconductors, 45: 1286-1290.
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13. Kars, I., S.S. Cetin, B. Kınaci, B. Sarıkavak and A. Bengi et al., 2010. Influence of thermal annealing on the structure and optical properties of dc magnetron sputtered titanium dioxide thin films. Surface Interface Analysis, 42: 1247-1251.
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14. Altuntas, H., A. Bengi, T. Asar, U. Aydemir and B. Sarıkavak et al., 2010. Interface state density analyzing of Au/TiO₂ (rutile)/n-Si Schottky barrier diode. Surface Interface Analysis, 42: 1257-1260.
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15. Yildiz, A., S.B. Lisesivdin, H. Altuntas, M. Kasap and S. Ozcelik, 2009. Electrical conduction properties of Si δ-doped GaAs grown by MBE. Physica B: Condensed Matter, 404: 4202-4206.
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16. Lisesivdin, S.B., H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay and S. Ozcelik, 2009. DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content. Superlattices Microstructures, 45: 604-611.
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17. Gokcen, M. and H. Altuntas, 2009. On the profile of temperature dependent electrical and dielectric properties of Au/SiO₂/n-GaAs (MOS) structures at various frequencies. Phys. B: Condensed Matter, 404: 4221-4224.
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18. Altuntas, H., S. Altındal, S. Ozcelik and H. Shtrikman, 2009. Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO₂ insulator layer at room temperature. Vacuum, 83: 1060-1065.
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19. Altuntas, H., S. Altındal, H. Shtrikman and S. Ozcelik, 2009. A detailed study of current-voltage characteristics in Au/SiO 2/n-GaAs in wide temperature range. Microelectronics Reliability, 49: 904-911.
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20. Altuntas, H., M. Gokcen and S. Ozcelik, 2009. Analysis of current-voltage characteristics in Au/n-GaAs Schottky barrier diodes in wide temperature range. J. Optoelectronics Adv. Mater. Symposia, 1: 222-225.
21. Altuntas, H., A. Bengi, U. Aydemir, T. Asar and S.S. Cetin et al., 2009. Electrical characterization of current conduction in Au/TiO₂/n-Si at wide temperature range. Mater. Sci. Semiconductor Process., 12: 224-232.
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22. Altuntas, H. and M. Gokcen, 2009. On the anomalous peak in the forward bias C-V curves of in Au/SiO₂/n-GaAs structures. J. Optoelectronics Adv. Mater. Symposia, 1: 226-229.
23. Sarikavak, B., M.K. Ozturk, H. Altuntas, T.S. Mammedov, S. Altindal and S. Ozcelik, 2008. MBE-growth and characterization of In xGa1-xAs/GaAs (x= 0.15) superlattice. Revista Mexicana de Fisica, 54: 416-421.
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24. Gokcen, M., H. Altuntas and S. Altindal, 2008. Temperature dependence of electrical characteristics of Au/SiO₂/n-GaAS (MOS) structures. Optoelectronics Adv. Mater. Rapid Commun., 2: 838-841.
25. Gokcen, M., H. Altuntas and S. Altindal, 2008. Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness. Optoelect. Adv. Mater. Rapid Commun., 2: 833-837.
26. Tutuncu, H.M., H. Altuntas, G.P. Srivastava and G. Ugur, 2004. First‐principles study of electronic and dynamical properties of AuAl2. Physica Status Solidi, 1: 3027-3030.
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