Dr. Anil Gulabrao Khairnar

Assistant Professor
M.V.P. Samaj`s K.T.H.M. College, India

Highest Degree
Ph.D. in Electronics from North Maharashtra University, India

My URL
https://livedna.org/91.17344

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Area of Interest:

Physical Science Engineering
Semiconductor Devices
Solid State Physics
Characterization
Electronics

Selected Publications

  1. Patil, V.S., K.S. Agrawal, A.G. Khairnar, B.J. Thibeault and A.M. Mahajan, 2017. Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface. Mater. Res. Bull., 87: 208-213.
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  2. Khairnar, A.G., V.S. Patil, K.S. Agrawal, R.S. Salunke and A.M. Mahajan, 2017. PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor. Semiconductors, 51: 131-133.
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  3. Agrawal, K.S., V.S. Patil, A.G. Khairnar and A.M. Mahajan, 2017. Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide-semiconductor capacitors. J. Mater. Sci.: Mater. Electron., 28: 12503-12508.
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  4. Patil, V.S., K.S. Agrawal, A.G. Khairnar, B.J. Thibeault and A.M. Mahajan, 2016. Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD. Mater. Sci. Semiconductor Process., 56: 277-281.
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  5. Mhaisagar, Y.S., A.S. Gaikwad, A.G. Khairnar and A.M. Mahajan, 2016. Enhancement in mechanical properties of silica low-k thin films using wet chemical techniques. Indian J. Pure Applied Phys., 54: 439-442.

  6. Mahajan, A.M., A.G. Khairnar and B.J. Thibeault, 2016. High dielectric constant ZrO2 films by atomic layer deposition technique on germanium substrates. Silicon, 8: 345-350.
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  7. Khairnar, A.G., V.S. Patil, K.S. Agrawal, R.S. Salunke, Y.S. Mhaisagar and A.M. Mahajan, 2016. Physical characterization of hafnium oxide for CMOS technology. SPEED J. Res. Electron., 1: 10-12.

  8. Agrawal, K.S., V.S. Patil, A.G. Khairnar and A.M. Mahajan, 2016. HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment. Applied Surf. Sci., 364: 747-751.
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  9. Khairnar, A.G., L.S. Patil, R.S. Salunke and A.M. Mahajan, 2015. Electrical properties of HfO2 high-k thin-film MOS capacitors for advanced CMOS technology. Indian J. Phys., 89: 1177-1181.
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  10. Mahajan, A.M., A.G. Khairnar and B.J. Thibeault, 2014. Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon. Semiconductors, 48: 497-500.

  11. Khairnar, A.G., K.S. Agrawal, V.S. Patil and A.M. Mahajan, 2014. Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate. In: Physics of Semiconductor Devices, Jain, V.K. and A. Verma (Eds.). Springer International Publishing, Switzerland, ISBN: 978-3-319-03001-2, pp: 25-27.

  12. Khairnar, A.G. V.S. Patil and A.M. Mahajan, 2014. Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium. In: Physics of Semiconductor Devices, Jain, V.K. and A. Verma (Eds.). Springer International Publishing, Switzerland, ISBN: 978-3-319-03001-2, pp: 9-11.

  13. Khairnar, A.G., Y.S. Mhaisagar and A.M. Mahajan, 2013. Synthesis of cerium dioxide high-k thin films as a gate dielectric in MOS capacitor. J. Nano-Electron. Phys., Vol. 5. .
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  14. Khairnar, A.G., Y.S. Mhaisagar and A.M. Mahajan, 2013. Surface passivation of germanium using NH3 ambient in RTP for high mobility MOS structure. J. Nano-Electron. Phys., Vol. 5. .
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  15. Khairnar, A.G. and A.M. Mahajan, 2013. Sol-gel deposited ceria thin films as gate dielectric for CMOS technology. Bull. Mater. Sci., 36: 259-263.
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  16. Khairnar, A.G. and A.M. Mahajan, 2013. Effect of post-deposition annealing temperature on RF-Sputtered HfO2 thin film for advanced CMOS technology. Solid State Sci., 15: 24-28.
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  17. Tirmali, P.M., A.G. Khairnar, B.N. Joshi and A.M. Mahajan, 2011. Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors. Solid-State Electron., 62: 44-47.
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  18. Mahajan, A.M., A.G. Khairnar and B.J. Thibeault, 2011. Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ULSI technology. J. Nano-Electron. Phys., 3: 647-650.
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Member since September, 2017