1. Shahzad, M.A., M. Shahid, I. Bibi, M.A. Khan and M.A. Nawaz et al., 2017. The effect of rare earth Dy₃₊ ions on structural, dielectric and electrical behavior of new nanocrystalline PbZrO₃ perovskites. Ceramics Int., 43: 1073-1079.
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2. Bashir, B., W. Shaheen, M. Asghar, M.F. Warsi and M.A. Khan et al., 2017. Copper doped manganese ferrites nanoparticles anchored on graphene nano-sheets for high performance energy storage applications. J. Alloys Compounds, 695: 881-887.
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3. Shahid, M.Y., M. Asghar, H.M. Arbi, M. Zafar and S.Z. Ilyas, 2016. Role of magnesium in ZnS structure: Experimental and theoretical investigation. AIP Adv., Vol. 6. 10.1063/1.4942512.
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4. Shaheen, W., M.F. Warsi, M. Shahid, M.A. Khan and M. Asghar et al., 2016. Carbon coated MoO3 nanowires/graphene oxide ternary nanocomposite for high-performance supercapacitors. Electrochim. Acta, 219: 330-338.
5. Nawaz, M.A., M. Asghar, M.Y. Shahid, N. Ul Ain, F. Iqbal, F. Malik and H.E. Ruda, 2016. Microstructural study of as grown and 650 °C annealed ZnO nanorods: X-ray peak profile analysis. Digest J. Nanomaterials Biostructures, 11: 537-546.
6. Mahmood, K., M.I. Arshad, A. Alia, M.A. Nabi, N. Amin, M. Anwar and M. Asghar, 2016. Synthesis of p-type ZnO from the high temperature thermal treatment of bulk zinc phosphate. J. Ovonic Res., 12: 225-229.
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7. Eriksson, M.O., S. Schmidt, M. Asghar, P.C. Lin, P.O. Holtz, M. Syvajarvi and G.R. Yazdi, 2016. Tuning the emission energy of chemically doped graphene quantum dots. Nanomaterials, 6: 198-209.
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8. Asghar, M., M.Y. Shahid, F. Iqbal, K. Fatima, M.A. Nawaz, H.M. Arbi and R. Tsu, 2016. Simple method for the growth of 4H silicon carbide on silicon substrate. AIP Adv., Vol. 6. 10.1063/1.4943399.
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9. Shahzad, M.A., M.F. Warsi, M.A. Khan, F. Iqbal and M. Asghar, 2015. New nd-doped lead zirconate Pb 1 - 1.5 x Nd x ZrO 3 nanocrystals: fabrication via wet chemical route for electrical and dielectric parameters evaluation. J. Alloys Compd., 647: 693-698.
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10. Rafiq, M.A., M.A. Khan, M. Asghar, S.Z. Ilyas, I. Shakir, M. Shahid and M.F. Warsi, 2015. Influence of Co 2+ on structural and electromagnetic properties of Mg-Zn nanocrystals synthesized via co-precipitation route. Ceram. Int., 41: 10501-10505.
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11. Malik, F., M. Asghar, K. Mahmood, M.A. Nawaz, M.Y.A. Raja and R. Tsu, 2015. Characterization of phosphorus-doped zinc oxide. J. Ovonic Res., .
12. Mahmood, K., M. Asghar, N. Amin and A. Ali, 2015. Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing. J. Semicond., .
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13. Mahmood, K., M. Asghar, A. Ali, M. Ajaz Un Nabi, M.I. Arshad, N. Amin and M.A. Hasan, 2015. Enhancement of thermoelectric properties of MBE grown un-doped ZnO by thermal annealing. Adv. Energy Res., 3: 117-124.
14. Hassan, A., M.A. Khan, M. Shahid, M. Asghar and I. Shakir et al., 2015. Nanocrystalline Zn 1- x Co 0.5 x Ni 0.5 x Fe 2 O 4 ferrites: fabrication via co-precipitation route with enhanced magnetic and electrical properties. J. Magn. Magn. Mater., 393: 56-61.
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15. Asghar, M., K. Mahmood, B.M. Samaa, S.R. Ejaz and N.U. Ain, 2015. Effect of annealing temperature on the structural and optical properties of un-doped bulk ZnO. Mater. Today Proc., 2: 5572-5577.
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16. Asghar, M., K. Mahmood, B.M. Samaa, S. Rabia and M.Y. Shahid, 2015. Effect of annealing temperature on the structural and optical properties of zns thin films. Mater. Today Proc., 2: 5430-5435.
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17. Asghar, M., K. Mahmood, A. Nawaz, B.M. Samaa, S.R. Ejaz and Y.H. Xie, 2015. Enhancement of P diffusion density in bulk ZnO for p-type conductivity. Mater. Today Proc., 2: 5230-5235.
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18. Asghar, M., K. Fatima, N.U. Ain, R. Tsu and K. Mahmood, 2015. Analysis of HRTEM images of SiC/Si (111) grown by MBE technique. Mater. Today Proc., 2: 5808-5814.
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19. Arshad, M., A. Ali, M. Asghar, M. Ajaz un Nabi, N. Amin and K. Mahmood, 2015. Investigation of double gaussian distribution model of Au/free standing GaN schottky contact grown by HVPE. J. Ovonic Res., 11: 137-144.
20. Ajaz-Un-Nabi, M., K. Mahmood, M.I. Arshad, A. Alia and N. Amin et al., 2015. Investigation of current transport properties of ni schottky diodes fabricated on MBE grown GaN on silicon substrate. J. Ovonic Res., 12: 27-34.
21. Malik, H., A. Mahmood, K. Mahmood, M.Y. Lodhi and M.F. Warsi et al., 2014. Influence of cobalt substitution on the magnetic properties of zinc nanocrystals synthesized via micro-emulsion route. Ceramics Int., 40: 9439-9444.
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22. Lodhi, M.Y., K. Mahmood, A. Mahmood, H. Malik and M.F. Warsi et al, 2014. New Mg 0.5 Co x Zn 0.5 - x Fe 2 O 4 nano-ferrites: structural elucidation and electromagnetic behavior evaluation. Curr. Appl. Phys., 14: 716-720.
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23. Khan, M.A., M. Sabir, A. Mahmood, M. Asghar and K. Mahmood et al., 2014. High frequency dielectric response and magnetic studies of Zn_{1- x}Tb_xFe₂O₄ nanocrystalline ferrites synthesized via micro-emulsion technique. J. Magnetism Magnetic Mater., 360: 188-192.
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24. Asghar, M., K. Mahmood, S. Rabia, B.M. Samaa, M.Y. Shahid and M.A. Hasan, 2014. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes. IOP Conf. Ser: Ser. Mater. Sci. Eng., .
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25. Asghar, M., K. Mahmood, R. Tsu, M.A. Hasan and I. Ferguson, 2014. Characterization of deep acceptor level in bulk ZnO grown by molecular beam epitaxy. Chin Phys. B, .
26. Asghar, M., K. Mahmood, N. ul Ain, W. Stiputra and R. Tsu, 2014. Characterization of MBE grown diamond structure on Ti/sapphire. IOP Conf. Ser. Mater. Sci. Eng., .
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27. Asghar, M., K. Mahmood, M.A. Hasan, R. Tsu and I.T. Ferguson, 2014. Experimental evidence of VO - Zni complex to be intrinsic donor in bulk ZnO. AIP Conf. Proc., 1583: 355-358.
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28. Asghar, M., K. Mahmood, F. Malik, B.M. Samaa, S. Rabia and M.A. Hasan, 2014. Effect of Zn/O ratio on the structural, optical and electrical properties of MBE grown ZnO. IOP Conf. Ser. Mate. Sci. Eng., .
29. Asghar, M., K. Mahmood, A. Nawaz and R. Tsu, 2014. Growth and characterization of epilayers of SiC on Si (111) by molecular beam epitaxy. IOP Conf. Ser: Ser. Mater. Sci. Eng., .
30. Anwar, Z., M.A. Khan, I. Ali, M. Asghar and M. Sher et al., 2014. Investigation of dielectric behavior of new Tb3+ doped BiFeO3 nanocrystals synthesized via micro-emuslion route. J. Ovonic Res., 10: 265-273.
31. Anwar, Z., M.A. Khan, A. Mahmood, M. Asghar and I. Shakir et al., 2014. Tb x Bi 1- x FeO 3 nanoparticulate multiferroics fabricated by micro-emulsion technique: Structural elucidation and magnetic behavior evaluation. J. Magn. Magn. Mater., 355: 169-172.
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32. Ajaz-un-Nabi, M., A. Ashfaq, M.I. Arshad, A. Ali, K. Mahmood, M.A. Hasan and M. Asghar, 2014. Ellipsometric study of GaN/AlN/Si (111) heterostructures grown by molecular beam epitaxy. IOP Conf. Ser. Mater. Sci. Eng., .
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33. Faisal, M., M. Asghar, K. Mahmood, M. Willander, O. Nur and P. Klason, 2013. Current-voltage and capacitance-voltage characteristics of pd schottky diodes fabricated on ZnO grown along Zn-and O-faces. Appl. Mech. Mater., 313: 270-274.
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34. Asghar, M., K. Mahmood, M.Y. Raja and M.A. Hasan, 2013. Synthesis and characterization of zno nanorods using molecular beam epitaxy. Adv. Mater. Res., 622: 919-924.
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35. Asghar, M., K. Mahmood, M. Faisal and M.A. Hasan, 2013. Electrical characterization of Au/ZnO/Si schottky contact. J. Phys. Conf. Ser., .
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36. Asghar, M., K. Mahmood, I.T. Ferguson, M. Yasin A. Raja, Y.H. Xie, R. Tsu and M.A. Hasan, 2013. Investigation of VO-Zni intrinsic donors of ZnO under hot environment of oxygen and zinc. J. Semicond. Sci. Technol., .
37. Asghar, M., K. Mahmood, F. Malik and M.A. Hasan, 2013. Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy. J. Phys. Conf. Ser., .
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38. Ashfaq, M., R. Tabassum, M.M. Ahmed, K. Mehmood, M. Asghar and T. Hussain, 2012. Improved method for preparation of anhydrous silica by microwave irradiation with spectroscopic characterization and toxicity assay. J. Non-Cryst. Solids, 358: 847-853.
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39. Asghar, M., K. Mahmood, A. Ali and M.A. Hasan, 2012. Comparative study of temperature dependent barrier heights of Pd/ZnO schottky diodes grown along Zn-and O-Faces. Key Eng. Mater., 510: 265-270.
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40. Asghar, M., K. Mahmood and M.A. Hasan, 2012. Investigation of source of N-type conductivity in bulk ZnO. Key Eng. Mater., 510: 227-232.
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41. Asghar, M., K. Mahmood and M.A. Hasan, 2012. Effect of substrate temperature on the structural and electrical properties of MBE grown ZnO. Key Eng. Mater., 510: 132-136.
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42. Asghar, M., F. Iqbal, S.M. Faraz, V. Jokubavicius, Q. Wahab and M. Syvajarvi, 2012. Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method. Phys. B Condens. Matter, 407: 3038-3040.
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43. Asghar, M., F. Iqbal, S. Faraz, V. Jokubavicius, Q. Wahab and M. Syvajarvi, 2012. Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy. Phys. B Condens. Matter, 407: 3041-3043.
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44. Asghar, M., E. Hurwitz, A. Melton, M. Jamil, I.T. Ferguson and R. Tsu, 2012. Investigation of electron energy states in the InGaN/GaN multiple quantum wells. Phys. B, 407: 2850-2853.
45. Hurwitz, E.N., M. Asghar, A. Melton, B. Kucukgok and L. Su et al., 2011. Thermopower study of GaN-based materials for next-generation thermoelectric devices and applications. J. electron. Mater., 40: 513-517.
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46. Hashmi, M.A., K. Mahmood, A. Ali, M. Hasan, M. Raja, I. Hussain and M. Willander, 2011. Role of Zn-interstitial defect in the ultraviolet emission from ZnO. ECS Trans., 35: 149-154.
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47. Asghar, M., K. Mahmood, A. Ali, M.A. Hasan, I. Hussain and M. Willander, 2011. Origin of ultraviolet luminescence from bulk ZnO thin films grown by molecular beam epitaxy. Adv. Eng. Forum, 1: 135-139.
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48. Asghar, H.M., M. Asghar and M.S. Awan, 2011. Solid state synthesis and characterization of spintronics material Cd0. 55 Hg0. 45 Te. Appl. Mech. Mater., 44: 2299-2306.
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49. Ali, A., T. Gouveas, M.A. Hasan, S.H. Zaidi and M. Asghar, 2011. Influence of deep level defects on the performance of crystalline silicon solar cells: experimental and simulation study. Solar Energy Mater. Solar Cells, 95: 2805-2810.
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50. Ajaz Un Nabi, M., M.I. Arshad, A. Ali, M. Asghar and M.A. Hasan, 2011. Study of substrate induced deep level defects in bulk GaN layers grown by molecular beam epitaxy using deep level transient spectroscopy. Adv. Mater. Res., 295: 777-780.
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51. Noor, H., P. Klason, S.M. Faraz, O. Nur, Q. Wahab, M. Willander and M. Asghar, 2010. Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide schottky devices. J. Appl. Phys., 107: 103717-103717.
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52. Iqbal, F., A. Ali, A. Mehmood, M. Yasin and A. Raja et al., 2010. New trends in wide bandgap semiconductors: synthesis of single crystalline silicon carbide layers by low pressure chemical vapor deposition technique on P-type silicon (100 and/or 111) and their characterization. Key Eng. Mater., 442: 195-201.
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53. Faraz, S.M., H. Ashraf, M.I. Arshad, P.R. Hageman, M. Asghar and Q. Wahab, 2010. Interface state density of free-standing GaN Schottky diodes. Semicond. Sci. Technol., .
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54. Ashraf, H., M.I. Arshad, S.M. Faraz, Q. Wahab, P.R. Hageman and M. Asghar, 2010. Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy. J. Appl. Phys., .
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55. Noor, H., P. Klason, O. Nur, Q. Wahab, M. Asghar and M. Willander, 2009. Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique. J. Applied Phys., Vol. 105. 10.1063/1.3149800.
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56. Noor, H., P. Klason, O. Nur, Q. Wahab, M. Asghar and M. Willander, 2009. Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique. J. Appl. Phys., 105: 123510-123510.
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57. Faraz, S., H. Noor, M. Asghar, M. Willander and Q.U. Wahab, 2009. Modeling and simulations of Pd/n-ZnO schottky diode and its comparison with measurements. Adv. Mater. Res., 79: 1317-1320.
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58. Asghar, M., P. Shoghi, H. Noor and M.A. Hasan, 2009. Growth and characterization of single crystalline cubic SiC on porous Si using low pressure chemical vapor deposition technique. Microelectron. micro nano electron. Photonics, 2009: 59-63.
59. Asghar, M., H. Noor, M.S. Awan, S. Naseem and M.A. Hasan, 2008. Post-annealing modification in structural properties of ZnO thin films on p-type Si substrate deposited by evaporation. Mater. Sci. Semicond. Process., 11: 30-35.
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60. Asghar, M., I. Hussain, H.S. Noor, F. Iqbal, Q. Wahab and A.S. Bhatti, 2007. Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. J. appl. Phys., .
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61. Rafique, U., M. Mazhar, M. Asghar, M. Bhatti, S. Ali and F.A. Khwaja, 2006. Mechanism of conduction in poly 2 vinylpyridine. J. Chem. Soc. Pak., 28: 27-30.
62. Asghar, M., P. Muret, I. Hussain, B. Beaumont, P. Gibart and M. Shahid, 2006. Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy. Mater. Sci. Eng. B, 130: 173-176.
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63. Asghar, M., I. Hussain, M. Shahid, E. Bustarret, J. Cibert, S. Kuroda, S. Mareet and H. Mariette, 2006. Influence of high nitrogen flux in crystal quality of plasma-assisted MBE grown GaN layers using raman spectroscopy. Int. J. Mater. Sci., 1: 103-110.
64. Asghar, M., I. Hussain, M. Shahid, E. Bustarret, J. Cibert, S. Kuroda, H. Maiterette and S. Macet, 2006. Influence of high nitrogen flux on crystal quality of plasma-assisted MBE grown GaN layer using raman spectroscopy. Int. J. Mater. Sci., 1: 103-107.
65. Asghar, M., I. Hussain, F. Saleemi, E. Bustarret and J. Cibert et al., 2006. Properties of Ga 1- x Mn x N epilayers grown by plasma-assisted molecular beam epitaxy using raman spectroscopy. Mater. Sci. Eng. B, 133: 102-107.
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66. Asghar, M., I. Hussain, E. Bustarret, J. Cibert, S. Kuroda, S. Marcet and H. Mariette, 2006. Study of lattice properties of Ga 1- x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy by means of optical techniques. J. cryst. growth, 296: 174-178.
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67. Asghar, M., P. Muret, B. Beaumont and P. Gibart, 2004. Field dependent transformation of electron traps in GaN p-n diodes grown by metal-organic chemical vapour deposition. Mater. Sci. Eng. B, 113: 248-252.
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68. Asghar, M., P. Muret, B. Beaumont and P. Gibart, 2003. Characterization of GaN pn diodes using deep level transient Fourier spectroscopy. Microsc. Semiconducting Mater., 180: 345-349.
69. Asghar, M., P. Krispin, A. Knauer and H. Kostial, 2002. Study of electrical properties of isotypeGaAs/(In,Ga)P/GaAsheterointerfaces grown by MOVPE by capacitance-voltage and DLTFS techniques. J. Res. Sci., 13: 1-6.
70. Asghar, M., P. Krispon, H. Kostial and R. Hey, 2001. Detection of a ga-antisite deep level defect near the surface of MBE grown highly Be-doped gas laser. J. Nat. Sci. Math., 41: 165-173.
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71. Asghar, M., P. Krispin, M.H. Shaheen and M.S. Naveed, 2001. Study of interface states in the metal-semiconductor junction of Be-doped GaAs grown by molecular beam epitaxy by DLTFS. J. Res. Sci., 11: 18-22.
72. Asghar, M. and P. Krispin, 2001. Identification of the interfacial states at the MBE grown Si-doped GaAs/GaAs(H) structure using capacitance spectroscopy. J. Pure Appl. Sci., 20: 35-42.
73. Asghar, M. and P. Krispin, 2001. DLTFS study of antisite defects near surface of highly doped p-GaAs layers grown molecular beam epitaxy. J. Pure Appl. Sci., 20: 107-111.
74. Krispin, P., M. Asghar, A. Knauer and H. Kostial, 2000. Interface properties of isotype GaAs/(In, Ga) P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs. J. cryst. growth, 220: 220-225.
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