Dr. Stephen  J. Pearton

Dr. Stephen J. Pearton

Professor
University of Florida, U.S.


Highest Degree
Ph.D. in Atomic Energy from University of Tasmania, Australia

Share this Profile

Area of Interest:

Physics
100%
Atomic Physics
62%
Nuclear Energy
90%
Semiconductor
75%
Photonics
55%

Selected Publications

    li style="padding-left:17px;">Lee, J.W., K.D. Mackenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy and F. Ren, 998. Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs. Solid-State Electron., 42: 1021-1025.
    CrossRef  |  Direct Link  |  
  1. Yang, J., Z. Chen, F. Ren, S.J. Pearton and G. Yang et al., 2018. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers. J. Vacuum Sci. Technol. B, Vol. 36, No. 1. 10.1116/1.5013155.
    CrossRef  |  Direct Link  |  

  2. Yang, J., C. Fares, F. Ren, R. Sharma and E. Patrick et al., 2018. Effects of fluorine incorporation into β-Ga2O3. J. Applied Phys., Vol. 123, No. 16. 10.1063/1.5031001.
    CrossRef  |  Direct Link  |  

  3. Yakimov, E.B., A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov and J. Yang et al., 2018. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current. J. Applied Phys., Vol. 123, No. 18. 10.1063/1.5027559.
    CrossRef  |  Direct Link  |  

  4. Yakimov, E.B., A.Y. Polyakov, I.H. Lee and S.J. Pearton, 2018. Recombination properties of dislocations in GaN. J. Applied Phys., Vol. 123, No. 16. 10.1063/1.4995580.
    CrossRef  |  Direct Link  |  

  5. Weiser, P., M. Stavola, W.B. Fowler, Y. Qin and S. Pearton, 2018. Structure and vibrational properties of the dominant OH center in β-Ga2O3. Applied Phys. Lett., Vol. 112, No. 23. 10.1063/1.5029921.
    CrossRef  |  Direct Link  |  

  6. Polyakov, A.Y., N.B. Smirnov, I.V. Shchemerov, J. Yang and F. Ren et al., 2018. Trapping phenomena in InAlN/GaN high electron mobility transistors. ECS J. Solid State Sci. Technol., 7: Q1-Q7.
    CrossRef  |  Direct Link  |  

  7. Polyakov, A.Y., N.B. Smirnov, I.V. Shchemerov, E.B. Yakimov and J. Yang et al., 2018. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage. Applied Phys. Lett., Vol. 112, No. 3. 10.1063/1.5012993.
    CrossRef  |  Direct Link  |  

  8. Polyakov, A.Y., N.B. Smirnov, I.V. Shchemerov, D. Gogova, S.A. Tarelkin and S.J. Pearton, 2018. Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3. J. Applied Phys., Vol. 123, No. 11. 10.1063/1.5025916.
    CrossRef  |  Direct Link  |  

  9. Pearton, S.J., M. Mastro and F. Ren, 2018. Gallium oxide (Ga2O3): Synthesis, Properties and Applications. Elsevier, Oxford, UK.

  10. Pearton, S.J., J. Yang, P.H. Cary IV, F. Ren, J. Kim, M.J. Tadjer and M.A. Mastro, 2018. A review of Ga2O3 materials, processing and devices. Applied Phys. Rev., Vol. 5, No. 1. 10.1063/1.5006941.
    CrossRef  |  Direct Link  |  

  11. Lee, J., E. Flitsiyan, L. Chernyak, J. Yang and F. Ren et al., 2018. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length. Applied Phys. Lett., Vol. 112, No. 8. 10.1063/1.5011971.
    CrossRef  |  Direct Link  |  

  12. Lee, G., S.J. Pearton, F. Ren and J. Kim, 2018. Two-dimensionally layered p-black phosphorus/n-MoS2/p-black phosphorus heterojunctions. ACS Applied Mater. Interfaces, 10: 10347-10352.
    CrossRef  |  Direct Link  |  

  13. Jung, S., K.H. Baik, F. Ren, S.J. Pearton and S. Jang, 2018. AlGaN/GaN heterostructure based Schottky diode sensors with ZnO nanorods for environmental ammonia monitoring applications. ECS J. Solid State Sci. Technol., 7: Q3020-Q3024.
    CrossRef  |  Direct Link  |  

  14. Jang, S., S. Jung, K. Beers, J. Yang and F. Ren et al., 2018. A comparative study of wet etching and contacts on (2̄01) and (010) oriented β-Ga2O3. J. Alloys Compd., 731: 118-125.
    CrossRef  |  Direct Link  |  

  15. Baik, K.H., S. Jung, F. Ren, S.J. Pearton and S. Jang, 2018. Moisture insensitive PMMA coated Pt-AlGaN/GaN diode hydrogen sensor and its thermal stability. ECS J. Solid State Sci. Technol., 7: Q3009-Q3013.
    CrossRef  |  Direct Link  |  

  16. Yang, J., S. Ahn, F. Ren, S.J. Pearton, S. Jang, J. Kim and A. Kuramata, 2017. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3. Applied Phys. Lett., Vol. 110, No. 19. 10.1063/1.4983203.
    CrossRef  |  Direct Link  |  

  17. Yang, J., S. Ahn, F. Ren, S.J. Pearton, S. Jang and A. Kuramata, 2017. High breakdown voltage (-201) β-Ga2O3 Schottky rectifiers. IEEE Electron Device Lett., 38: 906-909.
    CrossRef  |  Direct Link  |  

  18. Yang, J., S. Ahn, F. Ren, S. Pearton and R. Khanna et al., 2017. Inductively coupled plasma etching of bulk, single-crystal Ga2O3. J. Vacuum Sci. Technol. B, Vol. 35, No. 3. 10.1116/1.4982714.
    CrossRef  |  Direct Link  |  

  19. Yang, J., S. Ahn, F. Ren, R. Khanna and K. Bevlin et al., 2017. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes. Applied Phys. Lett., Vol. 110, No. 14. 10.1063/1.4979592.
    CrossRef  |  Direct Link  |  

  20. Yang, J., P. Carey IV, F. Ren, Y.L. Wang and M.L. Good et al., 2017. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures. Applied Phys. Lett., Vol. 111, No. 20. 10.1063/1.5011151.
    CrossRef  |  Direct Link  |  

  21. Yang, J., F. Ren, S.J. Pearton, G. Yang, J. Kim and A. Kuramata, 2017. 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers. J. Vacuum Sci. Technol. B, Vol. 35, No. 3. 10.1116/1.4983377.
    CrossRef  |  Direct Link  |  

  22. Yang, J., F. Ren, R. Khanna, K. Bevlin and D. Geerpuram et al., 2017. Annealing of dry etch damage in metallized and bare (-201) Ga2O3. J. Vacuum Sci. Technol. B, Vol. 35, No. 5. 10.1116/1.4986300.
    CrossRef  |  Direct Link  |  

  23. Yang, G., S. Jang, F. Ren, S.J. Pearton and J. Kim, 2017. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. ACS Applied Mater. Interfaces, 9: 40471-40476.
    CrossRef  |  Direct Link  |  

  24. Whiting, P.G., N.G. Rudawski, M.R. Holzworth, S.J. Pearton and K.S. Jones et al., 2017. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. Microelectron. Reliab., 70: 41-48.
    CrossRef  |  Direct Link  |  

  25. Whiting, P.G., M.R. Holzworth, A.G. Lind, S.J. Pearton and K.S. Jones et al., 2017. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliab., 70: 32-40.
    CrossRef  |  Direct Link  |  

  26. Sharma, R., E. Patrick, M.E. Law, S. Ahn, F. Ren, S.J. Pearton and A. Kuramata, 2017. Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3. ECS J. Solid State Sci. Technol., 6: P794-P797.
    CrossRef  |  Direct Link  |  

  27. Ren, F., S.J. Pearton, S. Ahn, Y.H. Lin and F. Machuca et al., 2017. AlGaN/GaN high electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers. ECS J. Solid State Sci. Technol., 6: S3078-S3080.
    CrossRef  |  Direct Link  |  

  28. Ren, F. and S.J. Pearton, 2017. Semiconductor-Based Sensors. World Scientific, Singapore.

  29. Polyakov, A.Y., N.B. Smirnov, I.V. Shchemerov, I.H. Lee and T. Jang et al., 2017. Current relaxation analysis in AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 35, No. 1. 10.1116/1.4973973.
    CrossRef  |  Direct Link  |  

  30. Polyakov, A.Y., N.B. Smirnov, I.V. Shchemerov, F. Ren and S.J. Pearton, 2017. Gate-lag in AlGaN/GaN high electron mobility transistors: A model of charge capture. ECS J. Solid State Sci. Technol., 6: S3034-S3039.
    CrossRef  |  Direct Link  |  

  31. Mastro, M.A., A. Kuramata, J. Calkins, J. Kim, F. Ren and S.J. Pearton, 2017. Opportunities and future directions for Ga2O3. ECS J. Solid State Sci. Technol., 6: P356-P359.
    CrossRef  |  Direct Link  |  

  32. Lee, J., E. Flitsiyan, L. Chernyak, S. Ahn and F. Ren et al., 2017. Optical signature of the electron injection in Ga2O3. ECS J. Solid State Sci. Technol., 6: Q3049-Q3051.
    CrossRef  |  Direct Link  |  

  33. Lee, J., A. Yadav, M. Antia, V. Zaffino and E. Flitsiyan et al., 2017. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors. Radiat. Eff. Defects Solids, 172: 250-256.
    CrossRef  |  Direct Link  |  

  34. Lee, I.H., H.S. Cho, K.B. Bae, A.Y. Polyakov and N.B. Smirnov et al., 2017. Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes. J. Applied Phys., Vol. 121, No. 4. 10.1063/1.4974971.
    CrossRef  |  Direct Link  |  

  35. Lee, I.H., A.Y. Polyakov, S.M. Hwang, N.M. Shmidt and E.I. Shabunina et al., 2017. Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs. Applied Phys. Lett., Vol. 111, No. 6. 10.1063/1.4985190.
    CrossRef  |  Direct Link  |  

  36. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, R.A. Zinovyev and K.B. Bae et al., 2017. Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges. Applied Phys. Lett., Vol. 110, No. 19. 10.1063/1.4983556.
    CrossRef  |  Direct Link  |  

  37. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov and T.H. Chung et al., 2017. Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. ECS J. Solid State Sci. Technol., 6: Q127-Q131.
    CrossRef  |  Direct Link  |  

  38. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov and P.B. Lagov et al., 2017. Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments. J. Applied Phys., Vol. 122, No. 11. 10.1063/1.5000956.
    CrossRef  |  Direct Link  |  

  39. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov and N.M. Shmidt et al., 2017. Electron irradiation of near-UV GaN/InGaN light emitting diodes. Physica Status Solidi (a), Vol. 214, No. 10. 10.1002/pssa.201700372.
    CrossRef  |  Direct Link  |  

  40. Lee, I.H., A.Y. Polyakov, E.B. Yakimov, N.B. Smirnov and I.V. Shchemerov et al., 2017. Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy. Applied Phys. Lett., Vol. 110, No. 11. 10.1063/1.4978641.
    CrossRef  |  Direct Link  |  

  41. Kwon, Y., G. Lee, S. Oh, J. Kim, S.J. Pearton and F. Ren, 2017. Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching. Applied Phys. Lett., Vol. 110, No. 13. 10.1063/1.4979028.
    CrossRef  |  Direct Link  |  

  42. Jung, S., K.H. Baik, F. Ren, S.J. Pearton and S. Jang, 2017. Temperature and humidity dependence of response of PMGI-encapsulated Pt-AlGaN/GaN diodes for hydrogen sensing. IEEE Sens. J., 17: 5817-5822.
    CrossRef  |  Direct Link  |  

  43. Jung, S., K.H. Baik, F. Ren, S.J. Pearton and S. Jang, 2017. Silver-functionalized AlGaN/GaN heterostructure diode for ethanol sensing. J. Electrochem. Soc., 164: B417-B420.
    CrossRef  |  Direct Link  |  

  44. Jung, S., K.H. Baik, F. Ren, S.J. Pearton and S. Jang, 2017. Pt-AlGaN/GaN hydrogen sensor with water-blocking PMMA layer. IEEE Electron Device Lett., 38: 657-660.
    CrossRef  |  Direct Link  |  

  45. Jung, S., K.H. Baik, F. Ren, S.J. Pearton and S. Jang, 2017. Detection of ammonia at low concentrations (0.1-2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 35, No. 4. 10.1116/1.4989370.
    CrossRef  |  Direct Link  |  

  46. Hays, D.C., B.P. Gila, S.J. Pearton, R. Thorpe and F. Ren, 2017. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions. Vacuum, 136: 137-141.
    CrossRef  |  Direct Link  |  

  47. Hays, D.C., B.P. Gila, S.J. Pearton, A. Trucco, R. Thorpe and F. Ren, 2017. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4. J. Vacuum Sci. Technol. B, Vol. 35, No. 1. 10.1116/1.4973882.
    CrossRef  |  Direct Link  |  

  48. Hays, D.C., B.P. Gila, S.J. Pearton and F. Ren, 2017. Energy band offsets of dielectrics on InGaZnO4. Applied Phys. Rev., Vol. 4, No. 2. 10.1063/1.4980153.
    CrossRef  |  Direct Link  |  

  49. Choi, B.S., K.W. Kim, B.P. Gila, D.P. Norton, S.J. Pearton and H. Cho, 2017. Measurement of band offsets in MgO/InGaZnO4 heterojunction by X-ray photoelectron spectroscopy. J. Ceram. Process. Res., 18: 687-690.
    Direct Link  |  

  50. Carey, P.H., F. Ren, D.C. Hays, B.P. Gila, S.J. Pearton, S. Jang and A. Kuramata, 2017. Valence and conduction band offsets in AZO/Ga2O3 heterostructures. Vacuum, 141: 103-108.
    CrossRef  |  Direct Link  |  

  51. Carey, IV P.H., J. Yang, F. Ren, D.C. Hays, S.J. Pearton, A. Kuramata and I.I. Kravchenko, 2017. Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers. J. Vacuum Sci. Technol. B, Vol. 35, No. 6. 10.1116/1.4995816.
    CrossRef  |  Direct Link  |  

  52. Carey, IV P.H., J. Yang, F. Ren, D.C. Hays and S.J. Pearton et al., 2017. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. AIP Adv., Vol. 7, No. 9. 10.1063/1.4996172.
    CrossRef  |  Direct Link  |  

  53. Carey, IV P.H., F. Ren, D.C. Hays, B.P. Gila, S.J. Pearton, S. Jang and A. Kuramata, 2017. Conduction and valence band offsets of LaAl2O3 with (-201) β-Ga2O3. J. Vacuum Sci. Technol. B, Vol. 35, No. 4. 10.1116/1.4984097.
    CrossRef  |  Direct Link  |  

  54. Carey, IV P.H., F. Ren, D.C. Hays, B.P. Gila, S.J. Pearton, S. Jang and A. Kuramata, 2017. Band offsets in ITO/Ga2O3 heterostructures. Applied Surf. Sci., 422: 179-183.
    CrossRef  |  Direct Link  |  

  55. Carey, IV P.H., F. Ren, D.C. Hays, B.P. Gila, S.J. Pearton, S. Jang and A. Kuramata, 2017. Band alignment of atomic layer deposited SiO2 and HfSiO4 with (2̄01) β-Ga2O3. Jpn. J. Applied Phys., Vol. 56, No. 7. 10.7567/JJAP.56.071101.
    CrossRef  |  Direct Link  |  

  56. Carey, IV P.H., F. Ren, D.C. Hays, B.P. Gila, S.J. Pearton, S. Jang and A. Kuramata, 2017. Band alignment of Al2O3 with (-201) β-Ga2O3. Vacuum, 142: 52-57.
    CrossRef  |  Direct Link  |  

  57. Ahn, S., F. Ren, L. Yuan, S.J. Pearton and A. Kuramata, 2017. Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on β-Ga2O3. ECS J. Solid State Sci. Technol., 6: P68-P72.
    CrossRef  |  Direct Link  |  

  58. Ahn, S., F. Ren, E. Patrick, M.E. Law and S.J. Pearton, 2017. Thermal stability of implanted or plasma exposed deuterium in single crystal Ga2O3. ECS J. Solid State Sci. Technol., 6: Q3026-Q3029.
    CrossRef  |  Direct Link  |  

  59. Yakimov, E.B., P.S. Vergeles, A.Y. Polyakov, I.H. Lee and S.J. Pearton, 2016. Radiation enhanced basal plane dislocation glide in GaN. Jpn. J. Applied Phys., Vol. 55. 10.7567/JJAP.55.05FM03.
    CrossRef  |  Direct Link  |  

  60. Ren, F., S.J. Pearton, S. Ahn, Y.H. Lin and F. Machuca et al., 2016. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates. J. Vacuum Sci. Technol. B, Vol. 34, No. 5. 10.1116/1.4963064.
    CrossRef  |  Direct Link  |  

  61. Polyakov, A.Y., N.B. Smirnov, E.B. Yakimov, S.A. Tarelkin and A.V. Turutin et al., 2016. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN. J. Alloys Compd., 686: 1044-1052.
    CrossRef  |  Direct Link  |  

  62. Polyakov, A.Y., N.B. Smirnov, E.B. Yakimov, I.H. Lee and S.J. Pearton, 2016. Electrical, luminescent and deep trap properties of Si doped n-GaN grown by pendeo epitaxy. J. Applied Phys., Vol. 119, No. 1. 10.1063/1.4939649.
    CrossRef  |  Direct Link  |  

  63. Polyakov, A.Y., N.B. Smirnov, A.V. Turutin, I.S. Shemerov, F. Ren, S.J. Pearton and J.W. Johnson, 2016. Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates. J. Vacuum Sci. Technol. B, Vol. 34, No. 4. 10.1116/1.4953347.
    CrossRef  |  Direct Link  |  

  64. Polyakov, A.Y., N.B. Smirnov, A.A. Dorofeev, N.B. Gladysheva and E.S. Kondratyev et al., 2016. Deep traps in AlGaN/GaN high electron mobility transistors on SiC. ECS J. Solid State Sci. Technol., 5: Q260-Q265.
    CrossRef  |  Direct Link  |  

  65. Pearton, S.J., F. Ren, E. Patrick, M.E. Law and A.Y. Polyakov, 2016. Ionizing radiation damage effects on GaN devices. ECS J. Solid State Sci. Technol., 5: Q35-Q60.
    CrossRef  |  Direct Link  |  

  66. Oh, S., J. Kim, F. Ren, S.J. Pearton and J. Kim, 2016. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity. J. Mater. Chem. C, 4: 9245-9250.
    CrossRef  |  Direct Link  |  

  67. Morrow, W.K., S.J. Pearton and F. Ren, 2016. Review of graphene as a solid state diffusion barrier. Small, 12: 120-134.
    CrossRef  |  Direct Link  |  

  68. Morrow, W.K., C. Lee, S.P. DenBaars, F. Ren and S.J. Pearton, 2016. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN. Vacuum, 128: 34-38.
    CrossRef  |  Direct Link  |  

  69. Lim, W., H. Kum, Y.J. Choi, S.H. Sim and J.H. Yeon et al., 2016. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes. J. Vacuum Sci. Technol. B, Vol. 34, No. 4. 10.1116/1.4959027.
    CrossRef  |  Direct Link  |  

  70. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, E.B. Yakimov and S.A. Tarelkin et al., 2016. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN. J. Applied Phys., Vol. 119, No. 20. 10.1063/1.4952734.
    CrossRef  |  Direct Link  |  

  71. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, E.B. Yakimov and S.A. Tarelkin et al., 2016. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition. Applied Phys. Express, Vol. 9, No. 6. 10.7567/APEX.9.061002.
    CrossRef  |  Direct Link  |  

  72. Kim, B.J., S. Ahn, F. Ren, S.J. Pearton, G. Yang and J. Kim, 2016. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 34, No. 4. 10.1116/1.4959028.
    CrossRef  |  Direct Link  |  

  73. Kang, T.S., Y.H. Lin, S. Ahn, F. Ren, B.P. Gila, S.J. Pearton and D.J. Cheney, 2016. Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping. J. Vacuum Sci. Technol. B, Vol. 34, No. 1. 10.1116/1.4936861.
    CrossRef  |  Direct Link  |  

  74. Hays, D.C., B.P. Gila, S.J. Pearton, B.J. Kim and F. Ren, 2016. Band alignment in ZrSiO4/ZnO heterojunctions. Vacuum, 125: 113-117.
    CrossRef  |  Direct Link  |  

  75. Hays, D.C., B.P. Gila, S.J. Pearton and F. Ren, 2016. Valence and conduction band offsets in sputtered LaAlO3/InGaZnO4 heterostructures. ECS J. Solid State Sci. Technol., 5: P680-P684.
    CrossRef  |  Direct Link  |  

  76. Ahn, S., Y.H. Lin, F. Ren, S. Oh and Y. Jung et al., 2016. Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors. J. Vacuum Sci. Technol. B, Vol. 34, No. 4. 10.1116/1.4950872.
    CrossRef  |  Direct Link  |  

  77. Ahn, S., F. Ren, S. Oh, Y. Jung and J. Kim et al., 2016. Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors. J. Vacuum Sci. Technol. B, Vol. 34, No. 4. 10.1116/1.4948361.
    CrossRef  |  Direct Link  |  

  78. Ahn, S., F. Ren, J. Kim, S. Oh, J. Kim, M.A. Mastro and S.J. Pearton, 2016. Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors. Applied Phys. Lett., Vol. 109, No. 6. 10.1063/1.4960651.
    CrossRef  |  Direct Link  |  

  79. Ahn, S., F. Ren, E. Patrick, M.E. Law, S.J. Pearton and A. Kuramata, 2016. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3. Applied Phys. Lett., Vol. 109, No. 24. 10.1063/1.4972265.
    CrossRef  |  Direct Link  |  

  80. Ahn, S., B.J. Kim, Y.H. Lin, F. Ren and S.J. Pearton et al., 2016. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide. J. Vacuum Sci. Technol. B, Vol. 34, No. 5. 10.1116/1.4959786.
    CrossRef  |  Direct Link  |  

  81. Yin, W., K. Smithe, P. Weiser, M. Stavola and W.B. Fowler et al., 2015. Hydrogen centers and the conductivity of In2O3 single crystals. Phys. Rev. B, Vol. 91, No. 7. 10.1103/PhysRevB.91.075208.
    CrossRef  |  Direct Link  |  

  82. Yakimov, E.B., P.S. Vergeles, A.Y. Polyakov, I.H. Lee and S.J. Pearton, 2015. Movement of basal plane dislocations in GaN during electron beam irradiation. Applied Phys. Lett., Vol. 106, No. 13. 10.1063/1.4916632.
    CrossRef  |  Direct Link  |  

  83. Yadav, A., E. Flitsiyan, L. Chernyak, Y.H. Hwang and Y.L. Hsieh et al., 2015. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors. Radiat. Eff. Defects Solids, 170: 377-385.
    CrossRef  |  Direct Link  |  

  84. Polyakov, A.Y., N.B. Smirnov, I.H. Lee and S.J. Pearton, 2015. Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance. J. Vacuum Sci. Technol. B, Vol. 33, No. 6. 10.1116/1.4932013.
    CrossRef  |  Direct Link  |  

  85. Pearton, S.J., Y.S. Hwang and F. Ren, 2015. Radiation effects in GaN-based high electron mobility transistors. JOM, 67: 1601-1611.
    CrossRef  |  Direct Link  |  

  86. Patrick, E., M. Choudhury, F. Ren, S.J. Pearton and M.E. Law, 2015. Simulation of radiation effects in AlGaN/GaN HEMTs. ECS Trans., 66: 21-31.
    CrossRef  |  Direct Link  |  

  87. Kim, B.J., Y.H. Hwang, S. Ahn, W. Zhu and C. Dong et al., 2015. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing. Applied Phys. Lett., Vol. 106, No. 15. 10.1063/1.4918530.
    CrossRef  |  Direct Link  |  

  88. Kim, B.J., Y.H. Hwang, S. Ahn, F. Ren, S.J. Pearton, J. Kim and T.S. Jang, 2015. Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes. J. Vacuum Sci. Technol. B, Vol. 33, No. 5. 10.1116/1.4930297.
    CrossRef  |  Direct Link  |  

  89. Kim, B.J., S. Ahn, Y.H. Hwang, F. Ren, S.J. Pearton, J. Kim and M.L. Zhang, 2015. Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 33, No. 3. 10.1116/1.4916882.
    CrossRef  |  Direct Link  |  

  90. Kang, T.S., F. Ren, B.P. Gila, S.J. Pearton and E. Patrick et al., 2015. Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping. J. Vacuum Sci. Technol. B, Vol. 33, No. 6. 10.1116/1.4931790.
    CrossRef  |  Direct Link  |  

  91. Hwang, Y.H., S. Ahn, C. Dong, W. Zhu and B.J. Kim et al., 2015. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs. J. Vacuum Sci. Technol. B, Vol. 33, No. 3. 10.1116/1.4919237.
    CrossRef  |  Direct Link  |  

  92. Hwang, Y.H., C. Dong, Y.L. Hsieh, W. Zhu and S. Ahn et al., 2015. Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 33, No. 4. 10.1116/1.4922022.
    CrossRef  |  Direct Link  |  

  93. Hays, D.C., B.P. Gila, S.J. Pearton, B.J. Kim, F. Ren and T.S. Jang, 2015. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering. J. Vacuum Sci. Technol. B, Vol. 33, No. 5. 10.1116/1.4931035.
    CrossRef  |  Direct Link  |  

  94. Hays, D.C., B.P. Gila, S.J. Pearton and F. Ren, 2015. ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy. Vacuum, 122: 195-200.
    CrossRef  |  Direct Link  |  

  95. Hays, D.C., B.P. Gila, S.J. Pearton and F. Ren, 2015. Band offsets in HfSiO4/IGZO heterojunctions. J. Vacuum Sci. Technol. B, Vol. 33, No. 6. 10.1116/1.4936117.
    CrossRef  |  Direct Link  |  

  96. Hays, D.C., B.P. Gila, E.S. Lambers, S.J. Pearton and F. Ren, 2015. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures. Vacuum, 116: 60-64.
    CrossRef  |  Direct Link  |  

  97. Ahn, S., W. Zhu, C. Dong, L. Le and Y.H. Hwang et al., 2015. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 33, No. 3. 10.1116/1.4918715.
    CrossRef  |  Direct Link  |  

  98. Ahn, S., C. Dong, W. Zhu, B.J. Kim and Y.H. Hwang et al., 2015. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 33, No. 5. 10.1116/1.4928730.
    CrossRef  |  Direct Link  |  

  99. Yang, G., Y. Jung, C.V. Cuervo, F. Ren, S.J. Pearton and J. Kim, 2014. GaN-based light-emitting diodes on graphene-coated flexible substrates. Opt. Express, 22: A812-A817.
    CrossRef  |  Direct Link  |  

  100. Xi, Y., Y.L. Hsieh, Y.H. Hwang, S. Li and F. Ren et al., 2014. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 32, No. 1. 10.1116/1.4836577.
    CrossRef  |  Direct Link  |  

  101. Pearton, S.J. and F. Ren, 2014. p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: Application to light emitting diodes and laser diodes. Int. Mater. Rev., 59: 61-83.
    CrossRef  |  Direct Link  |  

  102. Pearton, S.J. and F. Ren, 2014. Advances in ZnO-based materials for light emitting diodes. Curr. Opin. Chem. Eng., 3: 51-55.
    CrossRef  |  Direct Link  |  

  103. Park, J.C., K.W. Kim, J.W. Lee, B.P. Gila and D.P. Norton et al., 2014. Measurement of band offsets in (Ce, Tb) MgAl11O19/InGaZnO4 heterostructure system. J. Ceram. Process. Res., 15: 545-548.
    Direct Link  |  

  104. Park, J.C., K.W. Kim, B.P. Gila, E.S. Lambers and D.P. Norton et al., 2014. Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. J. Nanosci. Nanotechnol., 14: 8445-8448.
    CrossRef  |  Direct Link  |  

  105. Liu, L., Y.H. Hwang, Y. Xi, F. Ren and V. Craciun et al., 2014. Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate. J. Vacuum Sci. Technol. B, Vol. 32, No. 2. 10.1116/1.4866401.
    CrossRef  |  Direct Link  |  

  106. Liu, L., Y. Xi, S. Ahn, F. Ren, B.P. Gila, S.J. Pearton and I.I. Kravchenko, 2014. Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing. J. Vacuum Sci. Technol. B, Vol. 32, No. 5. 10.1116/1.4891168.
    CrossRef  |  Direct Link  |  

  107. Li, S., Y.H. Hwang, Y.L. Hsieh, L. Lei and F. Ren et al., 2014. Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation. J. Vacuum Sci. Technol. B, Vol. 32, No. 2. 10.1116/1.4864070.
    CrossRef  |  Direct Link  |  

  108. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, C.K. Hahn and S.J. Pearton, 2014. Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions. J. Vacuum Sci. Technol. B, Vol. 32, No. 5. 10.1116/1.4895840.
    CrossRef  |  Direct Link  |  

  109. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and A.S. Usikov et al., 2014. Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy. J. Applied Phys., Vol. 115, No. 22. 10.1063/1.4882715.
    CrossRef  |  Direct Link  |  

  110. Kim, J.K., K.W. Kim, E.A. Douglas, B.P. Gila and V. Craciun et al., 2014. Band offsets in YSZ/InGaZnO4 heterostructure system. J. Nanosci. Nanotechnol., 14: 3925-3927.
    CrossRef  |  Direct Link  |  

  111. Hwang, Y.H., Y.L. Hsieh, L. Lei, S. Li and F. Ren et al., 2014. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 32, No. 3. 10.1116/1.4868632.
    CrossRef  |  Direct Link  |  

  112. Hwang, Y.H., T.S. Kang, F. Ren and S.J. Pearton, 2014. Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area. J. Vacuum Sci. Technol. B, Vol. 32, No. 6. 10.1116/1.4896593.
    CrossRef  |  Direct Link  |  

  113. Hwang, Y.H., S. Li, Y.L. Hsieh, F. Ren and S.J. Pearton et al., 2014. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage. Applied Phys. Lett., Vol. 104, No. 8. 10.1063/1.4866858.
    CrossRef  |  Direct Link  |  

  114. Hwang, Y.H., S. Ahn, C. Dong, F. Ren and B.P. Gila et al., 2014. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors. J. Vacuum Sci. Technol. B, Vol. 32, No. 5. 10.1116/1.4891966.
    CrossRef  |  Direct Link  |  

  115. Baik, K.H., H. Kim, S.N. Lee, E. Lim, S.J. Pearton, F. Ren and S. Jang, 2014. Hydrogen sensing characteristics of semipolar (112̄2) GaN Schottky diodes. Applied Phys. Lett., Vol. 104, No. 7. 10.1063/1.4866010.
    CrossRef  |  Direct Link  |  

  116. Anderson, T., A. Koehler, Y.H. Hwang, Y.L. Hsieh and S. Li et al., 2014. Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 32, No. 5. 10.1116/1.4891629.
    CrossRef  |  Direct Link  |  

  117. Yeh, N.T., P.C. Chiu, J.I. Chyi, F. Ren and S.J. Pearton, 2013. Sb-based semiconductors for low power electronics. J. Mater. Chem. C, 1: 4616-4627.
    CrossRef  |  Direct Link  |  

  118. Yang, G., C. Lee, J. Kim, F. Ren and S.J. Pearton, 2013. Flexible graphene-based chemical sensors on paper substrates. Phys. Chem. Chem. Phys., 15: 1798-1801.
    CrossRef  |  Direct Link  |  

  119. Xi, Y., L. Liu, Y.H. Hwang, O. Phillips and F. Ren et al., 2013. Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4798612.
    CrossRef  |  Direct Link  |  

  120. Xi, Y., L. Liu, F. Ren, S.J. Pearton, J. Kim, A. Dabiran and P.P. Chow, 2013. Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4803743.
    CrossRef  |  Direct Link  |  

  121. Svensson, B.G., S.J. Pearton and C. Jagadish, 2013. Semiconductors and Semimetals: Oxide Semiconductors. Elsevier, Oxford.

  122. Stehr, J.E., X.J. Wang, S. Filippov, S.J. Pearton, I.G. Ivanov, W.M. Chen and I.A. Buyanova, 2013. Defects in N, O and N, Zn implanted ZnO bulk crystals. J. Applied Phys., Vol. 113. 10.1063/1.4795261.
    CrossRef  |  Direct Link  |  

  123. Schwarz, C., A. Yadav, M. Shatkhin, E. Flitsiyan and L. Chernyak et al., 2013. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 102. 10.1063/1.4792240.
    CrossRef  |  Direct Link  |  

  124. Polyakov, A.Y., S.J. Pearton, P. Frenzer, F. Ren, L. Liu and J. Kim, 2013. Radiation effects in GaN materials and devices. J. Mater. Chem. C, 1: 877-887.
    CrossRef  |  Direct Link  |  

  125. Polyakov, A.Y., N.B. Smirnov, E.A. Kozhukhova, A.V. Osinsky and S.J. Pearton, 2013. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition. J. Vacuum Sci. Technol. B, Vol. 31, No. 5. 10.1116/1.4820905.
    CrossRef  |  Direct Link  |  

  126. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton et al., 2013. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4773057.
    CrossRef  |  Direct Link  |  

  127. Pearton, S.J., R. Deist, F. Ren, L. Liu, A.Y. Polyakov and J. Kim, 2013. Review of radiation damage in GaN-based materials and devices. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4799504.
    CrossRef  |  Direct Link  |  

  128. Pearton, S.J. and F. Ren, 2013. Wide bandgap semiconductor one-dimensional nanostructures for applications in nanoelectronics and nanosensors. Nanomater. Nanotechnol., Vol. 3. 10.5772/56188.
    CrossRef  |  Direct Link  |  

  129. Patrick, E., M.E. Law, L. Liu, C.V. Cuervo, Y. Xi, F. Ren and S.J. Pearton, 2013. Modeling proton irradiation in AlGaN/GaN HEMTs: Understanding the increase of critical voltage. IEEE Trans. Nucl. Sci., 60: 4103-4108.
    CrossRef  |  Direct Link  |  

  130. Park, J.C., O.G. Jeong, J.K. Kim, Y.H. Yun, S.J. Pearton and H. Cho, 2013. Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films. Thin Solid Films, 546: 136-140.
    CrossRef  |  Direct Link  |  

  131. Park, H., K.H. Baik, J. Kim, F. Ren and S.J. Pearton, 2013. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Opt. Express, 21: 12908-12913.
    CrossRef  |  Direct Link  |  

  132. Lo, C.F., Y. Xi, L. Liu, S.J. Pearton and S. Dore et al., 2013. Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors. Sens. Actuat. B: Chem., 176: 708-712.
    CrossRef  |  Direct Link  |  

  133. Liu, L., C.V. Cuervo, Y. Xi, F. Ren and S.J. Pearton et al., 2013. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4813785.
    CrossRef  |  Direct Link  |  

  134. Liu, L., C.F. Lo, Y. Xi, Y. Wang and F. Ren et al., 2013. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4788904.
    CrossRef  |  Direct Link  |  

  135. Liu, L., C.F. Lo, Y. Xi, F. Ren and S.J. Pearton et al., 2013. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4773060.
    CrossRef  |  Direct Link  |  

  136. Lim, W., Y. Sung, S.J. Kim, Y.C. Shin and T.S. Jang et al., 2013. Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4773006.
    CrossRef  |  Direct Link  |  

  137. Kim, H.Y., J. Kim, L. Liu, C.F. Lo, F. Ren and S.J. Pearton, 2013. Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 31, No. 5. 10.1116/1.4820129.
    CrossRef  |  Direct Link  |  

  138. Kim, B.J., G. Yang, H.Y. Kim, K.H. Baik and M.A. Mastro et al., 2013. GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes. Opt. Express, 21: 29025-29030.
    CrossRef  |  Direct Link  |  

  139. Hwang, Y.S., L. Liu, F. Ren, A.Y. Polyakov and N.B. Smirnov et al., 2013. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4795210.
    CrossRef  |  Direct Link  |  

  140. Hwang, Y.H., L. Liu, C. Velez, F. Ren and B.P. Gila et al., 2013. GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation. J. Vacuum Sci. Technol. B, Vol. 31, No. 5. 10.1116/1.4816477.
    CrossRef  |  Direct Link  |  

  141. Hung, S.C., W.Y. Woon, S.M. Lan, F. Ren and S.J. Pearton, 2013. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor. Applied Phys. Lett., Vol. 103, No. 8. 10.1063/1.4818671.
    CrossRef  |  Direct Link  |  

  142. Holzworth, M.R., N.G. Rudawski, P.G. Whiting, S.J. Pearton and K.S. Jones et al., 2013. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 103. 10.1063/1.4813535.
    CrossRef  |  Direct Link  |  

  143. Douglas, E.A., E. Bielejec, P. Frenzer, B.R. Yates and S.J. Pearton et al., 2013. Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 31. 10.1116/1.4792370.
    CrossRef  |  Direct Link  |  

  144. Douglas, E.A., D. Zeenberg, M. Maeda, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2013. Depth-resolved cathodoluminescence spectroscopy characterization of RF stressed AlGaN/GaN high electron mobility transistors. ECS Solid State Lett., 2: Q39-Q42.
    CrossRef  |  Direct Link  |  

  145. Cheney, D.J., E.A. Douglas, L. Liu, C.F. Lo and Y.Y. Xi et al., 2013. Reliability studies of AlGaN/GaN high electron mobility transistors. Semicond. Sci. Technol., Vol. 28. 10.1088/0268-1242/28/7/074019.
    CrossRef  |  Direct Link  |  

  146. Whiting, P.G., N.G. Rudawski, M.R. Holzworth, S.J. Pearton and K.S. Jones et al., 2012. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliability, 52: 2542-2546.
    CrossRef  |  Direct Link  |  

  147. Wang, X.J., W.M. Chen, F. Ren, S. Pearton and I.A. Buyanova, 2012. Effects of P implantation and post-implantation annealing on defect formation in ZnO. J. Applied Phys., Vol. 111. 10.1063/1.3687919.
    CrossRef  |  Direct Link  |  

  148. Wang, X., C.F. Lo, L. Liu, C.V. Cuervo and R. Fan et al., 2012. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4751278.
    CrossRef  |  Direct Link  |  

  149. Wang, S.Y., C.A. Chang, C.M. Chang, S.H. Chen, F. Ren, S.J. Pearton and J.I. Chyi, 2012. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors. Applied Phys. Lett., Vol. 101. 10.1063/1.4745208.
    CrossRef  |  Direct Link  |  

  150. Ueda, O. and S.J. Pearton, 2012. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer, Berlin.

  151. Shin, J.Y., K.H. Choi, K.H. Noh, D.K. Park and K.Y. Sohn et al., 2012. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas. Thin Solid Films, 521: 245-248.
    CrossRef  |  Direct Link  |  

  152. Ren, F. and S.J. Pearton, 2012. Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio‐applications. Phys. Status Solidi C, 9: 393-398.
    CrossRef  |  Direct Link  |  

  153. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton et al., 2012. Metastable centers in AlGaN/AlN/GaN heterostructures. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4731256.
    CrossRef  |  Direct Link  |  

  154. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton et al., 2012. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN and InAlN/GaN heterojunctions. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4766727.
    CrossRef  |  Direct Link  |  

  155. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton et al., 2012. Admittance spectra studies of quantum well states in AlGaN/AlN/GaN heterojunctions. ECS J. Solid State Sci. Technol., 1: P152-P156.

  156. Pearton, S.J., W.T. Lim, E. Douglas, H. Cho and F. Ren, 2012. Flexible electronics based on InGaZnO transparent thin film transistors. Key Eng. Mater., 521: 141-151.
    CrossRef  |  Direct Link  |  

  157. Pearton, S.J., 2012. GaN and ZnO-Based Materials and Devices. Springer, Heidelberg.

  158. Pearton, S.J. and F. Ren, 2012. Gallium nitride-based gas, chemical and biomedical sensors. IEEE Instrum. Meas. Magaz., 15: 16-21.
    CrossRef  |  Direct Link  |  

  159. Lo, C.F., L. Liu, T.S. Kang, F. Ren and O. Laboutin et al., 2012. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3671020.
    CrossRef  |  Direct Link  |  

  160. Lo, C.F., L. Liu, T.S. Kang, F. Ren and C. Schwarz et al., 2012. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3698402.
    CrossRef  |  Direct Link  |  

  161. Lo, C.F., L. Liu, F. Ren, S.J. Pearton and B.P. Gila et al., 2012. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4729285.
    CrossRef  |  Direct Link  |  

  162. Lo, C.F., L. Liu, F. Ren, S.J. Pearton and B.P. Gila et al., 2012. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)]. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4737150.
    CrossRef  |  Direct Link  |  

  163. Lo, C.F., L. Liu, B.H. Chu, F. Ren and S.J. Pearton et al., 2012. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3672010.
    CrossRef  |  Direct Link  |  

  164. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2012. Electrical properties and radiation detector performance of free-standing bulk n-GaN. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3690644.
    CrossRef  |  Direct Link  |  

  165. Kim, H.Y., J. Kim, L. Liu, C.F. Lo, F. Ren and S.J. Pearton, 2012. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3676034.
    CrossRef  |  Direct Link  |  

  166. Kim, H.Y., C.F. Lo, L. Liu, F. Ren, J. Kim and S.J. Pearton, 2012. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10 and 15 MeV energies. Applied Phys. Lett., Vol. 100. 10.1063/1.3673906.
    CrossRef  |  Direct Link  |  

  167. Kim, H.Y., C. Lee, J. Kim, F. Ren and S.J. Pearton, 2012. Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3701711.
    CrossRef  |  Direct Link  |  

  168. Kim, H., W. Lim, J.H. Lee, S.J. Pearton, F. Ren and S. Jang, 2012. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks. Sens. Actuat. B: Chem., 164: 64-68.
    CrossRef  |  Direct Link  |  

  169. Kim, B.J., C. Lee, M.A. Mastro, J.K. Hite and C.R. Eddy Jr. et al., 2012. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes. Applied Phys. Lett., Vol. 101. 10.1063/1.4733981.
    CrossRef  |  Direct Link  |  

  170. Kang, T.S., X.T. Wang, C.F. Lo, F. Ren and S.J. Pearton et al., 2012. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.3664283.
    CrossRef  |  Direct Link  |  

  171. Jung, Y., X. Wang, S.H. Kim, F. Ren, J. Kim and S.J. Pearton, 2012. A facile method for flexible GaN‐based light‐emitting diodes. Phys. Status Solidi (RRL)-Rapid Res. Lett., 6: 421-423.
    CrossRef  |  Direct Link  |  

  172. Jung, Y., X. Wang, J. Kim, S.H. Kim, F. Ren, S.J. Pearton and J. Kim, 2012. GaN-based light-emitting diodes on origami substrates. Applied Phys. Lett., Vol. 100. 10.1063/1.4726123.
    CrossRef  |  Direct Link  |  

  173. Jung, Y., S.H. Kim, J. Kim, X. Wang, F. Ren, K.J. Choi and S.J. Pearton, 2012. GaN-based light-emitting diodes by laser lift-off with micro-and nano-sized reflectors. J. Vacuum Sci. Technol. A, Vol. 30. 10.1116/1.4739769.
    CrossRef  |  Direct Link  |  

  174. Johnson, M.R., D.A. Cullen, L. Liu, T.S. Kang and F. Ren et al., 2012. Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4766303.
    CrossRef  |  Direct Link  |  

  175. Hung, S.T., C.J. Chang, C.H. Hsu, B.H. Chu and C.F. Lo et al., 2012. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications. Int. J. Hydrogen Energy, 37: 13783-13788.
    CrossRef  |  Direct Link  |  

  176. Heo, Y.W., S.J. Pearton and D.P. Norton, 2012. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering. J. Nanosci. Nanotechnol., 12: 3264-3267.
    CrossRef  |  Direct Link  |  

  177. Douglas, E.A., J. Stevens, K. Fishgrab, C. Ford, R.J. Shul and S.J. Pearton, 2012. Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4758765.
    CrossRef  |  Direct Link  |  

  178. Douglas, E.A., C.Y. Chang, B.P. Gila, M.R. Holzworth and K.S. Jones et al., 2012. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN high electron mobility transistors. Microelectron. Reliability, 5: 23-28.
    CrossRef  |  Direct Link  |  

  179. Chu, B.H., B.D. Chin, K.H. Baik, S.J. Pearton, F. Ren and S. Jang, 2012. Improved organic light emitting diodes using cryogenic LiF/Al deposition. Japanese J. Applied Phys., Vol. 51. 10.1143/JJAP.51.09MH04.
    CrossRef  |  Direct Link  |  

  180. Cho, H., E.A. Douglas, B.P. Gila, V. Craciun, E.S. Lambers, F. Ren and S.J. Pearton, 2012. Band offsets in HfO2/InGaZnO4 heterojunctions. Applied Phys. Lett., Vol. 100. 10.1063/1.3673905.
    CrossRef  |  Direct Link  |  

  181. Cheney, D.J., R. Deist, B. Gila, J. Navales, F. Ren and S.J. Pearton, 2012. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping. Microelectron. Reliability, 52: 2884-2888.
    CrossRef  |  Direct Link  |  

  182. Cheney, D.J., E.A. Douglas, L. Liu, C.F. Lo, B.P. Gila, F. Ren and S.J. Pearton, 2012. Degradation mechanisms for GaN and GaAs high speed transistors. Materials, 5: 2498-2520.
    CrossRef  |  Direct Link  |  

  183. Chen, C.W., F. Ren, G.C. Chi, S.C. Hung and Y.P. Huang et al., 2012. Effects of semiconductor processing chemicals on conductivity of graphene. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4732517.
    CrossRef  |  Direct Link  |  

  184. Chang, C.J., S.T. Hung, F. Ren, S.J. Pearton, C.F. Lo, C.C. Chen and I.I. Kravchenko, 2012. Oxygen sensing properties of SnO2-gated AlGaN/GaN high electron mobility transistors at low temperatures. J. Vacuum Sci. Technol. B, Vol. 30. .

  185. Chen, C.W., F. Ren, G.C. Chi, S.C. Hung and Y.P. Huang et al., 2012. UV ozone treatment for improving contact resistance on graphene. J. Vacuum Sci. Technol. B, Vol. 30. 10.1116/1.4754566.
    CrossRef  |  Direct Link  |  

  186. Socol, G., D. Craciun, I.N. Mihailescu, N. Stefan and C. Besleaga et al., 2011. High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition. Thin Solid Films, 520: 1274-1277.
    CrossRef  |  Direct Link  |  

  187. Ren, F. and S.J. Pearton, 2011. Semiconductor Device-Based Sensors for Gas, Chemical and Bio Applications. CRC Press, Boca Raton, FL.

  188. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, H. Amano and S.J. Pearton et al., 2011. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency. Applied Phys. Lett., Vol. 98. 10.1063/1.3555470.
    CrossRef  |  Direct Link  |  

  189. Polyakov, A.Y., L.W. Jang, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2011. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process. J. Applied Phys., Vol. 110. 10.1063/1.3658026.
    CrossRef  |  Direct Link  |  

  190. Polyakov, A.Y., I.H. Lee, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton, 2011. Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth. J. Applied Phys., Vol. 109. 10.1063/1.3599894.
    CrossRef  |  Direct Link  |  

  191. Polyakov, A.Y., I.H. Lee, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2011. 10 MeV electrons irradiation effects in variously doped n-GaN. J. Applied Phys., Vol. 109. 10.1063/1.3596819.
    CrossRef  |  Direct Link  |  

  192. Pearton, S.J., C.Y. Chang, B.H. Chu, C.F. Lo, F. Ren, W. Chen and J. Guo, 2011. ZnO, GaN, and InN functionalized nanowires for sensing and photonics applications. IEEE J. Select. Topics Quantum Electron., 17: 1092-1101.
    CrossRef  |  Direct Link  |  

  193. Pearton, S.J., B.P. Gila, B. Appleton, D. Hays, F. Ren, J. Fridmann and P. Mazarov, 2011. Nanoengineering of semiconductor nanowires-synthesis, processing and sensing applications. J. Nanoeng. Nanomanuf., 1: 35-49.
    CrossRef  |  Direct Link  |  

  194. Lo, C.F., L. Liu, T.S. Kang, R. Davies and B.P. Gila et al., 2011. Improvement of off-state stress critical voltage by using Pt-gated AlGaN/GaN high electron mobility transistors. Electrochem. Solid-State Lett., 1: H264-H267.
    CrossRef  |  Direct Link  |  

  195. Lo, C.F., L. Liu, F. Ren, H.Y. Kim and J. Kim et al., 2011. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3644480.
    CrossRef  |  Direct Link  |  

  196. Lo, C.F., L. Liu, C.Y. Chang, F. Ren and V. Craciun et al., 2011. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 29. 10.1116/1.3545811.
    CrossRef  |  

  197. Lo, C.F., F. Ren, S.J. Pearton, A.Y. Polyakov and N.B. Smirnov et al., 2011. Deep traps and thermal measurements on AlGaN/GaN on Si transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3605304.
    CrossRef  |  Direct Link  |  

  198. Lo, C.F., F. Ren, C.Y. Chang, S.J. Pearton and S.H. Chen et al., 2011. Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3589808.
    CrossRef  |  Direct Link  |  

  199. Lo, C.F., B.H. Chu, S.J. Pearton, A. Dabiran and P.P. Chow et al., 2011. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 99. 10.1063/1.3647561.
    CrossRef  |  Direct Link  |  

  200. Liu, L., T.S. Kang, D.A. Cullen, L. Zhou and J. Kim et al., 2011. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3581078.
    CrossRef  |  Direct Link  |  

  201. Liu, L., F. Ren, S.J. Pearton, R.C. Fitch and D.E. Walker et al., 2011. Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3660396.
    CrossRef  |  Direct Link  |  

  202. Liu, L., C.Y. Chang, W. Wu, S.J. Pearton and F. Ren, 2011. Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser. Applied Surface Sci., 257: 2303-2307.
    CrossRef  |  Direct Link  |  

  203. Liu, L., C.F. Lo, T.S. Kang, F. Ren and S.J. Pearton ety al., 2011. Comparison of DC performance of Pt/Ti/Au-and Ni/Au-gated AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3607601.
    CrossRef  |  Direct Link  |  

  204. Lim, W., J.H. Jeong, H.B. Lee, J.H. Lee and S.B. Hur et al., 2011. Normally-off operation of recessed-gate AlGaN/GaN HFETs for high power applications. Electrochem. Solid-State Lett., 14: H205-H207.
    CrossRef  |  Direct Link  |  

  205. Lee, K.C., K.M. Jo, S.Y. Sung, J.H. Lee and J.J. Kim et al., 2011. Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3553205.
    CrossRef  |  Direct Link  |  

  206. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2011. Neutron doping effects in epitaxially laterally overgrown n-GaN. Applied Phys. Lett., Vol. 98. 10.1063/1.3593957.
    CrossRef  |  Direct Link  |  

  207. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2011. Deep electron and hole traps in neutron transmutation doped n-GaN. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3596571.
    CrossRef  |  Direct Link  |  

  208. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2011. Carrier removal rates and deep traps in neutron irradiated n-GaN films. J. Electrochem. Soc., 158: H866-H871.
    CrossRef  |  Direct Link  |  

  209. Lee, C., B.J. Kim, F. Ren, S.J. Pearton and J. Kim, 2011. Large-area suspended graphene on GaN nanopillars. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3654042.
    CrossRef  |  Direct Link  |  

  210. Kim, S.Y., S.Y. Sung, K.M. Jo, J.H. Lee and J.J. Kim et al., 2011. Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition. J. Crystal Growth, 326: 9-13.
    CrossRef  |  Direct Link  |  

  211. Kang, T.S., C.F. Lo, L. Liu, R. Finch and F. Ren et al., 2011. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates. 10.1116/1.3605298 .
    Direct Link  |  

  212. Jung, Y., J. Ahn, K.H. Baik, D. Kim, S.J. Pearton, F. Ren and J. Kim, 2011. Chemical etch characteristics of N-face and Ga-face GaN by phosphoric acid and potassium hydroxide solutions. J. Electrochem. Soc., 159: H117-H120.
    CrossRef  |  Direct Link  |  

  213. Johnson, J.L., A. Behnam, Y. An, S.J. Pearton and A. Ural, 2011. Experimental study of graphitic nanoribbon films for ammonia sensing. J. Applied Phys., Vol. 109. 10.1063/1.3597635.
    CrossRef  |  Direct Link  |  

  214. Hung, S.C., C.W. Chen, C.Y. Shieh, G.C. Chi, R. Fan and S.J. Pearton, 2011. High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature. Applied Phys. Lett., Vol. 98. 10.1063/1.3596440.
    CrossRef  |  Direct Link  |  

  215. Holzworth, M.R., N.G. Rudawski, S.J. Pearton, K.S. Jones and L. Lu et al., 2011. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor. Applied Phys. Lett., Vol. 98. 10.1063/1.3569715.
    CrossRef  |  Direct Link  |  

  216. Heo, Y.W., K.M. Cho, S.Y. Sun, S.Y. Kim and J.H. Lee et al., 2011. Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3556921.
    CrossRef  |  Direct Link  |  

  217. Fitch, R.C., D.E. Walker, K.D. Chabak, J.K. Gillespie and M. Kossler et al., 2011. Comparison of passivation layers for AlGaN/GaNHEMTs. J. Vacuum Sci. Technol. B, Vol. 29. .

  218. Douglas, E.A., S.J. Pearton, B. Poling, G.D. Via, L. Liu and F. Ren, 2011. Effect of drain bias on degradation of AlGaN/GaN high electron mobility transistors under X-Band operation. Electrochem. Solid-State Lett., 14: H464-H466.
    CrossRef  |  Direct Link  |  

  219. Douglas, E.A., F. Ren and S.J. Pearton, 2011. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3567183.
    CrossRef  |  Direct Link  |  

  220. Douglas, E.A., C.Y. Chang, D.J. Cheney, B.P. Gila and C.F. Lo et al., 2011. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress. Microelectron. Reliability, 51: 207-211.
    CrossRef  |  Direct Link  |  

  221. Douglas, E.A., A. Scheurmann, R.P. Davies, B.P. Gila and H. Cho et al., 2011. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy. Applied Phys. Lett., Vol. 98. 10.1063/1.3600340.
    CrossRef  |  Direct Link  |  

  222. Chu, B.H., J. Nicolosi, C.F. Lo, W. Strupinski, S.J. Pearton and F. Ren, 2011. Effect of coated platinum thickness on hydrogen detection sensitivity of graphene-based sensors. Electrochem. Solid-State Lett., 14: K43-K45.
    CrossRef  |  Direct Link  |  

  223. Chu, B.H., C.Y. Chang, K. Kroll, N. Denslow and Y.L. Wang et al., 2011. Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors. Phys. Status Solidi C, 8: 2486-2488.
    CrossRef  |  Direct Link  |  

  224. Chu, B.H., C.F. Lo, J. Nicolosi, C.Y. Chang and V. Chen et al., 2011. Hydrogen detection using platinum coated graphene grown on SiC. Sens. Actuat. B: Chem., 157: 500-503.
    CrossRef  |  Direct Link  |  

  225. Choi, K.H., S.H. Lee, J.H. Park, K.Y. Sohn, J.W. Lee and S.J. Pearton, 2011. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas. J. Vacuum Sci. Technol. B, Vol. 29. 10.1116/1.3574369.
    CrossRef  |  Direct Link  |  

  226. Cho, H., E.A. Douglas, A. Scheurmann, B.P. Gila and V. Craciun et al., 2011. Al2O3/InGaZnO4 heterojunction band offsets by X-ray photoelectron spectroscopy. Electrochem. Solid-State Lett., 14: H431-H433.
    CrossRef  |  Direct Link  |  

  227. Chen, C.W., S.C. Hung, M.D. Yang, C.W. Yeh and C.H. Wu et al., 2011. Oxygen sensors made by monolayer graphene under room temperature. Applied Phys. Lett., Vol. 99. 10.1063/1.3668105.
    CrossRef  |  Direct Link  |  

  228. Chang, C.Y., E.A. Douglas, J. Kim, L. Lu and C.F. Lo et al., 2011. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors. IEEE Trans. Device Mater. Reliability, 11: 187-193.
    CrossRef  |  Direct Link  |  

  229. Zhou, L., C.Y. Chang, S.J. Pearton, F. Ren, A. Dabiran and D.J. Smith, 2010. TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures. J. Applied Phys., Vol. 108. 10.1063/1.3501106.
    CrossRef  |  

  230. Wright, J.S., W. Lim, D.P. Norton, S.J. Pearton, F. Ren, J.L. Johnson and A. Ural, 2010. Nitride and oxide semiconductor nanostructured hydrogen gas sensors. Semiconductor Sci. Technol., Vol. 25. 10.1088/0268-1242/25/2/024002.
    CrossRef  |  

  231. Wang, Y.L., F. Ren, W. Lim, S.J. Pearton and K.H. Baik et al., 2010. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes. Curr. Applied Phys., 10: 1029-1032.
    CrossRef  |  Direct Link  |  

  232. Wang, Y.L., C.Y. Chang, W. Lim, S.J. Pearton and D.P. Norton et al., 2010. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B, Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3368467.
    CrossRef  |  

  233. Wang, Y.L., B.H. Chu, C.Y. Chang, C.F. Lo and S.J. Pearton et al., 2010. Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors. Sensors Actuators B: Chem., 146: 349-352.
    CrossRef  |  Direct Link  |  

  234. Sung, S.Y., S.Y. Kim, K.M. Jo, J.H. Lee and J.J. Kim et al., 2010. Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature. Applied Physics Lett., Vol. 97. 10.1063/1.3521310.
    CrossRef  |  

  235. Sung, S.Y., J.H. Choi, U.B. Han, K.C. Lee and J.H. Lee et al., 2010. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors. Applied Phys. Lett., Vol. 96. 10.1063/1.3357431.
    CrossRef  |  

  236. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, N.G. Kolin and D.I. Merkurisov et al., 2010. Neutron transmutation doping effects in GaN. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3431083.
    CrossRef  |  

  237. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and A.M. Dabiran et al., 2010. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy. J. Applied Phys., Vol. 107. 10.1063/1.3285408.
    CrossRef  |  

  238. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and A.I. Belogorokhov et al., 2010. Shallow and deep centers in as-grown and annealed MgZnO/ZnO structures with quantum wells. J. Electron. Mater., 39: 601-607.
    CrossRef  |  Direct Link  |  

  239. Polyakov, A.Y., A.V. Markov, M.V. Mezhennyi, A.A. Donskov and S.S. Malakhov et al., 2010. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3491187.
    CrossRef  |  

  240. Polyakov, A.Y., A.V. Markov, M.P. Duhnovsky, M.V. Mezhennyi and A.A. Donskov et al., 2010. GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3488616.
    CrossRef  |  

  241. Polyakov, A., A. Govorkov, N. Smirnov, A. Markov and I.H. Lee et al., 2010. Laterally overgrown GaN/InGaN multi‐quantum well heterostructures: Electrical and optical properties. Phys. Status Solidi, 207: 1383-1385.
    CrossRef  |  Direct Link  |  

  242. Pearton, S.J., F. Ren, Y.L. Wang, B.H. Chu and K.H. Chen et al., 2010. Recent advances in wide bandgap semiconductor biological and gas sensors. Progress Mater. Sci., 55: 1-59.
    CrossRef  |  Direct Link  |  

  243. Pearton, S.J. and A.Y. Polyakov, 2010. Role of hydrogen in the CVD of wide bandgap nitride semiconductors. Chem. Vapor Deposition, 16: 266-274.
    CrossRef  |  Direct Link  |  

  244. Park, Y.H., J.K. Kim, J.H. Lee, Y.W. Joo, H.S. Noh, J.W. Lee and S.J. Pearton, 2010. N2 effect on GaAs etching at 150 mTorr capacitively-coupled Cl2/N2 plasma. Microelectronic Eng., 87: 548-552.
    CrossRef  |  Direct Link  |  

  245. Park, J.H., S.H. Lee, K.H. Choi, H.S. Noh, J.W. Lee and S.J. Pearton, 2010. Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma. Thin Solid Films, 518: 6465-6468.
    CrossRef  |  Direct Link  |  

  246. Lo, C.F., T.S. Kang, L. Liu, C.Y. Chang and S.J. Pearton et al., 2010. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure. Applied Phys. Lett., Vol. 97. 10.1063/1.3533381.
    CrossRef  |  

  247. Lo, C.F., C.Y. Chang, S.J. Pearton, I.I. Kravchenko and A.M. Dabiran et al., 2010. Passivation of Al N/ Ga N high electron mobility transistor using ozone treatment. J. Vacuum Sci. Technol. B, Vol. 28. 10.1116/1.3271333.
    CrossRef  |  

  248. Lo, C.F., C.Y. Chang, B.H. Chu, S.J. Pearton, A. Dabiran, P.P. Chow and F. Ren, 2010. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors. Applied Phys. Lett., Vol. 96. 10.1063/1.3454279.
    CrossRef  |  

  249. Lo, C.F., C.Y. Chang, B.H. Chu, H.Y. Kim and J. Kim et al., 2010. Proton irradiation effects on AlN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3482335.
    CrossRef  |  

  250. Lim, W., J.H. Jeong, J.H. Lee, S.B. Hur and J.K. Ryu et al., 2010. Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes. Applied Phys. Lett., Vol. 97. 10.1063/1.3525931.
    CrossRef  |  

  251. Lim, W., E.A. Douglas, D.P. Norton, S.J. Pearton and F. Ren et al., 2010. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates. Applied Phys. Lett., Vol. 96. 10.1063/1.3309753.
    CrossRef  |  

  252. Lim, W., E.A. Douglas, D.P. Norton, S.J. Pearton and F. Ren et al., 2010. Improvement in bias stability of amorphous-In GaZnO4 thin film transistors with SiOx passivation layers. J. Vacuum Sci. Technol. B, Vol. 28. 10.1116/1.3276774.
    CrossRef  |  

  253. Lee, J.W., H.S. Noh, S.H. Lee, J.H. Park, K.H. Choi and S.J. Pearton, 2010. Dry etching process of GaAs in capacitively coupled BCl3-based plasmas. Thin Solid Films, 518: 6488-6491.
    CrossRef  |  Direct Link  |  

  254. Ko, G., H.Y. Kim, F. Ren, S.J. Pearton and J. Kim, 2010. Electrical characterization of 5 MeV proton-irradiated few layer graphene. Electrochem. Solid-State Lett., 13: K32-K34.
    CrossRef  |  Direct Link  |  

  255. Kim, J.K., J.H. Lee, Y.W. Joo, Y.H. Park, H.S. Noh, J.W. Lee and S.J. Pearton, 2010. Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas. Curr. Applied Phys., 10: 416-418.
    CrossRef  |  Direct Link  |  

  256. Khanna, R., E.A. Douglas, D.P. Norton, S.J. Pearton and F. Ren, 2010. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3467507.
    CrossRef  |  

  257. Jung, Y., K.H. Baik, F. Ren, S.J. Pearton and J. Kim, 2010. Effects of photoelectrochemical etching of N-polar and Ga-polar gallium nitride on sapphire substrates. J. Electrochem. Soc., 157: H676-H678.
    CrossRef  |  Direct Link  |  

  258. Johnson, J.L., A. Behnam, S.J. Pearton and A. Ural, 2010. Hydrogen sensing using pd‐functionalized multi‐layer graphene nanoribbon networks. Adv. Mater., 22: 4877-4880.
    CrossRef  |  Direct Link  |  

  259. Hung, S.C., O.A. Nafday, J.R. Haaheim, F. Ren, G.C. Chi and S.J. Pearton, 2010. Dip pen nanolithography of conductive silver traces. J. Phys. Chem. C, 114: 9672-9677.
    CrossRef  |  Direct Link  |  

  260. Heo, Y.W., S.J. Pearton and D.P. Norton, 2010. Size-dependent UV photosensitivity of indium zinc oxide. J. Nanoelectronics Optoelectronics, 5: 143-146.
    CrossRef  |  Direct Link  |  

  261. Davies, R.P., B.P. Gila, C.R. Abernathy, S.J. Pearton and C.J. Stanton, 2010. Defect-enhanced ferromagnetism in Gd-and Si-coimplanted GaN. Applied Phys. Lett., Vol. 96. 10.1063/1.3437085.
    CrossRef  |  

  262. Chu, M.H., S.Y. Kim, S.Y. Sung, J.H. Lee and J.J. Kim et al., 2010. Catalyst-free patterned growth of well-aligned ZnO Nanowires on ITO substrates using an aqueous solution method and lithography process. J. Nanoelectronics Optoelectronics, 5: 186-190.
    CrossRef  |  

  263. Chu, B.H., Y.L. Wang, H.T. Wang, C.Y. Chang and C.F. Lo et al., 2010. AlGaN/GaN high electron mobility transistor based sensors for environmental and bio-applications. Nanosci. Nanotechnol. Lett., 2: 120-128.
    CrossRef  |  Direct Link  |  

  264. Chu, B.H., H.W. Lin, S. Gwo, Y.L. Wang and S.J. Pearton et al., 2010. Chloride ion detection by InN gated Al Ga N∕ Ga N high electron mobility transistors. J. Vacuum Sci. Technol. B, Vol. 28. 10.1116/1.3271253.
    CrossRef  |  

  265. Chu, B.H., C.Y. Chang, K. Kroll, N. Denslow and Y.L. Wang et al., 2010. Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 96. 10.1063/1.3279159.
    CrossRef  |  

  266. Chu, B.H., B.S. Kang, S.C. Hung, K.H. Chen and F. Ren et al., 2010. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. J. Diabetes Sci. Technol., 4: 171-179.
    CrossRef  |  

  267. Chu, B.H., B.S. Kang, C.Y. Chang, F. Ren and A. Goh et al., 2010. Wireless detection system for glucose and pH sensing in exhaled breath condensate using AlGaN/GaN high electron mobility transistors. IEEE Sensors J., 10: 64-70.
    CrossRef  |  

  268. Chen, K.H., C.Y. Chang, L.C. Leu, C.F. Lo, B.H. Chu, S.J. Pearton and F. Ren, 2010. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during DC stressing and thermal storage. J. Vacuum Sci. Technol. B, Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3359603.
    CrossRef  |  

  269. Chen, C.W., C.J. Pan, F.C. Tsao, Y.L. Liu and C.W. Kuo et al., 2010. Catalyst-free ZnO nanowires grown on a-plane GaN. Vacuum, 84: 803-806.
    CrossRef  |  Direct Link  |  

  270. Chang, C.Y., T. Anderson, J. Hite, L. Lu and C.F. Lo et al., 2010. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B Nanotechnol. Microelectronics, Vol. 28. 10.1116/1.3491038.
    CrossRef  |  

  271. Chang, C.Y., C.F. Lo, F. Ren, S.J. Pearton and I.I. Kravchenko et al., 2010. Normally‐on/off AlN/GaN high electron mobility transistors. Phys. Stat. Solidic, 7: 2415-2418.
    CrossRef  |  Direct Link  |  

  272. Buyanova, I.A., A. Murayama, T. Furuta, Y. Oka and D.P. Norton et al., 2010. Spin dynamics in ZnO-based materials. J. Superconductivity Novel Magnetism, 23: 161-165.
    CrossRef  |  Direct Link  |  

  273. Baik, K.H., Y.G. Seo, J. Kim, S.M. Hwang and W. Lim et al., 2010. Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates. J. Phys. D: Applied Phys., Vol. 43. 10.1088/0022-3727/43/29/295102.
    CrossRef  |  

  274. Yakimov, E.B., P.S. Vergeles, A.V. Govorkov, A.Y. Polyakov and N.B. Smirnov et al., 2009. EBIC investigations of defect distribution in ELOG GaN films. Phys. B: Condensed Matter, 404: 4916-4918.
    CrossRef  |  Direct Link  |  

  275. Yakimov, E.B., P.S. Vergeles, A.V. Govorkov, A.Y. Polyakov and N.B. Smirnov et al., 2009. EBIC and CL studies of ELOG GaN films. Superlattices Microstructures, 45: 308-313.
    CrossRef  |  Direct Link  |  

  276. Wright, J.S., W. Lim, B.P. Gila, S.J. Pearton and J.L. Johnson et al., 2009. Hydrogen sensing with Pt-functionalized GaN nanowires. Sensors Actuators B: Chem., 140: 196-199.
    CrossRef  |  Direct Link  |  

  277. Wright, J.S., W. Lim, B.P. Gila, S.J. Pearton and F. Ren et al., 2009. Pd-catalyzed hydrogen sensing with InN nanobelts. J. Vacuum Sci. Technol. B, 27: L8-L10.
    CrossRef  |  Direct Link  |  

  278. Wang, Y.L., F. Ren, U. Zhang, Q. Sun and C.D. Yerino, 2009. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Appl. Phys. Lett., Vol 94 10.1063/1.3148369.
    CrossRef  |  Direct Link  |  

  279. Wang, Y.L., F. Ren, U. Zhang, Q. Sun and C.D. Yerino et al., 2009. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Appl. Phys. Lett., Vol 94 10.1063/1.3148369.
    CrossRef  |  Direct Link  |  

  280. Wang, Y.L., B.H. Chu, K.H. Chen, C.Y. Chang and T.P. Lele et al., 2009. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett., Vol. 94 10.1063/1.3153130.
    CrossRef  |  Direct Link  |  

  281. Wang, Y.L., B.H. Chu, C.Y. Chang, K.H. Chen and Y. Zhang, 2009. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes. Sensors Actuators B: Chem., 142: 175-178.
    CrossRef  |  Direct Link  |  

  282. Wang, X.J., L.S. Vlasenko, S.J. Pearton, W.M. Chen and I.A. Buyanova, 2009. Oxygen and zinc vacancies in as-grown ZnO single crystals. J. Phys. D Appl. Phys., Vol. 42 .
    Direct Link  |  

  283. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and H.S. Kim et al., 2009. Persistent photoconductivity in MgZnO alloys. Semiconductors, 43: 577-580.
    CrossRef  |  Direct Link  |  

  284. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and A.M. Dabiran et al., 2009. Comparison of electrical properties and deep traps in p-AlxGa1xN grown by molecular beam epitaxy and metal organic chemical vapor deposition. J. Appl. Phys., Vol 106 10.1063/1.3238508.
    CrossRef  |  Direct Link  |  

  285. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and E.A. Kozhukhova et al., 2009. Alpha particle detection with GaN Schottky diodes. J. Applied Phys., Vol. 106. 10.1063/1.3261806.
    CrossRef  |  

  286. Polyakov, A.Y., A.V. Markov, M.V. Mezhennyi, A.V. Govorkov, V.F. Pavlov et al., 2009. Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask. Appl. Phy. Lett., Vol 94 10.1063/1.3072614.
    CrossRef  |  Direct Link  |  

  287. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, A.V. Markov and I.H. Lee et al., 2009. Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth. J. Appl. Phys., Vol 105 10.1063/1.3153967.
    CrossRef  |  Direct Link  |  

  288. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, A.V. Markov and I.H. Lee et al., 2009. Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth. Appl. Phys. Lett., Vol 94 10.1063/1.3115807.
    CrossRef  |  Direct Link  |  

  289. Pan, C.J., J.Y. Chen, G.C. Chi, B.W. Chou, B.J. Pong et al., 2009. Optical investigation of nitrogen ion implanted bulk ZnO. Vacuum, 83: 1073-1075.
    CrossRef  |  Direct Link  |  

  290. Pan, C.J., C.W. Chen, J.Y. Chen, P.J. Huang and G.C. Chi et al., 2009. Optical and structural properties of Eu-diffused and doped ZnO nanowires. Appl. Surf. Sci., 256: 187-190.
    CrossRef  |  Direct Link  |  

  291. Lugo, F.J., H.S. Kim, S.J. Pearton, C.R. Abernathy and B.P. Gila et al., 2009. Rectifying ZnO: Ag∕ ZnO: Ga Thin-Film Junctions. Electroch. Solid-State Lett., 12: 188-190.
    CrossRef  |  Direct Link  |  

  292. Lo, C.F., H.Y. Kim, J. Kim, S.H. Chen and S.Y. Wang et al., 2009. Proton irradiation effects on Sb-based heterojunction bipolar transistors. J. Vacuum Sci. Technol. B, Vol. 27. 10.1116/1.3246405.
    CrossRef  |  

  293. Lin, Y., E. Flitsyian, L. Chernyak, T. Malinauskas and R. Aleksiejunas et al., 2009. Optical and electron beam studies of carrier transport in quasibulk GaN. Appl. Phys. Lett., Vol 95 10.1063/1.3220062.
    CrossRef  |  Direct Link  |  

  294. Lim, W., J.H. Jang, S.H. Kim, D.P. Norton and V. Craciun et al., 2009. Interface dependent electrical properties of amorphous InGaZnO4thin film transistors. J. Vacuum Sci. Technol. B: Microel. Nanometer Struct. Process. Measur. Phenom., 27: 126-129.

  295. Lim, W., E.A. Douglas, J. Lee, J. Jang, V. Craciun, D.P. Norton and S.J. Pearton, 2009. Transparent dual-gate InGaZnO thin film transistors: OR gate operation. J. Vacuum Sci. Technol. B, 27: 2128-2131.
    CrossRef  |  Direct Link  |  

  296. Lee, J.W., J.K. Kim, J.H. Lee, Y.W. Joo and Y.H. Park et al., 2009. Dry etching of GaAs in high pressure, capacitively coupled BCl3∕N2 plasmas. J. Vacuum Sci. Technol. B, 27: 681-683.
    CrossRef  |  Direct Link  |  

  297. Lan, Y.L., H.C. Lin, H.H. Liu, G.Y. Lee, F. Ren, 2009. Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type ohmic contact to AlGaN/GaN heterostructures. Appl. Phys. Lett., Vol 94 10.1063/1.3155195.
    CrossRef  |  Direct Link  |  

  298. Kim, H.Y., F. Ren, S.J. Pearton and J. Kim, 2009. Self-Annealing in Neutron-Irradiated AlGaN ∕ GaN high electron mobility transistors. Electrochem. Solid-State Lett., 12: 173-175.
    CrossRef  |  Direct Link  |  

  299. Johnson, J.L., Y. Choi, A. Ural, W. Lim, J.S. Wright, 2009. Growth and characterization of GaN nanowires for hydrogen sensors. J. Electron. Mater., 38: 490-494.
    CrossRef  |  Direct Link  |  

  300. Jang, J.H., S.Y. Son, W. Lim, M.S. Phen, K. Siebein, S.J. Pearton and V. Craciun, 2009. Fabrication of compositional graded Si 1− x Ge x layers by using thermal oxidation. Appl. Phys. Lett., Vol 94 10.1063/1.3139070.
    CrossRef  |  Direct Link  |  

  301. Hung, S.C., P.J. Huang, C.E. Chan, W.Y. Uen and F. Ren et al., 2009. Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition. Appl. Surface Sci., 255: 6809-6813.
    CrossRef  |  Direct Link  |  

  302. Huang, P.J., C.W. Chen, J.Y. Chen, G.C. Chi and C.J. Pan et al., 2009. Optical and structural properties of Mg-ion implanted GaN nanowires. Vacuum 83: 797-800.
    CrossRef  |  Direct Link  |  

  303. Herrero, A.M., B.P. Gila, A. Gerger, A. Scheuermann and R. Davies et al., 2009. Environmental stability of candidate dielectrics for GaN-based device applications. J. Appl. Phys., Vol 106 10.1063/1.3236568.
    CrossRef  |  Direct Link  |  

  304. Han, S.Y., J.L. Lee and S.J. Pearton, 2009. Electrical properties of nanoscale Au contacts on 4H-SiC. J. Vacuum Sci. Technol. B, 27: 1870-1873.
    CrossRef  |  Direct Link  |  

  305. Davies, R.P., C.R. Abernathy, S.J. Pearton, D.P. Norton, M.P. Ivill and F. Ren, 2009. Review of recent advances in transition and lanthanide metal–doped GaN and ZnO. Chem. Eng. Commun., 196: 1030-1053.
    CrossRef  |  Direct Link  |  

  306. Chu, B.H., J. Lee, C.Y. Chang, P. Jiang and Y. Tseng, 2009. The study of low temperature hydrothermal growth of ZnO nanorods on stents and its applications of cell adhesion and viability. Appl. Surface Sci., 255: 8309-8312.
    CrossRef  |  Direct Link  |  

  307. Chen, K.H., W. Wu, B.H. Chu, C.Y. Chang, J. Lin, 2009. UV excimer laser drilled high aspect ratio submicron via hole. Appl. Surf. Sci., 256: 183-186.
    CrossRef  |  Direct Link  |  

  308. Chen, K.H., W. Wu, B.H. Chu, C.F. Lo and J. Lin et al., 2009. 190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole. J. Vacuum Sci. Technol. B, Vol. 27. 10.1116/1.3253389.
    CrossRef  |  

  309. Chen, K.H., F. Ren, A. Pais, H. Xie, B.P. Gila, J.W. Johnson, P. Rajagopal et al. 2009. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si. J. Vac. Sci. Technol. B, 27: 2166-2169.
    CrossRef  |  Direct Link  |  

  310. Chen, J.Y., C.J. Pan, F.C. Tsao, C.H. Kuo and G.C. Chi et al., 2009. Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst. Vacuum, 83: 1076-1079.
    CrossRef  |  Direct Link  |  

  311. Chang, C.Y., Y.L. Wang, B.P. Gila, A.P. Gerger and S.J. Pearton et al., 2009. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. Appl. Phys. Lett., Vol. 95: 10.1063/1.3216576.
    CrossRef  |  Direct Link  |  

  312. Chang, C.Y., Y.L. Wang, B.P. Gila, A.P. Gerger and S.J. Pearton et al., 2009. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. Appl. Phys. Lett., Appl. Phys. Lett., Vol 95 10.1063/1.3216576.
    CrossRef  |  Direct Link  |  

  313. Chang, C.Y., S.J. Pearton, C.F. Lo, F. Ren and I.I. Kravchenko et al., 2009. Development of enhancement mode AlN/GaN high electron mobility transistors. Appl. Phys. Lett., Vol 94 10.1063/1.3168648.
    CrossRef  |  Direct Link  |  

  314. Baik, K.H. and S.J. Pearton, 2009. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication. Appl. Surface Sci., 255: 5948-5951.
    CrossRef  |  Direct Link  |  

  315. Anderson, T., F. Ren, S. Pearton, B.S. Kang and H.T. Wang et al., 2009. Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices. Sensors, 9: 4669-4694.
    Direct Link  |  

  316. Yu, X., C. Li, Z.N. Low, J. Lin and T.J. Anderson et al., 2008. Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors. Sensors Actuators B: Chem., 135: 188-194.
    CrossRef  |  Direct Link  |  

  317. Yakimov, E.B., P.S. Vergeles, A.Y. Polyakov, N.B. Smirnov and A.V. Govorkov et al., 2008. Donor nonuniformity in undoped and Si doped n-Ga N prepared by epitaxial lateral overgrowth. Applied Phys. Lett., Vol. 92. 10.1063/1.2840190.
    CrossRef  |  Direct Link  |  

  318. Wang, Y.L., L.N. Covert, T.J. Anderson, W. Lim and J. Lin et al., 2008. RF characteristics of room-temperature-deposited, small gate dimension indium zinc oxide TFTs. Electrochem. Solid-State Lett., 11: H60-H62.
    CrossRef  |  Direct Link  |  

  319. Wang, Y.L., H.S. Kim, D.P. Norton, S.J. Pearton and F. Ren, 2008. Hydrogen effects on the optical and electrical properties of ZnO light-emitting diodes. Electrochem. Solid-State Lett., 11: H88-H91.
    CrossRef  |  Direct Link  |  

  320. Wang, Y.L., H.S. Kim, D.P. Norton, S.J. Pearton and F. Ren, 2008. Dielectric passivation effects on ZnO light emitting diodes. Applied Phys. Lett., Vol. 92. 10.1063/1.2898709.
    CrossRef  |  Direct Link  |  

  321. Wang, Y.L., F. Ren, H.S. Kim, D.P. Norton and S.J. Pearton, 2008. Materials and process development for ZnMgO/ZnO light-emitting diodes. IEEE J. Select. Top. Quantum Elect., 14: 1048-1052.
    CrossRef  |  Direct Link  |  

  322. Wang, Y.L., B.H. Chu, K.H. Chen, C.Y. Chang and T.P. Lele et al., 2008. Botulinum toxin detection using Al Ga N∕ Ga N high electron mobility transistors. Appl. Phys. Lett., Vol 93 10.1063/1.3056612.
    CrossRef  |  Direct Link  |  

  323. Wang, H.T., O.A. Nafday, J.R. Haaheim, E. Tevaarwerk and N.A. Amro et al., 2008. Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks. Applied Phys. Lett., Vol. 93. .

  324. Voss, L.F., L. Stafford, M. Hlad, B.P. Gila and C.R. Abernathy et al., 2008. High temperature Ohmic contacts to p‐type GaN for use in light emitting applications. Phys. Status Solidi C, 5: 2241-2243.
    CrossRef  |  Direct Link  |  

  325. Voss, L.F., L. Stafford, B.P. Gila, S.J. Pearton and F. Ren, 2008. Ir-based diffusion barriers for Ohmic contacts to p-GaN. Applied Surface Sci., 254: 4134-4138.
    CrossRef  |  Direct Link  |  

  326. Tsao, F.C., J.Y. Chen, C.H. Kuo, G.C. Chi and C.J. Pan et al., 2008. Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001). Applied Phys. Lett., Vol. 92. 10.1063/1.2936090.
    CrossRef  |  Direct Link  |  

  327. Tien, L.C., S.J. Pearton, D.P. Norton and F. Ren, 2008. Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition. J. Mater. Sci., 43: 6925-6932.
    CrossRef  |  Direct Link  |  

  328. Tien, L.C., S.J. Pearton, D.P. Norton and F. Ren, 2008. Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition. Applied Phys. A, 91: 29-32.
    CrossRef  |  Direct Link  |  

  329. Stewart, A.D., A. Gerger, B.P. Gila, C.R. Abernathy and S.J. Pearton, 2008. Determination of Sm2O3∕Ga As heterojunction band offsets by x-ray photoelectron spectroscopy. Applied Phys. Lett., Vol. 92. 10.1063/1.2911726.
    CrossRef  |  Direct Link  |  

  330. Stafford, L., W.T. Lim, S.J. Pearton, J.I. Song and J.S. Park et al., 2008. Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H2 plasmas. Thin Solid Films, 516: 2869-2873.
    CrossRef  |  Direct Link  |  

  331. Shul, R.J., M.E. Overberg, A.G. Baca, M. Martinez and M. Armendariz et al., 2008. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices. J. Vac. Sci. Technol., Vol. 26. 10.1116/1.2837849.
    CrossRef  |  Direct Link  |  

  332. Shen, K.H., B.S. Kang, H.T. Wang, T.P. Lele and F. Ren et al., 2008. C-erB-2 sensing using AlGaN/GaN HEMTs for breast cancer detection. Applied Phys. Lett., Vol. 92. .

  333. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, T.G. Yugova and A.V. Markov et al., 2008. Electrical properties of GaN (Fe) buffers for Al Ga N∕ Ga N high electron mobility transistor structures. Applied Phys. Lett., Vol. 92. 10.1063/1.2838734.
    CrossRef  |  Direct Link  |  

  334. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, I.H. Lee and J.H. Baek et al., 2008. Electron irradiation effects in GaN∕ InGaN multiple quantum well structures. J. Electrochem. Soc., 155: H31-H35.
    CrossRef  |  Direct Link  |  

  335. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and A.I. Belogorokhov et al., 2008. Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition. J. Applied Phys., Vol. 103. 10.1063/1.2906180.
    CrossRef  |  Direct Link  |  

  336. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and T.G. Yugova et al., 2008. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions. J. Applied Phys., Vol. 104. 10.1063/1.2973463.
    CrossRef  |  Direct Link  |  

  337. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton et al., 2008. Electron irradiation of Al Ga N∕Ga N and Al N∕Ga N heterojunctions. Applied Phys. Lett., VOl. 93. 10.1063/1.3000613.
    CrossRef  |  Direct Link  |  

  338. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and E.B. Yakimov et al., 2008. Effects of laterally overgrown n-Ga N thickness on defect and deep level concentrations. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 26. .

  339. Pearton, S.J., W.T. Lim, J.S. Wright, L.C. Tien and H.S. Kim et al., 2008. ZnO and related materials for sensors and light-emitting diodes. J. Elect. Mater., 37: 1426-1432.
    CrossRef  |  Direct Link  |  

  340. Pearton, S.J., W. Lim, Y.L. Wang, K. Shoo and D.P. Norton et al., 2008. Key transparent thin film transistors based on IZO for flexible electronics. Eng. Mater.: Innovat. Mater. Sci., Vol. 380. .

  341. Pearton, S.J., D.P. Norton, L.C. Tien and J. Guo, 2008. Modeling and fabrication of ZnO nanowire transistors. IEEE Trans. Electron Dev., 55: 3012-3019.
    CrossRef  |  Direct Link  |  

  342. Pearton, S.J., B.S. Kang, B.P. Gila, D.P. Norton and O. Kryliouk et al., 2008. GaN, ZnO and InN nanowires and devices. J. Nanosci. Nanotechnol., 8: 99-110.
    Direct Link  |  

  343. Pearton, S.J. and A.Y. Polyakov, 2008. Effects of radiation damage in GaN and related materials. Int. J. Mater. Struct. Integr., Vol. 2. 10.1504/IJMSI.2008.018902.
    CrossRef  |  Direct Link  |  

  344. Lim, W.T., P.W. Sadik, D.P. Norton, B.P. Gila, S.J. Pearton, I.I. Kravchenko and F. Ren, 2008. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2. Applied Surface Sci., 254: 5211-5215.
    Direct Link  |  

  345. Lim, W.T., P.W. Sadik, D.P. Norton, B.P. Gila, S.J. Pearton, I.I. Kravchenko and F. Ren, 2008. Ir diffusion barriers in Ni/Au ohmic contacts to p-type CuCrO2. J. Elect. Mater., 37: 161-166.
    CrossRef  |  Direct Link  |  

  346. Lim, W., Y.L. Wang, F. Ren, D.P. Norton, I.I. Kravchenko, J.M. Zavada and S.J. Pearton, 2008. Indium zinc oxide thin films deposited by sputtering at room temperature. Applied Surface Sci., 254: 2878-2881.
    CrossRef  |  Direct Link  |  

  347. Lim, W., V. Craciun, K. Siebein, B.P. Gila, D.P. Norton, S.J. Pearton and F. Ren, 2008. Surface and bulk thermal annealing effects on ZnO crystals. Applied Surface Sci., 254: 2396-2400.
    CrossRef  |  Direct Link  |  

  348. Lim, W., S.H. Kim, Y.L. Wang, J.W. Lee and D.P. Norton et al., 2008. Stable room temperature deposited amorphous in Ga Zn O 4 thin film transistors. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 26. 10.1116/1.2917075.
    CrossRef  |  Direct Link  |  

  349. Lim, W., S. Kim, Y.L. Wang, J.W. Lee and D.P. Norton et al., 2008. High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering. J. Electrochem. Soc., 155: H383-H385.
    CrossRef  |  Direct Link  |  

  350. Lim, W., J.S. Wright, B.P. Gila, S.J. Pearton and F. Ren et al., 2008. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts. Appl. Phy. Lett., Vol 93 10.1063/1.3033548.
    CrossRef  |  Direct Link  |  

  351. Lim, W., J.S. Wright, B.P. Gila, J.L. Johnson and A. Ural et al., 2008. Room temperature hydrogen detection using Pd-coated GaN nanowires. Applied Phys. Lett., Vol. 93. 10.1063/1.2975173.
    CrossRef  |  Direct Link  |  

  352. Lim, W., J.H. Jang, S.H. Kim, D.P. Norton and V. Craciun et al., 2008. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates. Applied Phys. Lett., Vol. 93. 10.1063/1.2975959.
    CrossRef  |  Direct Link  |  

  353. Lim, W., E.A. Douglas, S.H. Kim, D.P. Norton, S.J. Pearton, 2008. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape. Appl. Phys. Lett., Vol 93 10.1063/1.3054167.
    CrossRef  |  Direct Link  |  

  354. Lim, W., D.P. Norton, S.J. Pearton, X.J. Wang and W.M. Chen et al. 2008. Migration and luminescence enhancement effects of deuterium in Zn O∕ Zn Cd O quantum wells. Applied Phys. Lett., Vol. 91. 10.1063/1.2836946.
    CrossRef  |  Direct Link  |  

  355. Lim, W., D.P. Norton, J.H. Jang, V. Craciun, S.J. Pearton and F. Ren, 2008. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films. Applied Phys. Lett., Vol. 92. 10.1063/1.2902322.
    CrossRef  |  Direct Link  |  

  356. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton, 2008. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth. Thin Solid Films, 516: 2035-2040.
    CrossRef  |  Direct Link  |  

  357. Kim, H.Y., J. Kim, S.P. Yun, K.R. Kim, T.J. Anderson, F. Ren and S.J. Pearton, 2008. AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons. J. Electrochem. Soc., 155: H513-H515.
    CrossRef  |  Direct Link  |  

  358. Kim, H.S., S.J. Pearton, D.P. Norton and F. Ren, 2008. Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer. Applied Phys. A, 91: 255-259.
    CrossRef  |  Direct Link  |  

  359. Kim, H.S., J.M. Erie, S.J. Pearton, D.P. Norton and F. Ren, 2008. Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture. Applied Phys. A, 91: 251-254.
    CrossRef  |  Direct Link  |  

  360. Kim, H.S., F. Lugo, S.J. Pearton, D.P. Norton, Y.L. Wang and F. Ren, 2008. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition. Applied Phys. Lett., Vol. 92. 10.1063/1.2900711.
    CrossRef  |  Direct Link  |  

  361. Kim, H.S., F. Lugo, S.J. Pearton, D.P. Norton and F. Ren, 2008. The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition. Vacuum, 82: 1259-1263.
    CrossRef  |  Direct Link  |  

  362. Kim, H.S., F. Lugo, S.J. Pearton, D.P. Norton and F. Ren, 2008. Properties of post‐annealed ZnO films grown with O3. Phys. Status Solidi (A), 205: 1631-1635.
    CrossRef  |  Direct Link  |  

  363. Kim, H.S., F. Lugo, S.J. Pearton, D.P. Norton and F. Ren, 2008. Dependence of Zn 1-x Mgx O: P film properties on magnesium concentration. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 26. 10.1116/1.2917079.
    CrossRef  |  Direct Link  |  

  364. Khanna, R., L. Stafford, L.F. Voss, S.J. Pearton and H.T. Wang et al., 2008. Aging and stability of GaN high electron mobility transistors and light-emitting diodes with TiB2- and Ir-based contacts. IEEE Trans. Device Mater. Reliab., 8: 272-276.
    CrossRef  |  Direct Link  |  

  365. Kang, B.S., H.T. Wang, F. Ren, M. Hlad and B.P. Gila et al., 2008. Role of gate oxide in AlGaN/GaN high-electron-mobility transistor pH sensors. J. Elect. Mater., 37: 550-553.
    CrossRef  |  Direct Link  |  

  366. Kang, B.S., H.T. Wang, F. Ren, B.P. Gila and C.R. Abernathy et al., 2008. Exhaled-breath detection using AlGaN∕GaN high electron mobility transistors integrated with a peltier element. Electrochem. Solid-State Lett., 11: J19-J12.
    Direct Link  |  

  367. Kang, B.S., H.T. Wang, F. Ren and S.J. Pearton, 2008. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors. J. Applied Phys., Vol. 104. 10.1063/1.2959429.
    CrossRef  |  Direct Link  |  

  368. Jeong, B.S., S.J. Pearton, Y.W. Heo, D.P. Norton and A.F. Hebard, 2008. Hall effect in sputter-deposited CoxTi1-xO2-δ films. J. Magnet. Magnet. Mater., 320: 2376-2381.
    CrossRef  |  Direct Link  |  

  369. Ivill, M., S.J. Pearton, S. Rawal, L. Leu and P. Sadik et al., 2008. Structure and magnetism of cobalt-doped ZnO thin films. N. J. Phys., Vol. 10. 10.1088/1367-2630/10/6/065002.
    CrossRef  |  Direct Link  |  

  370. Hung, S.C., Y.L. Wang, B. Hicks, S.J. Pearton and F. Ren et al., 2008. Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection. Elect. Solid-State Lett., 11: H241-H244.
    CrossRef  |  Direct Link  |  

  371. Hung, S.C., Y.L. Wang, B. Hicks, S.J. Pearton and D.M. Dennis et al., 2008. Detection of chloride ions using an integrated Ag∕Ag Cl electrode with Al Ga N∕ Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 92. 10.1063/1.2927372.
    CrossRef  |  Direct Link  |  

  372. Hung, S.C., P.J. Huang, C.E. Chan, W.Y. Uen and F. Ren et al., 2008. Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition. Appl. Surface Sci., 255: 3016-3018.
    CrossRef  |  Direct Link  |  

  373. Hite, J.K., K.K. Allums, G.T. Thaler, C.R. Abernathy and S.J. Pearton et al., 2008. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN. N. J. Phys., Vol. 10. 10.1088/1367-2630/10/5/055005/meta.
    CrossRef  |  Direct Link  |  

  374. Erie, J.M., Y. Li, M. Ivill, H.S. Kim and S.J. Pearton et al., 2008. Properties of Zn3 N2-doped ZnO films deposited by pulsed laser deposition. Applied Surf. Sci., Vol. 254. .

  375. Erie, J.M., M. Ivill, H.S. Kim, S.J. Pearton, B. Gila, F. Ren and D.P. Norton, 2008. Acceptor state formation in arsenic‐doped ZnO films grown using ozone. Phys. Status Solidi (A), 205: 1647-1652.
    CrossRef  |  Direct Link  |  

  376. Donskov, A.A., L.I. D’yakonov, A.V. Govorkov, Y.P. Kozlova and S.S. Malakhov et al., 2008. Improved crystalline quality nonpolar a-Ga N films grown by hydride vapor phase epitaxy. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Measur., Phenom., 26: 1937-1941.
    CrossRef  |  Direct Link  |  

  377. Chu, B.H., L.C. Leu, C.Y. Chang, F. Lugo and D. Norton et al., 2008. Conformable coating of SiO 2 on hydrothermally grown ZnO nanorods. Appl. Phys. Lett., Vol 93 10.1063/1.3033407.
    CrossRef  |  Direct Link  |  

  378. Chu, B.H., B.S. Kang, F. Ren, C.Y. Chang and Y.L. Wang et al., 2008. Enzyme-based lactic acid detection using Al Ga N∕ Ga N high electron mobility transistors with ZnO nanorods grown on the gate region. Applied Phys. Lett., Vol. 93. 10.1063/1.2966158.
    CrossRef  |  Direct Link  |  

  379. Chen, W.M., I.A. Buyanova, A. Murayama, T. Furuta and Y. Oka et al., 2008. Dominant factors limiting efficiency of optical spin detection in ZnO-based materials. Applied Phys. Lett., Vol. 92. 10.1063/1.2885732.
    CrossRef  |  Direct Link  |  

  380. Chen, K.H., H.W. Wang, B.S. Kang, C.Y. Chang and Y.L. Wang et al., 2008. Low Hg (II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors. Sensors Actuat. B: Chem., 134: 386-389.
    CrossRef  |  Direct Link  |  

  381. Chen, J.Y., G.C. Chi, P.J. Huang, M.Y. Chen and S.C. Hung et al., 2008. Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy. Applied Phys. Lett., Vol. 92. 10.1063/1.2916708.
    CrossRef  |  Direct Link  |  

  382. Chang, C.Y., B.S. Kang, H.T. Wang, F. Ren and Y.L. Wang et al., 2008. CO2 detection using polyethylenimine/starch functionalized Al Ga N∕Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 92. 10.1063/1.2937126.
    CrossRef  |  Direct Link  |  

  383. Buyanova, I.A., X.J. Wang, G. Pozina, W.M. Chen and W. Lim et al., 2008. Effects of hydrogen on the optical properties of Zn Cd O∕ Zn O quantum wells grown by molecular beam epitaxy. Applied Phys. Lett., Vol. 92. 10.1063/1.2953178.
    CrossRef  |  Direct Link  |  

  384. Arjunan, A.C., D. Singh, H.T. Wang, F. Ren, P. Kumar, R.K. Singh and S.J. Pearton, 2008. Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing. Appl. Surface Sci., 255: 3085-3089.
    CrossRef  |  Direct Link  |  

  385. Anderson, T.J., H.T. Wang, B.S. Kang, F. Ren and S.J. Pearton et al., 2008. Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes. Appl. Surface Sci., 255: 2524-2526.
    CrossRef  |  Direct Link  |  

  386. Anderson, T.J., F. Ren, J. Kim, J. Lin and M. Hlad et al., 2008. Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates. J. Elect. Mater., 37: 384-387.
    CrossRef  |  Direct Link  |  

  387. Lim, W.T., P.W. Sadik, D.P. Norton, S.J. Pearton and F. Ren, 2008. Dry etching of CuCrO2 thin films. Applied Surface Sci., 254: 2359-2363.
    CrossRef  |  Direct Link  |  

  388. Zavada, J.M., N. Nepal, C. Ugolini, J.Y. Lin and H.X. Jiang et al., 2007. Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition. Applied Phys. Lett., Vol. 91. 10.1063/1.2767992.
    CrossRef  |  Direct Link  |  

  389. Yoon, Y., J. Lin, S.J. Pearton and J. Guo, 2007. Role of grain boundaries in ZnO nanowire field-effect transistors. J. Applied Phys., Vol. 101. 10.1063/1.2422747.
    CrossRef  |  Direct Link  |  

  390. Yakimov, E.B., P.S. Vergeles, A.Y. Polyakov, N.B. Smirnov and A.V. Govorkov et al., 2007. Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN. Applied Phys. Lett., Vol. 90. 10.1063/1.2722668.
    CrossRef  |  Direct Link  |  

  391. Wright, J.S., R. Khanna, L.F. Voss, L. Stafford and B.P. Gila et al., 2007. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO. Applied Surf. Sci., 253: 3766-3772.
    CrossRef  |  Direct Link  |  

  392. Wright, J.S., R. Khanna, L. Stafford, B.P. Gila and D.P. Norton et al., 2007. Ir∕ Au ohmic contacts on bulk, single-crystal n-type ZnO. J. Electrochem. Soc., 154: H161-H165.
    CrossRef  |  Direct Link  |  

  393. Wright, J.S., L. Stafford, B.P. Gila, D.P. Norton, S.J. Pearton, H.T. Wang and F. Ren, 2007. Effect of cryogenic temperature deposition of various metal contacts on bulk single-crystal n-type ZnO. J. Electron. Mater., 36: 488-493.
    CrossRef  |  Direct Link  |  

  394. Wang, Y.L., F. Ren, W. Lim, D.P. Norton, S.J. Pearton, I.I. Kravchenko and J.M. Zavada, 2007. Room temperature deposited indium zinc oxide thin film transistors. Applied Phys. Lett., Vol. 90. 10.1063/1.2746084.
    CrossRef  |  Direct Link  |  

  395. Wang, Y.L., F. Ren, H.S. Kim, S.J. Pearton and D.P. Norton, 2007. Incorporation and drift of hydrogen at low temperatures in ZnO. Applied Phys. Lett., Vol. 90. 10.1063/1.2711201.
    CrossRef  |  Direct Link  |  

  396. Wang, H.T., T.J. Anderson, B.S. Kang, F. Ren and C. Li et al., 2007. Stable hydrogen sensors from Al Ga N∕Ga N heterostructure diodes with Ti B2-based Ohmic contacts. Applied Phys. Lett., Vol. 90. 10.1063/1.2751107.
    CrossRef  |  Direct Link  |  

  397. Wang, H.T., B.S. Kang, T.F. Chancellor, T.P. Lele and Y. Tseng et al., 2007. Selective detection of Hg (II) ions from Cu (II) and Pb (II) using AlGaN∕ GaN high electron mobility transistors. Electrochem. Solid-State Lett., 10: J150-J153.
    CrossRef  |  Direct Link  |  

  398. Wang, H.T., B.S. Kang, T.F. Chancellor, Jr., T.P. Lele and Y. Tseng et al., 2007. Fast electrical detection of Hg (II) ions with Al Ga N∕ Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 91. 10.1063/1.2764554.
    CrossRef  |  Direct Link  |  

  399. Wang, H.T., B.S. Kang, F. Ren, S.J. Pearton and J.W. Johnson et al., 2007. Electrical detection of kidney injury molecule-1 with Al Ga N∕ Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 91. .
    Direct Link  |  

  400. Voss, L.F., L. Stafford, R. Khanna, B.P. Gila and C.R. Abernathy et al., 2007. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN. J. Elect. Mater., 36: 1662-1668.
    CrossRef  |  Direct Link  |  

  401. Voss, L.F., L. Stafford, R. Khanna, B.P. Gila and C.R. Abernathy et al., 2007. Ohmic contacts to p-type GaN based on TaN, TiN and ZrN. Applied Phys. Lett., Vol. 90. 10.1063/1.2742572.
    CrossRef  |  Direct Link  |  

  402. Voss, L.F., L. Stafford, J.S. Wright, S.J. Pearton, F. Ren and I.I. Kravchenko, 2007. W2B and Cr B2 diffusion barriers for Ni∕Au contacts to p-Ga N. Applied Phys. Lett., Vol. 91. 10.1063/1.2762280.
    CrossRef  |  Direct Link  |  

  403. Voss, L.F., L. Stafford, G.T. Thaler, C.R. Abernathy, S.J. Pearton, J.J. Chen and F. Ren, 2007. Annealing and measurement temperature dependence of W2B-and W2B5-based rectifying contacts to p-GaN. J. Electron. Mater., 36: 384-390.
    CrossRef  |  Direct Link  |  

  404. Tien, L.C., D.P. Norton, S.J. Pearton, H.T. Wang and F. Ren, 2007. Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy. Applied Surf. Sci., 253: 4620-4625.
    CrossRef  |  Direct Link  |  

  405. Tien, L.C., D.P. Norton, B.P. Gila, S.J. Pearton, H.T. Wang, B.S. Kang and F. Ren, 2007. Detection of hydrogen with SnO2-coated ZnO nanorods. Applied Surf. Sci., 253: 4748-4752.
    CrossRef  |  Direct Link  |  

  406. Thompson, A.V., C. Boutwell, J.W. Mares, W.V. Schoenfeld and A. Osinsky et al., 2007. Thermal stability of Cd Zn O∕ Zn O multi-quantum-wells. Applied Phys. Lett., Vol. 91. 10.1063/1.2812544.
    CrossRef  |  Direct Link  |  

  407. Stafford, L., W.T. Lim, S.J. Pearton, M. Chicoine and S. Gujrathi et al., 2007. Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers. J. Vacuum Sci. Technol. A: Vacuum, Surfaces Films, Vol. 25. 10.1116/1.2736679.
    CrossRef  |  Direct Link  |  

  408. Stafford, L., L.F. Voss, S.J. Pearton, H.T. Wang and F. Ren, 2007. Improved long-term thermal stability of in Ga N∕ Ga N multiple quantum well light-emitting diodes using Ti B 2-and Ir-based p-Ohmic contacts. Applied Phys. Lett., Vol. 90. 10.1063/1.2748306.
    CrossRef  |  Direct Link  |  

  409. Stafford, L., J. Margot, S. Delprat, M. Chaker and S.J. Pearton, 2007. Influence of redeposition on the plasma etching dynamics. J. Applied Phys., Vol. 101. 10.1063/1.2719015.
    CrossRef  |  Direct Link  |  

  410. Sadik, P.W., S.J. Pearton, D.P. Norton, E. Lambers and F. Ren, 2007. Functionalizing Zn-and O-terminated ZnO with thiols. J. Applied Phys., Vol. 101. 10.1063/1.2736893.
    CrossRef  |  Direct Link  |  

  411. Rosenberg, R.A., G.K. Shenoy, M.F. Chisholm, L.C. Tien, D. Norton and S. Pearton, 2007. Getting to the core of the problem: Origin of the luminescence from (Mg, Zn) O heterostructured nanowires. Nano Lett., 7: 1521-1525.
    CrossRef  |  Direct Link  |  

  412. Polyakov, A.Y., N.B. Smirnov, B.P. Gila, M. Hlad, A.P. Gerger, C.R. Abernathy and S.J. Pearton, 2007. Studies of Interface States in Sc2O3∕ GaN, MgO∕ GaN, and MgScO∕ GaN structures. J. Electrochem. Soc., 154: H115-H118.
    CrossRef  |  Direct Link  |  

  413. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, V.I. Vdovin and A.V. Markov et al., 2007. Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy. J. Vacuum Sci. Technol. B, 25: 686-690.
    CrossRef  |  Direct Link  |  

  414. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, K.D. Shcherbatchev and V.T. Bublik et al., 2007. Electrical, photoelectrical and luminescent properties of doped p-type GaN superlattices. J. Vacuum Sci. Technol. B, 25: 69-73.
    CrossRef  |  Direct Link  |  

  415. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and A.I. Belogorokhov et al., 2007. Electrical properties of ZnO (P) and ZnMgO (P) films grown by pulsed laser deposition. J. Electrochem. Soc., 154: H825-H829.
    Direct Link  |  

  416. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and T.G. Yugova et al., 2007. Semi-insulating, fe-doped buffer layers grown by molecular beam epitaxy. J. Electrochem. Soc., 154: H749-H754.
    CrossRef  |  Direct Link  |  

  417. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton et al., 2007. Fast neutron irradiation effects in n-Ga N. J. Vacuum Sci. Technol. B, 25: 436-442.
    CrossRef  |  Direct Link  |  

  418. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and E.B. Yakimov et al., 2007. Neutron radiation effects in epitaxially laterally overgrown GaN films. J. Elect. Mater., 36: 1320-1325.
    CrossRef  |  Direct Link  |  

  419. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and A.M. Dabiran et al., 2007. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕ GaN heterostructure transistors. Applied Phys. Lett., Vol. 91. 10.1063/1.2823607.
    CrossRef  |  Direct Link  |  

  420. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.I. Belogorokhov et al., 2007. Persistent photoconductivity in p-type ZnO (N) grown by molecular beam epitaxy. Applied Phys. Lett., Vol. 90. 10.1063/1.2717089.
    CrossRef  |  Direct Link  |  

  421. Polyakov, A.Y., N.B. Smirnov, A.I. Belogorokhov, A.V. Govorkov and E.A. Kozhukhova et al., 2007. Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 25. 10.1116/1.2790918.
    CrossRef  |  Direct Link  |  

  422. Pearton, S.J., T. Lele, Y. Tseng and F. Ren, 2007. Penetrating living cells using semiconductor nanowires. Trends Biotechnol., 25: 481-482.
    CrossRef  |  Direct Link  |  

  423. Pearton, S.J., D.P. Norton, M.P. Ivill, A.F. Hebard, J.M. Zavada, W.M. Chen and I.A. Buyanova, 2007. ZnO doped with transition metal ions. IEEE Trans. Electron Dev., 54: 1040-1048.
    CrossRef  |  Direct Link  |  

  424. Pearton, S.J., D.P. Norton, M.P. Ivill, A.F. Hebard, J.M. Zavada, W.M. Chen and I.A. Buyanova, 2007. Ferromagnetism in transition-metal doped ZnO. J. Electron. Mater., 36: 462-471.
    CrossRef  |  Direct Link  |  

  425. Pearton, S.J., D.P. Norton and F. Ren, 2007. The promise and perils of wide‐bandgap semiconductor nanowires for sensing, electronic and photonic applications. Small, 3: 1144-1150.
    CrossRef  |  Direct Link  |  

  426. Pearton, S.J., B. Kang, L. Tien, D.P. Norton, Y.W. Heo and F. Ren, 2007. ZnO-based nanowires. Nano, Vol. 2. .

  427. Lopatiuk-Tirpak, O., L. Chernyak, Y.L. Wang, F. Ren, S.J. Pearton, K. Gartsman and Y. Feldman, 2007. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-Ga N. Applied Phys. Lett., Vol. 90. 10.1063/1.2733620.
    CrossRef  |  Direct Link  |  

  428. Lopatiuk-Tirpak, O., L. Chernyak, Y.L. Wang, F. Ren, S.J. Pearton and K. Gartsman, 2007. Doping level dependence of electron rradiation-induced minority carrier diffusion length increase in Mg-doped GaN. Applied Phys. Lett., Vol. 91. 10.1063/1.2776866.
    CrossRef  |  Direct Link  |  

  429. Lim, W.T., P.W. Sadik, D.P. Norton, S.J. Pearton, Y.L. Wang and F. Ren, 2007. Reaction-limited wet etching of CuCrO2. Electrochem. Solid-State Lett., 10: H178-H180.
    CrossRef  |  Direct Link  |  

  430. Lim, W.T., L. Stafford, P.W. Sadik, D.P. Norton, S.J. Pearton, Y.L. Wang and F. Ren, 2007. Ni∕ Au Ohmic contacts to p-type Mg-doped Cu Cr O2 epitaxial layers. Applied Phys. Lett., Vol. 90. 10.1063/1.2719150.
    CrossRef  |  Direct Link  |  

  431. Lim, W.T., L. Stafford, J.S. Wright, L.F. Vossa and R. Khanna et al., 2007. Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium-zinc-oxide films. Applied Surface Sci., 253: 9228-9233.
    CrossRef  |  Direct Link  |  

  432. Lim, W.T., L. Stafford, J.I. Song, J.S. Park and Y.W. Heo et al., 2007. Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries. Applied Surf. Sci., 253: 3773-3778.
    CrossRef  |  Direct Link  |  

  433. Lim, W., Y.L. Wang, F. Ren, D.P. Norton, I.I. Kravchenko, J.M. Zavada and S.J. Pearton, 2007. Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity. Electrochem. Solid-State Lett., 10: H267-H269.
    CrossRef  |  Direct Link  |  

  434. Lee, G.S., C. Lee, H. Choi, D.J. Ahn and J. Kim et al., 2007. Polydiacetylene‐based selective NH3 gas sensor using Sc2O3/GaN structures. Phys. Status Solidi, 204: 3556-3561.
    CrossRef  |  Direct Link  |  

  435. Lee, D.M., S. Hwanga, B.W. Leeb, K.B. Shimc, S.J. Peartond and H. Cho, 2007. Post-CMP dry etching for the removal of the nanoscale subsurface damage layer from a single crystal La3Ga5SiO14 for a high quality wide band SAW filter device. J. Ceramic Proces. Res., 8: 98-102.
    Direct Link  |  

  436. Lee, C.W., H. Choi, M.K. Oh, D.J. Ahn and J. Kim et al., 2007. ZnO-based cyclodextrin sensor using immobilized polydiacetylene vesicles. Electrochem. Solid-State Lett., 10: J1-J3.
    CrossRef  |  Direct Link  |  

  437. Kim, H.S., S.J. Pearton, D.P. Norton and F. Ren, 2007. Behavior of rapid thermal annealed ZnO: P films grown by pulsed laser deposition. J. Applied Phys., Vol. 102. 10.1063/1.2815676.
    CrossRef  |  Direct Link  |  

  438. Khanna, R., L. Stafford, S.J. Pearton, T.J. Anderson and F. Ren et al., 2007. Improved long-term thermal stability at 350° C of TiB2-based ohmic contacts on AlGaN/GaN high electron mobility transistors. J. Electron. Mater., 36: 379-383.
    CrossRef  |  Direct Link  |  

  439. Khanna, R., L. Stafford, S.J. Pearton, H.T. Wang and F. Ren et al., 2007. Reduction of dry etch damage to GaAs using pulse-time modulated plasmas. Electrochem. Solid-State Lett., 10: H139-H141.
    CrossRef  |  Direct Link  |  

  440. Khanna, R., B.P. Gila, L. Stafford, S.J. Pearton, F. Ren and I.I. Kravchenko, 2007. Ir-based schottky and ohmic contacts on n-GaN. J. Electrochem. Soc., 154: H584-H588.
    CrossRef  |  Direct Link  |  

  441. Khanna, R., B.P. Gila, L. Stafford, S.J. Pearton and F. Ren et al., 2007. Thermal stability of Ohmic contacts to InN. Applied Phys. Lett., Vol. 90. 10.1063/1.2724900.
    CrossRef  |  Direct Link  |  

  442. Kang, B.S., S.J. Pearton and F. Ren, 2007. Low temperature (< 100°C) patterned growth of ZnO nanorod arrays on Si. Applied Phys. Lett., Vol. 90. 10.1063/1.2709631.
    CrossRef  |  Direct Link  |  

  443. Kang, B.S., H.T. Wang, F. Ren, S.J. Pearton and T.E. Morey et al., 2007. Enzymatic glucose detection using ZnO nanorods on the gate region of Al Ga N∕ Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 91. .

  444. Kang, B.S., H.T. Wang, F. Ren, B.P. Gila and C.R. Abernathy et al., 2007. pH sensor using Al Ga N∕ Ga N high electron mobility transistors with Sc2O3 in the gate region. Applied Phys. Lett., Vol. 91. 10.1063/1.2754637.
    CrossRef  |  Direct Link  |  

  445. Jun, J., B. Chou, J. Lin, A. Phipps and X. Shengwen et al., 2007. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes. Solid-State Elect., 51: 1018-1022.
    CrossRef  |  Direct Link  |  

  446. Jang, S., F. Ren, N. Emanetoglu, H. Shen, W. Chang and S.J. Pearton, 2007. Design of transparent indium tin oxide-based interdigitated fingers for metal semiconductor metal photodetector. J. Electrochem. Soc., 154 H830.
    CrossRef  |  ASCI  |  PubMed  |  Direct Link  |  

  447. Jang, S., B.S. Kang, F. Ren, N.W. Emanetoglu, H. Shen and W.H. Chang et al., 2007. Comparison of E-beam and sputter-deposited ITO films for 1.55 μm metal-semiconductor-metal photodetector applications. J. Electrochem. Soc., 154: H336-H339.
    CrossRef  |  Direct Link  |  

  448. Ivill, M., S.J. Pearton, Y.W. Heo, J. Kelly, A.F. Hebard and D.P. Norton, 2007. Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P. J. Applied Phys., Vol. 101. 10.1063/1.2739302.
    CrossRef  |  Direct Link  |  

  449. Hite, J.K., R.M. Frazier, R.P. Davies, G.T. Thaler and C.R. Abernathy et al., 2007. Effect of Si Co doping on ferromagnetic properties of GaGdN. J. Electron. Mater., 36: 391-396.
    CrossRef  |  Direct Link  |  

  450. Herrero, A.M., A.M. Gerger, B.P. Gila, S.J. Pearton and H.T. Wang et al., 2007. Interfacial differences in enhanced Schottky barrier height Au/n-GaAs diodes deposited at 77 K. Applied Surf. Sci., 253: 3298-3302.
    CrossRef  |  Direct Link  |  

  451. Govorkov, A.V., A.Y. Polyakov, T.G. Yugova, N.B. Smirnov and E.A. Petrova et al., 2007. Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride. J. Surface Invest. X-Ray Synchrot. Neutron Tech., 1: 380-385.
    CrossRef  |  Direct Link  |  

  452. Chen, W.M., I.A. Buyanova, Y. Oka, C.R. Abernathy and S.J. Pearton, 2007. Prospects of potential semiconductor spin detectors. Solid State Phenomena, 124: 839-842.
    CrossRef  |  Direct Link  |  

  453. Chen, J.J., M. Hlad, A.P. Gerger, B.P. Gila, F. Ren, C.R. Abernathy and S.J. Pearton, 2007. Band offsets in the Mg0.5Ca0.5O/GaN heterostructure system. J. Electron. Mater., 36: 368-372.
    CrossRef  |  Direct Link  |  

  454. Chang, T., W. Wu, J. Lin, S. Jang and F. Ren et al., 2007. Analysis and design of AlGaN/GaN HEMT resistive mixers. Microwave Opt. Technol. Lett., 49: 1152-1154.
    CrossRef  |  Direct Link  |  

  455. Chang, C.Y., S.J. Pearton, P.J. Huang, G.C. Chi and H.T. Wang et al., 2007. Control of nucleation site density of GaN nanowires. Applied Surf. Sci., 253: 3196-3200.
    CrossRef  |  Direct Link  |  

  456. Buyanova, I.A., W.M. Chen, Y. Oka, C.R. Abernathy and S.J. Pearton, 2007. Magneto‐optical spectroscopy of spin injection and spin relaxation in ZnMnSe/ZnCdSe and GaMnN/InGaN spin light‐emitting structures. Phys. Status Solidi (A), 204: 159-173.
    CrossRef  |  Direct Link  |  

  457. Buyanova, I.A., W.M. Chen, M. Izadifard, S.J. Pearton and C. Bihler et al., 2007. Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom? Applied Phys. Lett., Vol. 90. 10.1063/1.2425006.
    CrossRef  |  Direct Link  |  

  458. Buyanova, I.A., J.P. Bergman, G. Pozina, W.M. Chen and S. Rawal et al., 2007. Mechanism for radiative recombination in ZnCdO alloys. Applied Phys. Lett., Vol. 90. 10.1063/1.2751589.
    CrossRef  |  Direct Link  |  

  459. Belogorokhov, A.I., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov and E.A. Kozhukhova et al., 2007. Lattice vibrational properties of ZnMgO grown by pulsed laser deposition. Applied Phys. Lett., Vol. 90. 10.1063/1.2738196.
    CrossRef  |  Direct Link  |  

  460. Bang, J., K. Kim, S. Mok, F. Ren and S.J. Pearton et al., 2007. Simple fabrication of nanoporous films on ZnO for enhanced light emission. Phys. Status Solidi, 204: 3417-3422.
    CrossRef  |  Direct Link  |  

  461. Allums, K.K., M. Hlad, A.P. Gerger, B.P. Gila and C.R. Abernathy et al., 2007. Effect of proton irradiation on interface state density in Sc2O3/GaN and Sc2O3/MgO/GaN diodes. J. Electron. Mater., 36: 519-523.
    CrossRef  |  Direct Link  |  

  462. Zavada, J.M., N. Nepal, J.Y. Lin, H.X. Jiang and E. Brown et al., 2006. Ultraviolet photoluminescence from Gd-implanted AlN epilayers. Applied Phys. Lett., Vol. 89. 10.1063/1.2357552.
    CrossRef  |  Direct Link  |  

  463. Wright, J.S., R. Khanna, K. Ramani, V. Cranciun and R. Singh et al., 2006. ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO. Applied Surf. Sci., 253: 2465-2469.
    CrossRef  |  Direct Link  |  

  464. Wright, J.S., R. Khanna, D.P. Norton, S.J. Pearton, F. Ren and I.I. Kravchenko, 2006. Thermally stable TiB2 ohmic contacts on n-ZnO. Electroch. solid-state letters, 9: G164-G166.
    CrossRef  |  Direct Link  |  

  465. Wang, X.J., I.A. Buyanova, W.M. Chen, M. Izadifard and S. Rawal et al., 2006. Band gap properties of Zn1− x Cdx O alloys grown by molecular-beam epitaxy. Applied Phys. Lett., Vol. 89. 10.1063/1.2361081.
    CrossRef  |  Direct Link  |  

  466. Wang, H.T., T.J. Anderson, F. Ren, C. Li and Z.N. Low et al., 2006. Robust detection of hydrogen using differential Al Ga N∕ Ga N high electron mobility transistor sensing diodes. Applied Phys. Lett., Vol. 89. 10.1063/1.2408635.
    CrossRef  |  Direct Link  |  

  467. Wang, H.T., S. Jang, T. Anderson, J.J. Chen and B.S. Kang et al., 2006. Increased Schottky barrier heights for Au on - and p-type GaN using cryogenic metal deposition. Applied Phys. Lett., Vol. 89. 10.1063/1.2356698.
    CrossRef  |  Direct Link  |  

  468. Wang, H.T., S. Jang, T. Anderson, J.J. Chen and B.S. Kang et al., 2006. Improved Au Schottky contacts on GaAs using cryogenic metal deposition. J. Vacuum Sci. Technol. B, 24: 1799-1802.
    CrossRef  |  Direct Link  |  

  469. Wang, H.T., B.S. Kang, J.J. Chen, T. Anderson and S. Jang et al., 2006. Band-edge electroluminescence from N+-implanted bulk ZnO. Appl. Phys. Lett., 10.1063/1.2186508.
    CrossRef  |  Direct Link  |  

  470. Wang, H.T., B.S. Kang, F. Ren, A. Herrero and A.M. Gerger et al., 2006. Thermal stability of Au schottky diodes on GaAs deposited at either 77 or 300 K. J. Electrochem. Soc., 153: G787-G790.
    CrossRef  |  Direct Link  |  

  471. Voss, L., S.J. Pearton, F. Ren, P. Bove, H. Lahreche and J. Thuret, 2006. Electrical performance of GaN Schottky rectifiers on Si substrates. J. Electrochem. Soc., 153: G681-G684.
    CrossRef  |  Direct Link  |  

  472. Voss, L., S.J. Pearton, F. Ren and I.I. Kravchenko, 2006. ZrB2-based Ohmic contacts to p-GaN. Applied Surf. Sci., 253: 1934-1938.
    CrossRef  |  Direct Link  |  

  473. Voss, L., R. Khanna, S.J. Pearton, F. Ren and I.I. Kravchenko, 2006. Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN. Applied Surf. Sci., 253: 1255-1259.
    CrossRef  |  Direct Link  |  

  474. Voss, L., R. Khanna, S.J. Pearton, F. Ren and I. Kravchenko, 2006. Improved thermally stable ohmic contacts on P-GaN based on W 2 B. Appl. Phys. Lett., 10.1063/1.2161806.
    CrossRef  |  Direct Link  |  

  475. Stafford, L., S.J. Pearton and J. Margot, 2006. Influence of ion mixing on the energy dependence of the ion-assisted chemical etch rate in reactive plasmas. J. Applied Phys., Vol. 100. 10.1063/1.2349544.
    CrossRef  |  Direct Link  |  

  476. Stafford, L., L.F. Voss, S.J. Pearton, J.J. Chen and F. Ren, 2006. Schottky barrier height of boride-based rectifying contacts to p-Ga N. Applied Phys. Lett., Vol. 89. 10.1063/1.2357855.
    CrossRef  |  Direct Link  |  

  477. Rosenberg, R.A., G.K. Shenoy, L.C. Tien, D. Norton, S. Pearton, X.H. Sun and T.K. Sham, 2006. Anisotropic x-ray absorption effects in the optical luminescence yield of ZnO nanostructures. Applied Phys. Lett., Vol. 89. 10.1063/1.2245440.
    CrossRef  |  Direct Link  |  

  478. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and S.J. Pearton et al., 2006. Electrical properties of undoped bulk ZnO substrates. J. Electron. Mater., 35: 663-669.
    CrossRef  |  Direct Link  |  

  479. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton et al., 2006. Neutron irradiation effects in AlGaN/GaN heterojunctions. Phys. B: Condensed Matter, 376: 523-526.
    CrossRef  |  Direct Link  |  

  480. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and N.G. Kolin et al., 2006. Neutron irradiation effects in undoped n-Al Ga N. J. Vacuum Sci. Technol. B, 24: 1094-1097.
    CrossRef  |  Direct Link  |  

  481. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and N.G. Kolin et al., 2006. Neutron irradiation effects in p‐Ga N. J. Vacuum Sci. Technol. B, 24: 2256-2261.
    CrossRef  |  Direct Link  |  

  482. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and N.G. Kolin et al., 2006. Fermi level pinning in heavily neutron-irradiated GaN. J. Applied Phys., Vol. 100 10.1063/1.2361157.
    CrossRef  |  Direct Link  |  

  483. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.M. Dabiran, A.V. Osinsky and S.J. Pearton, 2006. Electrical and optical properties of doped p-type GaN superlattices. Applied Phys. Lett., Vol. 89. 10.1063/1.2354443.
    CrossRef  |  Direct Link  |  

  484. Pearton, S.J., D.P. Norton, Y.W. Heo, L.C. Tien and M.P. Ivill et al., 2006. ZnO spintronics and nanowire devices. J. Electron. Mater., 35: 862-868.
    CrossRef  |  Direct Link  |  

  485. Park, J.S., J.I. Song, Y.W. Heo, J.H. Lee and J.J. Kim et al., 2006. Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by RF magnetron sputtering. J. Vacuum Sci. Technol. B, 24: 2737-2740.
    CrossRef  |  Direct Link  |  

  486. Norton, D.P., M. Ivill, Y. Li, Y.W. Kwon and J.M. Erie et al., 2006. Charge carrier and spin doping in ZnO thin films. Thin Solid Films, 496: 160-168.
    CrossRef  |  Direct Link  |  

  487. Lopatiuk-Tirpak, O., W.V. Schoenfeld, L. Chernyak, F.X. Xiu and J.L. Liu et al., 2006. Carrier concentration dependence of acceptor activation energy in p-type ZnO. Applied Phys. Lett., Vol. 88. 10.1063/1.2206700.
    CrossRef  |  Direct Link  |  

  488. Lopatiuk-Tirpak, O., L. Chernyak, F.X. Xiu, J.L. Liu and S. Jang et al., 2006. Studies of minority carrier diffusion length increase in p-type ZnO:Sb. J. Applied Phys., Vol. 100. 10.1063/1.2358844.
    CrossRef  |  Direct Link  |  

  489. Lim, W.T., L. Stafford, J.I. Song, J.S. Park and Y.W. Heo et al., 2006. High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries. Applied Surf. Sci., 253: 2752-2757.
    CrossRef  |  Direct Link  |  

  490. Lim, W., L. Voss, R. Khanna, B.P. Gila, D.P. Norton, S.J. Pearton and F. Ren, 2006. Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries. Applied Surf. Sci., 253: 889-894.
    CrossRef  |  Direct Link  |  

  491. Lim, W., L. Voss, R. Khanna, B.P. Gila, D.P. Norton, S.J. Pearton and F. Ren, 2006. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO. Applied Surf. Sci., 253: 1269-1273.
    CrossRef  |  Direct Link  |  

  492. Li, Y.J., Y.W. Heo, J.M. Erie, H. Kim, K. Ip, S.J. Pearton and D.P. Norton, 2006. Synthesis and characterization of phosphorus-doped ZnO and (Zn, Mg) O thin films via pulsed laser deposition. J. Electron. Mater., 35: 530-537.
    CrossRef  |  

  493. Lee, I.H., A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton, 2006. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers. Phys. Status Solidi C, 3: 2087-2090.
    CrossRef  |  Direct Link  |  

  494. Ko, S., W. Wu, J. Lin, S. Jang and F. Ren et al., 2006. A high efficiency class‐F power amplifier using AIGaN/GaN HEMT. Microwave Opt. Technol. Lett., 48: 1955-1957.
    CrossRef  |  Direct Link  |  

  495. Kim, J., K. Baik, C. Park, S. Cho, S.J. Pearton and F. Ren, 2006. Measurement of external stress on bulk GaN. Phys. Status Solidi (A), 203: 2393-2396.
    CrossRef  |  Direct Link  |  

  496. Kim, J., J.A. Freitas Jr., J. Mittereder, R. Fitch, B.S. Kang, S.J. Pearton and F. Ren, 2006. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique. Solid-State Electron., 50: 408-411.
    CrossRef  |  Direct Link  |  

  497. Kim, J., F. Ren and S.J. Pearton, 2006. Strain measurement in 6H-SiC under external stress. J. Ceramic Process. Res., 7: 239-240.
    Direct Link  |  

  498. Khanna, R., S.J. Pearton, F. Ren and I.I. Kravchenko, 2006. Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on n-GaN. Applied Surf. Sci., 253: 2340-2344.
    CrossRef  |  Direct Link  |  

  499. Khanna, R., S.J. Pearton, F. Ren and I. Kravchenko, 2006. Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN. J. Electron. Mater., 35: 658-662.
    CrossRef  |  Direct Link  |  

  500. Khanna, R., S.J. Pearton, F. Ren and I. Kravchenko, 2006. Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN. Applied Surf. Sci., 252: 5814-5819.
    CrossRef  |  Direct Link  |  

  501. Khanna, R., K. Ramani, V. Cracium, R. Singh, S.J. Pearton, F. Ren and I.I. Kravchenko, 2006. ZrB2 Schottky diode contacts on n-GaN. Applied Surf. Sci., 253: 2315-2319.
    CrossRef  |  Direct Link  |  

  502. Kang, B.S., S.J. Pearton, J.J. Chen, F. Ren and J.W. Johnson et al., 2006. Electrical detection of deoxyribonucleic acid hybridization with Al Ga N/ Ga N high electron mobility transistors. Applied Phys. Lett., Vol. 89. 10.1063/1.2354491.
    CrossRef  |  Direct Link  |  

  503. Kang, B.S., J.J. Chen, F. Ren, Y. Li, H.S. Kim, D.P. Norton and S.J. Pearton, 2006. ITO/ Ti/ Au Ohmic contacts on n-type ZnO. Applied Phys. Lett., Vol. 88. 10.1063/1.2198513.
    CrossRef  |  Direct Link  |  

  504. Kang, B., H.T. Wang, L.C. Tien, F. Ren and B. Gila et al., 2006. Wide bandgap semiconductor nanorod and thin film gas sensors. Sensors, 6: 643-666.
    CrossRef  |  Direct Link  |  

  505. Jang, S., J.J. Chen, F. Ren, H.S. Yang, S.Y. Han, D.P. Norton and S.J. Pearton, 2006. Simulation of vertical and lateral ZnO light-emitting diodes. J. Vac. Sci. Technol. B, 24: 690-694.
    CrossRef  |  Direct Link  |  

  506. Jang, S., F. Ren, S.J. Pearton, B.P. Gila and M. Hlad et al., 2006. Si-diffused GaN for enhancement-mode GaN MOSFET on Si applications. J. Electron. Mater., 35: 685-690.
    CrossRef  |  Direct Link  |  

  507. Jagadish, C. and S.J. Pearton, 2006. ZnO Bulk, Thin Films and Nanostructures. Elsevier, Oxford, UK.

  508. Irokawa, Y., O. Ishiguro, T. Kachi, S.J. Pearton and F. Ren, 2006. Implantation temperature dependence of Si activation in AlGaN. Applied Phys. Lett., Vol. 88. 10.1063/1.2200283.
    CrossRef  |  Direct Link  |  

  509. Ip, K., G.T. Thaler, H. Yang, S.Y. Han and Y. Li et al., 2006. Contacts to zno. J. Cryst. Growth, 287: 149-156.
    CrossRef  |  Direct Link  |  

  510. Hlad, M., L. Voss, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2006. Selective dry etching of (Sc2O3)x(Ga2O3)1− x gate dielectrics and surface passivation films on GaN. J. Electron. Mater., 35: 680-684.
    CrossRef  |  Direct Link  |  

  511. Hlad, M., L. Voss, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2006. Dry etching of MgCaO gate dielectric and passivation layers on GaN. Applied Surf. Sci., 252: 8010-8014.
    CrossRef  |  Direct Link  |  

  512. Hite, J.K., R.M. Frazier, R. Davies, G.T. Thaler, C.R. Abernathy, S.J. Pearton and J.M. Zavada, 2006. Effect of growth conditions on the magnetic characteristics of GaGdN. Applied Phys. Lett., Vol. 89. 10.1063/1.2337082.
    CrossRef  |  Direct Link  |  

  513. Hite, J., G.T. Thaler, R. Khanna, C.R. Abernathy and S.J. Pearton et al., 2006. Optical and magnetic properties of Eu-doped GaN. Applied Phys. Lett., Vol. 89. 10.1063/1.2358293.
    CrossRef  |  Direct Link  |  

  514. Herrero, A.M., B.P. Gila, C.R. Abernathy, S.J. Pearton, V. Craciun, K. Siebein and F. Ren, 2006. Epitaxial growth of Sc2O3 films on GaN. Applied Phys. Lett., Vol. 89. 10.1063/1.2270058.
    CrossRef  |  Direct Link  |  

  515. Heo, Y.W., K. Ip, S.J. Pearton, D.P. Norton and J.D. Budai, 2006. Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source. Applied Surf. Sci., 252: 7442-7448.
    CrossRef  |  Direct Link  |  

  516. Han, S.Y., J. Hite, G.T. Thaler, R.M. Frazier and C.R. Abernathy et al., 2006. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN. Appl. Phys. Lett., 10.1063/1.2167790.
    CrossRef  |  Direct Link  |  

  517. Govorkov, A.V., N.B. Smirnov, A.Y. Polyakov, A.V. Markov, L. Voss and S.J. Pearton, 2006. Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates. J. Vacuum Sci. Technol. B, 24: 790-794.
    CrossRef  |  Direct Link  |  

  518. Gila, B.P., G.T. Thaler, A.H. Onstine, M. Hlad and A. Gerger et al., 2006. Novel dielectrics for gate oxides and surface passivation on GaN. Solid-State Electron., 50: 1016-1023.
    CrossRef  |  Direct Link  |  

  519. Choi, H., C.W. Lee, G.S. Lee, M.K. Oh and D.J. Ahn et al., 2006. Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors. Phys. Status Solidi (A), 203: R79-R81.
    CrossRef  |  Direct Link  |  

  520. Chen, J.J., T.J. Anderson, S. Jang, F. Ren and Y.J. Li et al., 2006. Ti/Au Ohmic contacts to Al-doped n-ZnO grown by pulsed alaser deposition. J. Electrochem. Soc., 153: G462-G464.
    CrossRef  |  Direct Link  |  

  521. Chen, J.J., S. Jang, T.J. Anderson, F. Ren and Y. Li et al., 2006. Low specific contact resistance Ti/Au contacts on ZnO. Applied Phys. Lett., Vol. 88 10.1063/1.2187576.
    CrossRef  |  Direct Link  |  

  522. Chen, J.J., S. Jang, F. Ren, Y. Li and H.S. Kim et al., 2006. Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO. J. Electron. Mater., 35: 516-519.
    CrossRef  |  Direct Link  |  

  523. Chen, J.J., S. Jang, F. Ren, S. Rawal and Y. Li et al., 2006. Thermal stability of Ti/Al/Pt/Au and Ti/Au ohmic contacts on n-type ZnCdO. Applied Surf. Sci., 253: 746-752.
    CrossRef  |  Direct Link  |  

  524. Chen, J.J., S. Jang, F. Ren, S. Rawal and Y. Li et al., 2006. Comparison of Ti∕Al∕Pt∕Au and Ti∕Au Ohmic contacts on n-type ZnCdO. Appl. Phys. Lett., 10.1063/1.2161927.
    CrossRef  |  Direct Link  |  

  525. Chen, J.J., B.P. Gila, M. Hlad, A. Gerger, F. Ren, C.R. Abernathy and S.J. Pearton, 2006. Erratum: Band offsets in the Sc2O3/GaN heterojunction system [Appl. Phys. Lett. 88, 142115 (2006)]. Applied Phys. Lett., Vol. 88. 10.1063/1.2213199.
    CrossRef  |  Direct Link  |  

  526. Chen, J.J., B.P. Gila, M. Hlad, A. Gerger, F. Ren, C.R. Abernathy and S.J. Pearton, 2006. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy. Appl. Phys. Lett., Vol 88 10.1063/1.2170140.
    CrossRef  |  Direct Link  |  

  527. Chen, J.J., B.P. Gila, M. Hlad, A. Gerger, F. Ren, C.R. Abernathy and S.J. Pearton, 2006.. Band offsets in the Sc2O3∕ Ga N heterojunction system. Applied Phys. Lett., Vol. 88. 10.1063/1.2194314.
    CrossRef  |  Direct Link  |  

  528. Chang, C.Y., T.W. Lan, G.C. Chi, L.C. Chen and K.H. Chen et al., 2006. Effect of ozone cleaning and annealing on Ti ∕ Al ∕ Pt ∕ Au ohmic contacts on gan nanowires. Electroch. solid-state lett., 9: G155-G157.
    CrossRef  |  Direct Link  |  

  529. Chang, C.Y., G.C. Chi, W.M. Wang, L.C. Chen, K.H. Chen, F. Ren and S.J. Pearton, 2006. Electrical transport properties of single GaN and InN nanowires. J. Electron. Mater., 35: 738-743.
    CrossRef  |  Direct Link  |  

  530. Chang, C.Y., F.C. Tsao, C.J. Pan, G.C. Chi and H.T. Wang et al., 2006. Electroluminescence from ZnO nanowire/polymer composite p-n junction. Applied Phys. Lett., Vol. 88. 10.1063/1.2198480.
    CrossRef  |  Direct Link  |  

  531. Buyanova, I.A., W.M. Chen, M.P. Ivill, R. Pate and D.P. Norton et al., 2006. Optical characterization of ZnMnO-based dilute magnetic semiconductor structures. J. Vac. Sci. Technol. B, 24: 259-262.
    CrossRef  |  Direct Link  |  

  532. Buyanova, I.A., M. Izadifard, T. Seppanen, J. Birch and W.M. Chen et al., 2006. Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys. Phys. B: Condensed Matter, 376: 568-570.
    CrossRef  |  Direct Link  |  

  533. Anderson, T.J., F. Ren, L. Covert, J. Lin and S.J. Pearton, 2006. Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator. J. Vac. Sci. Technol. B, 24: 284-287.
    CrossRef  |  Direct Link  |  

  534. Anderson, T.J., F. Ren, L. Covert, J. Lin and S.J. Pearton, 2006. Thermal considerations in design of vertically integrated Si/GaN/SiC multichip modules. J. Electrochem. Soc., 153: G906-G910.
    CrossRef  |  Direct Link  |  

  535. Anderson, T.J., F. Ren, L. Covert, J. Lin and S.J. Pearton et al., 2006. Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates. J. Electron. Mater., 35: 675-679.
    CrossRef  |  Direct Link  |  

  536. Anderson, T., F. Ren, S.J. Pearton, M.A. Mastro and R.T. Holm et al., 2006. Laser ablation of via holes in GaN and Al Ga N/ Ga N high electron mobility transistor structures. J. Vacuum Sci. Technol. B, 24: 2246-2249.
    CrossRef  |  Direct Link  |  

  537. Anderson, T.J., F. Ren, L. Voss, M. Hlad and B.P. Gila et al., 2006. AlGaN/GaN high electron mobility transistors on Si/SiO2 /poly-SiC substrates. J. Vacuum Sci. Technol. B, 24: 2302-2305.
    CrossRef  |  Direct Link  |  

  538. Yang, H.S., Y. Li, D.P. Norton, K. Ip, S.J. Pearton, S. Jang and F. Ren, 2005. Low-resistance ohmic contacts to P-ZnMgO grown by pulsed-laser deposition. Appl. Phys. Lett., 86 10.1063/1.1925309.
    CrossRef  |  Direct Link  |  

  539. Yang, H.S., S.Y. Han, Y.W. Heo, K.H. Baik and D.P. Norton et al., 2005. Fabrication of hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-emitting diodes. Japan. J. Appl. Phys., .
    Direct Link  |  

  540. Yang, H.S., S.Y. Han, M. Hlad, B.P. Gila, K.H. Baik, 2005. Comparison of Surface passivation layers on InGaN/GaN MQW LEDs. J. Semiconductor Technol. Sci., 5: 131-135.
    Direct Link  |  

  541. Yang, H.S., S.Y. Han, K.H. Baik, S.J. Pearton and F. Ren, 2005. Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes. Appl. Phys. Lett, 10.1063/1.1882749.
    CrossRef  |  Direct Link  |  

  542. Yang, H.S., D.P. Norton, S.J. Pearton and F. Ren, 2005. Ti/Au n-type ohmic contacts to bulk ZnO substrates. Appl. Phys. Lett., 10.1063/1.2135381.
    CrossRef  |  Direct Link  |  

  543. Yang, H., Y. Li, D.P. Norton, S.J. Pearton, S. Jung, F. Ren and L.A. Boatner, 2005. Characteristics of unannealed Zn Mg O∕ Zn O p-n junctions on bulk (100) ZnO substrates. Appl. Phys. Lett., 10.1063/1.1906284.
    CrossRef  |  Direct Link  |  

  544. Wang, H.T., B.S. Kang, F. Ren, R.C. Fitch and J.K. Gillespie et al., 2005. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors. Appl. Phys. Lett., 10.1063/1.2117617.
    CrossRef  |  Direct Link  |  

  545. Wang, H.T., B.S. Kang, F. Ren, L.C. Tien and P.W. Sadik et al., 2005. Hydrogen-selective sensing at room temperature with ZnO nanorods. Appl. Phys. Lett., Vol 86 10.1063/1.1949707.
    CrossRef  |  Direct Link  |  

  546. Wang, H.T., B.S. Kang, F. Ren, L.C. Tien and P.W. Sadik et al., 2005. Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods. Appl. Phys. A, 81: 1117-1119.
    CrossRef  |  Direct Link  |  

  547. Voss, L., B.P. Gila, S.J. Pearton, H.T. Wang and F. Ren, 2005. Characterization of bulk GaN rectifiers for hydrogen gas sensing. J. Vac. Sci. Technol. B, 33: 2373-2377.
    CrossRef  |  Direct Link  |  

  548. Tien, L.C., P.W. Sadik, D.P. Norton, L.F. Voss and S.J. Pearton et al, 2005. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods. Appl. Phys. Lett., 10.1063/1.2136070.
    CrossRef  |  Direct Link  |  

  549. Tien, L.C., H.T. Wang, B.S. Kang, F. Ren and P.W. Sadik, et al., 2005. Room-temperature hydrogen-selective sensing using single pt-coated zno nanowires at microwatt power levels. Electroch. Solid-State Lett., 8: G230-G232.
    CrossRef  |  Direct Link  |  

  550. Thaler, G.T., R.M. Frazier, C.R. Abernathy and S.J. Pearton, 2005. Growth and thermal stability of Ga (1−X) CrXN films. Appl. Phys. Lett., 10.1063/1.1895479.
    CrossRef  |  Direct Link  |  

  551. Thaler, G., R. Frazier, B. Gila, J. Stapleton and R. Davies et al., 2005. Effect of oxygen co-Doping on the electronic and magnetic properties of Ga (1− x) Mn x N. Electrochem. solid-state lett., 8: G20-G22.
    CrossRef  |  Direct Link  |  

  552. Stafford, L., J. Margot, M. Chaker and S.J. Pearton, 2005. Energy dependence of ion-assisted chemical etch rates in reactive plasmas. Appl. Phys. Lett., 10.1063/1.2031936.
    CrossRef  |  Direct Link  |  

  553. Sippel-Oakley, J., H.T. Wang, B.S. Kang, Z. Wu, F. Ren, A.G. Rinzler and S.J. Pearton, 2005. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology, Vol 16 .
    Direct Link  |  

  554. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, G.T. Thaler and R.M. Frazier et al., 2005. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy. J. Vacuum Sci. Technol. B, 23: 1-4.
    CrossRef  |  Direct Link  |  

  555. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and Y.W. Heo et al., 2005. Properties of Mn-and Co-doped bulk ZnO crystals. J. Vacuum Sci. Technol. B, 23: 274-279.
    CrossRef  |  Direct Link  |  

  556. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Markov and S.J. Pearton, 2005. Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures. J. Appl. Phys., 10.1063/1.2006223.
    CrossRef  |  Direct Link  |  

  557. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.A. Shlensky and K. McGuire et al., 2005. Properties and annealing stability of Fe doped semi‐insulating GaN structures. Phys. Stat. Solidi C, 2: 2476-2479.
    CrossRef  |  Direct Link  |  

  558. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, R. Khanna and S.J. Pearton, 2005. Changes induced in electrical properties and deep level spectra of p‐AlGaN films by treatment in hydrogen plasma and by proton implantation. Phys. Stat. Solidi C, 2: 2480-2483.
    CrossRef  |  Direct Link  |  

  559. Polyakov, A.N., N.B. Smirnov, A.V. Govorkov, R. Khanna and S.J. Pearton, 2005. Electrical and optical properties of p‐GaN films implanted with transition metal impurities. Phys. Stat. Solidi, 2: 2520-2524.
    CrossRef  |  Direct Link  |  

  560. Pearton, S.J., D.P. Norton, R. Frazier, S.Y. Han, C.R. Abernathy and J.M. Zavada, 2005. Spintronics device concepts., IEE Proceed. Circuits, Dev. Syst., 152: 312-322.
    CrossRef  |  Direct Link  |  

  561. Pearton, S.J., D.P. Norton, K. IP, Y.W. Heo and T. Steiner, 2005. Recent progress in processing and properties of ZnO. Prog. Materials Sci., 50: 293-340.
    Direct Link  |  

  562. Pearton, S.J., 2005. Passivation. In: Encyclopedia of RF and Microwave Engineering, Chang, K. (Ed.). Wiley, New York, USA., ISBN: 978-0-471-27053-9.

  563. Pearton, S.J. and D.P. Norton, 2005. Dry etching of electronic oxides, polymers, and semiconductors. Plasma Process. Polym., 2: 16-37.
    CrossRef  |  Direct Link  |  

  564. Pearton, S.J. F. Ren and C.R. Abernathy, 2005. GaN Processing for Electronics. Sensors and Spintronics. Springer, New York.

  565. Lopatiuk, O., W. Burdett, L. Chernyak, K.P. Ip and Y.W. Heo et al., 2005. Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus. Appl. Phys. Lett., Vol 86 10.1063/1.1844037.
    CrossRef  |  Direct Link  |  

  566. Li, Y.J., Y.W. Heo, Y. Kwon, K. Ip, S.J. Pearton and D.P. Norton, 2005. Transport properties of p-type phosphorus-doped (Zn, Mg) O grown by pulsed-laser deposition. Appl. Phys. Lett., 10.1063/1.2010600.
    CrossRef  |  Direct Link  |  

  567. Laroche, J.R., F. Ren, K.W. Baik, S.J. Pearton, B.S. Shelton and B. Peres, 2005. Design of edge termination for GaN power Schottky diodes. J. Electron. Mater., 34: 370-374.
    CrossRef  |  Direct Link  |  

  568. LaRoche, J.R., Y.W. Heo, B.S. Kang, L.C. Tien and Y. Kwon et al., 2005. Fabrication approaches to ZnO nanowire devices. J. Electron. Mater., 34: 404-408.
    CrossRef  |  Direct Link  |  

  569. Kryliouk, O., H.J. Park, H.T. Wang, B.S. Kang, T.J. Anderson, F. Ren and S.J. Pearton, 2005. Pt-coated InN nanorods for selective detection of hydrogen at room temperature. J. Vac. Sci. Technol. B, 23: 1891-1894.
    CrossRef  |  Direct Link  |  

  570. Kim, J., J.A. Freitas, P.B. Klein, S. Jang, F. Ren and S.J. Pearton, 2005. The Effect of thermally induced stress on device temperature measurements by raman spectroscopy. Electroch. Solid-State Lett. 8, 8: G345-G347.
    CrossRef  |  Direct Link  |  

  571. Kim, D.H., J.S. Yang, Y.S. Kim, T.W. Noh and S.D. Bu et al, 2005. Effects of high-temperature postannealing on magnetic properties of Co-doped anatase TiO2 thin films. Phys. Rev. B, 10.1103/PhysRevB.71.014440.
    CrossRef  |  Direct Link  |  

  572. Khanna, R., S.Y. Han, S.J. Pearton, D. Schoenfeld, W.V. Schoenfeld and F. Ren, 2005. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes. Appl. Phys. Lett., 10.1063/1.2132085.
    CrossRef  |  Direct Link  |  

  573. Khanna, R., S.J. Pearton, F. Ren, I. Kravchenko, C.J. Kao and G.C. Chi, 2005. W2B-based ohmic contacts to n-GaN Appl. Surf. Sci., 525: 1826-1832.
    CrossRef  |  Direct Link  |  

  574. Khanna, R., S.J. Pearton, F. Ren, I. Kravchenko, C.J. Kao and G.C. Chi, 2005. W2B -based rectifying contacts to n -GaN. Appl. Phys. Lett., 10.1063/1.2007865.
    CrossRef  |  Direct Link  |  

  575. Khanna, R., S.J. Pearton, F. Ren and I. Kravchenko, 2005. CrB2 Schottky barrier contacts on n-GaN. J. Electroch. Soc., 152: G804-G807.
    CrossRef  |  Direct Link  |  

  576. Khanna, R., K. Ip, K.K. Allums, K. Baik and C.R. Abernathy et al., 2005. Proton irradiation of ZnO schottky diodes. J. Electron. Mater., 34: 395-398.
    CrossRef  |  Direct Link  |  

  577. Kauser, M.Z., A. Osinsky, A.M. Dabiran and S.J. Pearton, 2005. Optimization of conductivity in P-type GaN∕InGaN-graded superlattices. J. Appl. Phys., Vol 97 10.1063/1.1884247.
    CrossRef  |  Direct Link  |  

  578. Kao, C.J., Y.W. Kwon, Y.W. Heo, D.P. Norton, S.J. Pearton, F. Ren and G.C. Chi, 2005. Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition. J. Vac. Sci. Technol. B, 23: 1024-1028.
    CrossRef  |  Direct Link  |  

  579. Kao, C.J., M.C. Chen, C.J. Tun, G.C. Chi and J.K. Sheu et al., 2005. Comparison of low-temperature GaN, SiO2, and SiNxas gate insulators on AlGaN∕GaN heterostructure field-effect transistors. J. Appl. Phys., 10.1063/1.2058173.
    CrossRef  |  Direct Link  |  

  580. Kang, B.S., Y.W. Heo, L.C. Tien, D.P. Norton, F. Ren et al., 2005. Hydrogen and ozone gas sensing using multiple ZnO nanorods. Appl. Phys. A, 80: 1029-1032.
    CrossRef  |  Direct Link  |  

  581. Kang, B.S., S. Kim, J. Kim, R. Mehandru and F. Ren et al., 2005. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing. Phys. Stat. Solidi, 2: 2684-2687.
    CrossRef  |  Direct Link  |  

  582. Kang, B.S., S. Kim, F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, 2005. Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection. Sensors Actuators B: Chem., 104: 232-236.
    CrossRef  |  Direct Link  |  

  583. Kang, B.S., S. Kim, F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, 2005. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing. IEEE Sensors J., 5: 677-680.
    CrossRef  |  Direct Link  |  

  584. Kang, B.S., R. Mehandru, S. Kim, F. Ren and R.C. Fitch et al., 2005. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Phys. Stat. Solidi, 2: 2672-2675.
    CrossRef  |  Direct Link  |  

  585. Kang, B.S., J. Kim, S. Jang, F. Ren and J.W. Johnson et al., 2005. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Appl. Phys. Lett., 10.1063/1.1952568.
    CrossRef  |  Direct Link  |  

  586. Kang, B.S., F. Ren, Y.W. Heo, L.C. Tien, D.P. Norton and S.J. Pearton, 2005. PH measurements with single ZnO nanorods integrated with a microchannel. Appl. Phys. Lett., 10.1063/1.1883330.
    CrossRef  |  Direct Link  |  

  587. Kang, B.S., F. Ren, M.C. Kang, C. Lofton and W. Tan et al., 2005. Detection of halide ions with AlGaN∕GaN high electron mobility transistors. Appl. Phys. Lett., Vol 86 10.1063/1.1920433.
    CrossRef  |  Direct Link  |  

  588. Kang, B.S., F. Ren, L. Wang, C. Lofton and W.W. Tan et al., 2005. Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility transistors. Appl. Phys. Lett., 10.1063/1.1994951.
    CrossRef  |  Direct Link  |  

  589. Kang, B.S., F. Ren, B.S. Jeong, Y.W. Kwon, K.H. Baik, D.P. Norton and S.J. Pearton, 2005. Use of 370 nm UV light for selective-area fibroblast cell growth. J. Vacuum Sci. Technol. B, 23: 57-60.
    CrossRef  |  Direct Link  |  

  590. Jang, S., J.J. Chen, B.S. Kang, F. Ren and D.P. Norton et al., 2005. Formation of p-nhomojunctions in n-znObulk single crystals by diffusion from a Zn3P2source Appl. Phys. Lett 10.1063/1.2137988.
    CrossRef  |  Direct Link  |  

  591. Ivill, M., S.J. Pearton, D.P. Norton, J. Kelly and A.F. Hebard, 2005. Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn. J. Appl. Phys., 10.1063/1.1856225.
    CrossRef  |  Direct Link  |  

  592. Irokawa, Y., Y. Nakano, M. Ishiko, T. Kachi and J. Kim et al., 2005. GaN enhancement mode metal‐oxide semiconductor field effect transistors. Phys. Stat. Solidi, 2: 2668-2671.
    CrossRef  |  Direct Link  |  

  593. Irokawa, Y., O. Fujishima, T. Kachi, S.J. Pearton and F. Ren, 2005. Electrical characteristics of GaN implanted with Si+ at elevated temperatures. Appl. Phys. Lett., 10.1063/1.1884744.
    CrossRef  |  Direct Link  |  

  594. Irokawa, Y., O. Fujishima, T. Kachi, S.J. Pearton and F. Ren, 2005. Activation characteristics of ion-implanted Si+ in AlGaN. Appl. Phys. Lett., 86: 10.1063/1.1926422.
    CrossRef  |  Direct Link  |  

  595. Ip, K., Y. Li, D.P. Norton, S.J. Pearton and F. Ren, 2005. Low-resistance Au and Au∕Ni∕Au Ohmic contacts to P-ZnMgO. Appl. Phys. Lett., 10.1063/1.2012518.
    CrossRef  |  Direct Link  |  

  596. Ip, K., R. Khanna, D.P. Norton, S.J. Pearton and F. Ren, 2005. Improved thermal stability CrB2 Contacts on ZnO. Japan. J. Appl. Phys. .
    Direct Link  |  

  597. Ip, K., R. Khanna, D.P. Norton, S.J. Pearton and F. Ren et al., 2005. Thermal stability of W2B and W2>B5 contacts on ZnO. Appl. Surf. Sci., 252: 1846-1853.
    CrossRef  |  Direct Link  |  

  598. Heo, Y.W., D.P. Norton and S.J. Pearton, 2005. Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy. J. Appl. Phy., 10.1063/1.2064308.
    CrossRef  |  Direct Link  |  

  599. Heo, Y.W., B.S. Kang, L.C. Tien, D.P. Norton, F. Ren, J.R. La Roche and S.J. Pearton, 2005. UV photoresponse of single ZnO nanowires. Appl. Phys. A, 80: 497-499.
    CrossRef  |  Direct Link  |  

  600. Han, S.Y., H.S. Yang, K.H. Baik, S.J. Pearton and F. Ren, 2005. Role of ion energy and flux on inductively coupled plasma etch damage in InGaN/GaN multi quantum well light emitting diodes. Japan. J. Appl. Phys., .
    Direct Link  |  

  601. Han, S.Y., H. Yang, D.P. Norton, S.J. Pearton, F. Ren, 2005. Design and simulation of ZnO-based light-emitting diode structures. J. Vac. Sci. Technol. B, 23: 2504-2509.
    CrossRef  |  Direct Link  |  

  602. Gila, B.P., M. Hlad, A.H. Onstine, R. Frazier and G.T. Thaler et al., 2005. Improved oxide passivation of AlGaN / GaN high electron mobility transistors. Appl. Phys. Lett., .
    Direct Link  |  

  603. Fujishima, O., T. Kachi, S.J. Pearton and F. Ren, 2005. Si +  Ion implantation into GaN at cryogenic temperatures. Electrochem. Solid-State Lett., 8: G95-G97.
    CrossRef  |  Direct Link  |  

  604. Frazier, R.M., G.T. Thaler, J.Y. Leifer, J.K. Hite and B.P. Gila et al., 2005. Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy. Appl. Phys. Lett., Vol 86 10.1063/1.1857074.
    CrossRef  |  Direct Link  |  

  605. Frazier, R.M., G.T. Thaler, B.P. Gila, J. Stapleton and M.E. Overberg et al., 2005. AIN-based dilute magnetic semiconductors. J. Electron. Mater., 34: 365-369.
    CrossRef  |  Direct Link  |  

  606. El. Kouche, A.J., M.E. Lin, S. Law, B.S. Kim, Kim, F. Ren and S.J. Pearton, 2005. Remote sensing system for hydrogen using GaN Schottky diodes. Sensors Actuators B, 105: 329-333.
    CrossRef  |  Direct Link  |  

  607. Dong, J.W., A. Osinsky, B. Hertog, A.M. Dabiran and P.P. Chow, 2005. Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications. J. Electron. Mater., 34: 416-423.
    CrossRef  |  Direct Link  |  

  608. Coleman, V.A., J.E. Bradby, C. Jagadish, P. Munroe and Y.W. Heo et al., 2005. Mechanical properties of ZnO epitaxial layers grown on a-and c-axis sapphire. Appl. Phy. Lett., Vol. 86 10.1063/1.1929874.
    CrossRef  |  Direct Link  |  

  609. Chu, S.N.G., F. Ren, S.J. Pearton, B.S. Kang and S. Kim et al., 2005. Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors. Mater. Sci. Engin., A, 409: 340-347.
    CrossRef  |  Direct Link  |  

  610. Chen, W.M., I.A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo et al., 2005. Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection. Appl. Phys. Lett., 10.1063/1.2125125.
    CrossRef  |  Direct Link  |  

  611. Chen, J.J., F. Ren, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong and S.N.G. Chu, 2005. Diffusion-controlled selective wet etching of zncdo over zno. Electroch. Solid-State Lett., 8: G359-G361.
    CrossRef  |  Direct Link  |  

  612. Chang, C.Y., G.C. Chi, W.M. Wang, L.C. Chen, K.H. Chen, F. Ren and S.J. Pearton, 2005. Transport properties of InN nanowires. Appl. Phys. Lett., 10.1063/1.2037850.
    CrossRef  |  Direct Link  |  

  613. Thaler, G.T., R.M. Frazier, J. Stapleton, C.R. Abernathy and S.J. Pearton et al., 2004. Properties of (Ga, Mn)N with and without detectable second phases. Electrochem. Solid-State Lett., 7: G34-G36.
    CrossRef  |  Direct Link  |  

  614. Thaler, G., R. Frazier, B. Gila, J. Stapleton and M. Davidson et al., 2004. Effect of Mn concentration on the structural, optical and magnetic properties of GaMnN. Applied Phys. Lett., 84: 1314-1316.
    CrossRef  |  Direct Link  |  

  615. Thaler, G., R. Frazier, B. Gila, J. Stapleton and M. Davidson et al., 2004. Effect of nucleation layer on the magnetic properties of GaMnN. Applied Phys. Lett., 84: 2578-2580.
    CrossRef  |  Direct Link  |  

  616. Shi, G.A., M. Saboktakin, M. Stavola and S.J. Pearton, 2004. Hidden hydrogen” in as-grown ZnO. Appl. Phys. Lett., 85: 5601-5603.
    CrossRef  |  Direct Link  |  

  617. Seo, S.S.A., T.W. Noh, Y.W. Kim, J.D. Lim and Y.D. Park et al., 2004. Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn. J. Applied Phys., 95: 8172-8177.
    CrossRef  |  Direct Link  |  

  618. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, V.N. Danilin and T.A. Zhukova et al., 2004. Effects of Sc2O3 surface passivation on deep level spectra of AlGaN/GaN high electron mobility transistors. J. Electrochem. Soc., 151: G497-G501.
    CrossRef  |  Direct Link  |  

  619. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, S.J. Pearton and R.M. Frazier et al., 2004. High-dose Mn and Cr implantation into p-AlGaN films. Semicond. Sci. Technol., 19: 1169-1173.
    CrossRef  |  Direct Link  |  

  620. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, S.J. Pearton and J.M. Zavada, 2004. Electrical and optical properties of p-GaN films implanted with transition metal impurities. J. Phys.: Condens. Matter, 16: 2967-2972.
    CrossRef  |  Direct Link  |  

  621. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, R.M. Frazier, J.Y. Liefer et al., 2004. Properties of highly Cr-doped AlN. Appl. Phys. Lett., 85: 4067-4069.
    CrossRef  |  Direct Link  |  

  622. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, R.M. Frazier and J.Y. Liefer et al., 2004. Optical and electrical properties of AlCrN films grown by molecular beam epitaxy. J. Vacuum Sci. Technol. B, 22: 2758-2763.
    CrossRef  |  Direct Link  |  

  623. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, R.M. Frazier and G.T. Thaler et al., 2004. Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr. J. Electron. Mater., 33: 384-388.
    CrossRef  |  Direct Link  |  

  624. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, N.V. Pashkova and A.A. Shlensky et al., 2004. Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 77-81.
    CrossRef  |  Direct Link  |  

  625. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, K.H. Baik, S.J. Pearton and J.M. Zavada, 2004. Changes in electrical and optical properties of p-AlGaN due to proton implantation. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 2291-2294.
    CrossRef  |  Direct Link  |  

  626. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, K.H. Baik and S.J. Pearton et al., 2004. Effects of hydrogen plasma treatment on electrical properties of p-AlGaN. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 771-775.
    CrossRef  |  Direct Link  |  

  627. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, J. Kim and F. Ren et al., 2004. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes. J. Electron. Mater., 33: 241-247.
    CrossRef  |  Direct Link  |  

  628. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.A. Shlensky and S.J. Pearton, 2004. Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures. J. Applied Phys., 95: 5591-5596.
    CrossRef  |  Direct Link  |  

  629. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov and S.J. Pearton, 2004. Properties of Fe-doped semi-insulating GaN structures. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 120-125.
    CrossRef  |  Direct Link  |  

  630. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, N.V. Pashkova and S.J. Pearton et al., 2004. Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe. Mater. Sci. Semicond. Process., 7: 77-81.
    CrossRef  |  Direct Link  |  

  631. Pearton, S.J., Y.D. Park, C.R. Abernathy, M.E. Overberg and G.T. Thaler et al., 2004. Ferromagnetism in GaN and SiC doped with transition metals. Thin Solid Films, 447: 493-501.
    CrossRef  |  Direct Link  |  

  632. Pearton, S.J., W.H. Heo, M. Ivill, D.P. Norton and T. Steiner, 2004. Dilute magnetic semiconducting oxides. Semicond. Sci. Technol., 19: R59-R74.
    CrossRef  |  Direct Link  |  

  633. Pearton, S.J., D.P. Norton, K. Ip, Y.W. Heo and T. Steiner, 2004. Recent advances in processing of ZnO. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 932-948.
    CrossRef  |  Direct Link  |  

  634. Pearton, S.J., C.R. Abernathy, G.T. Thaler, R.M. Frazier and Y.H. Heo et al., 2004. Progress in wide bandgap ferromagnetic semiconductors and semiconducting oxides. Defect Diffusion Forum, 230: 17-46.
    CrossRef  |  Direct Link  |  

  635. Pearton, S.J., C.R. Abernathy, G.T. Thaler, R.M. Frazier and D.P. Norton et al., 2004. Wide bandgap GaN-based semiconductors for spintronics. J. Phys.: Condens. Matter, 16: R209-R245.
    CrossRef  |  Direct Link  |  

  636. Pearton, S.J., C.R. Abernathy, B.P. Gila, F. Ren, J.M. Zavada and Y.D. Park, 2004. Enhanced functionality in GaN and SiC devices by using novel processing. Solid-State Electron., 48: 1965-1974.
    CrossRef  |  Direct Link  |  

  637. Pearton, S.J., B.S. Kang, S. Kim, F. Ren and B.P. Gila et al., 2004. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys.: Condens. Matter, 16: R961-R994.
    CrossRef  |  Direct Link  |  

  638. Pearton, S.J., 2004. Etching of Semiconductors for Optoelectronics. In: Encyclopedia of Optical Engineering, Driggers, R.G. (Ed.). Marcel Dekker, New York, USA.

  639. Pearton, S., 2004. Magnetic semiconductors: Silicon-based spintronics. Nat. Mater., 3: 203-204.
    CrossRef  |  Direct Link  |  

  640. Overberg, M.E., G.T. Thaler, R.M. Frazier, C.R. Abernathy and S.J. Pearton et al., 2004. Ferromagnetic AlGaCrP films by ion implantation. Electrochem. Solid-State Lett., 7: G44-G46.
    CrossRef  |  Direct Link  |  

  641. Osinsky, A., J.W. Dong, M.Z. Kauser, B. Hertog and A.M. Dabiran, 2004. Mg Zn O∕ Al Ga N heterostructure light-emitting diodes. Appl. Phys. Lett., 85: 4272-4274.
    CrossRef  |  Direct Link  |  

  642. Norton, D.P., Y.W. Heo, M.P. Ivill, K. Ip, S.J. Pearton, M.F. Chisholm and T. Steiner, 2004. ZnO: Growth, doping and processing. Mater. Today, 7: 34-40.
    CrossRef  |  Direct Link  |  

  643. Moser, N., R.C. Fitch, A. Crespo, J.K. Gillespie and G.H. Jessen et al., 2004. Dramatic improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment. J. Electroch. Soc., 151: G915-G918.
    CrossRef  |  Direct Link  |  

  644. Mehandru, R., S. Kang, S. Kim, F. Ren, I. Kravchenko, W. Lewis and S.J. Pearton, 2004. Effect of deposition conditions and annealing on W Schottky contacts on n-GaN. Mater. Sci. Semicond. Process., 7: 95-98.
    CrossRef  |  Direct Link  |  

  645. Mehandru, R., B. Luo, B.S. Kang, J. Kim and F. Ren et al., 2004. AlGaN/GaN HEMT based liquid sensors. Solid-State Electron., 48: 351-353.
    CrossRef  |  Direct Link  |  

  646. Mastro, M.A., D. Tsvetkov, V. Soukhoveev, A. Usikov and V. Dmitriev et al., 2004. RF performance of HVPE-grown AlGaN/GaN HEMTs. Solid-State Electron., 48: 179-182.
    CrossRef  |  Direct Link  |  

  647. Luo, B., R. Mehandru, B.S. Kang, J. Kim and F. Ren et al., 2004. Small signal measurement of Sc2O3 AlGaN/GaN moshemts. Solid-State Electron., 48: 355-358.
    CrossRef  |  Direct Link  |  

  648. Lim, W.T., I.K. Baek, J.W. Lee, M.H. Jeon, W.W. Park, G.S. Cho and S.J. Pearton, 2004. Planar inductively coupled BCl3 plasma etching of III-V semiconductors. J. Electrochem. Soc., 151: G343-G346.
    CrossRef  |  Direct Link  |  

  649. Lim, W.T., I.K. Baek, J.W. Lee, E.S. Lee, M.H. Jeon, G.S. Cho and S.J. Pearton, 2004. BCl3/Ne etching of III-V semiconductors in a planar inductively coupled plasma reactor. Applied Surf. Sci., 222: 74-81.
    CrossRef  |  Direct Link  |  

  650. Lim, W.T., I.G. Baek, P.G. Jung, J.W. Lee and G.S. Cho et al., 2004. Investigation of GaAs dry etching in a planar inductively coupled BCl3 plasma. J. Electrochem. Soc., 151: G163-G166.
    CrossRef  |  Direct Link  |  

  651. Lim, J.D., K.S. Suh, S.B. Shim, C.R. Abernathy, S.J. Pearton, R.G. Wilson and Y.D. Park, 2004. Anomalous hall effect in manganese ion-implanted highly carbon-doped gallium arsenide. Electrochem. Solid-State Lett., 7: G182-G184.
    CrossRef  |  Direct Link  |  

  652. Lee, K.P., A.M. Dabiran, P.P. Chow, A. Osinsky, S.J. Pearton and F. Ren, 2004. Temperature dependence of pnp GaN/InGaN HBT performance. Solid-State Electron., 48: 37-41.
    CrossRef  |  Direct Link  |  

  653. Lee, K., Z. Wu, Z. Chen, F. Ren, S.J. Pearton and A.G. Rinzler, 2004. Single wall carbon nanotubes for p-type ohmic contacts to GaN light-emitting diodes. Nano Lett., 4: 911-914.
    CrossRef  |  Direct Link  |  

  654. Lee, J.W., Y.T. Lim, I.K. Baek, S.Y. Yoo and G.S. Cho et al., 2004. Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar and BCl3/Ne. Applied Surf. Sci., 233: 402-410.
    CrossRef  |  Direct Link  |  

  655. Lee, J.W., W.T. Lim, I.K. Baek, S.R. Yoo, M.H. Jeon, G.S. Cho and S.J. Pearton, 2004. Etching of As- and P-based III-V semiconductors in a planar inductively coupled BCl3/Ar plasma. J. Electron. Mater., 33: 358-363.
    CrossRef  |  Direct Link  |  

  656. Lee, J.W., W.T. Lim, I.K. Baek, S.R. Yoo and M.H. Jeon et al., 2004. Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas. Solid-State Electron., 48: 189-192.
    CrossRef  |  Direct Link  |  

  657. Lee, J.S., J.D. Lim, K.S. Suh, S.B. Shim and Y.D. Park et al., 2004. AC transport measurement of Mn ion-implanted p+-GaAs:C. J. Magn. Magn. Mater., 272: E1573-E1574.
    CrossRef  |  Direct Link  |  

  658. LaRoche, J.R., J. Kim, J.W. Johnson, B. Luo and B.S. Kang et al., 2004. Comparison of interface state density characterization methods for SiO2/4H SiC MOS diodes. Electrochem. Solid-State Lett., 7: G21-G24.
    CrossRef  |  Direct Link  |  

  659. LaRoche, J.R., B. Luo, F. Ren, K.H. Baik and D. Stodilka et al., 2004. GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates. Solid-State Electron., 48: 193-196.
    CrossRef  |  Direct Link  |  

  660. Kim, S., B.S. Kang, F. Ren, Y.W. Heo, K. Ip, D.P. Norton and S.J. Pearton, 2004. Contacts to p-type ZnMgO. Applied Phys. Lett., 84: 1904-1906.
    CrossRef  |  Direct Link  |  

  661. Kim, S., B.S. Kang, F. Ren, Y.W. Heo, K. Ip, D.P. Norton and S.J. Pearton, 2004. Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates. Electrochem. Solid-State Lett., 7: G145-G147.
    CrossRef  |  Direct Link  |  

  662. Kim, S., B.S. Kang, F. Ren, K. Ip, Y.W. Heo, D.P. Norton and S.J. Pearton, 2004. Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen. Applied Phys. Lett., 84: 1698-1700.
    CrossRef  |  Direct Link  |  

  663. Kim, S., B.S. Bang, F. Ren, J. D’entremond, W. Blumenfeld, T. Cordock and S.J. Pearton, 2004. High-rate laser ablation for through-wafer via holes in SiC substrates and GaN/AlN/SiC templates. J. Semicond. Technol. Sci., 4: 217-221.
    Direct Link  |  

  664. Kim, S., B.S. Bang, F. Ren, J. D'entremont, W. Blumenfeld, T. Cordock and S.J. Pearton, 2004. SiC via holes by laser drilling. J. Electron. Mater., 33: 477-480.
    CrossRef  |  Direct Link  |  

  665. Kim, J., K.H. Baik, B.S. Kang, S. Kim and Y. Irokawa et al., 2004. 4H-SiC Schottky diode array with 430 A forward current. Electrochem. Solid-State Lett., 7: G125-G127.
    CrossRef  |  Direct Link  |  

  666. Kim, J., F. Ren, G.Y. Chung, M.F. MacMillan and A.G. Baca et al., 2004. Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation. Applied Phys. Lett., 84: 371-373.
    CrossRef  |  Direct Link  |  

  667. Kim, J., F. Ren, D. Schoenfeld, S.J. Pearton, A.G. Baca and R.D. Briggs, 2004. High dose 60Co γ-ray irradiation of W/GaN Schottky diodes. J. Semicond. Technol. Sci., 4: 124-127.
    Direct Link  |  

  668. Kim, J., F. Ren, A.G. Baca, G.Y. Chung and S.J. Pearton, 2004. Thermal stability of WSiX Schottky contacts on n-type 4H-SiC. Solid-State Electron., 48: 175-178.
    CrossRef  |  Direct Link  |  

  669. Kim, D.H., J.S. Yang, Y.S. Kim Y.J. Chang and T. Noh et al, 2004. Superparamagnetism in Co ion‐implanted epitaxial anatase TiO2 thin films. Annal. Physik, 13: 70-71.
    CrossRef  |  Direct Link  |  

  670. Khanna, R., K.K. Allums, C.R. Abernathy, S.J. Pearton and J. Kim et al., 2004. Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes. Applied Phys. Lett., 85: 3131-3133.
    CrossRef  |  Direct Link  |  

  671. Khanna, R., K. Ip, Y.W. Heo, D.P. Norton, S.J. Pearton and F. Ren, 2004. Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces. Applied Phys. Lett., 85: 3468-3470.
    CrossRef  |  Direct Link  |  

  672. Khanna, R., K. Ip, K.K. Allums, K. Baik and C.R. Abernathy et al., 2004. Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes. Physica Status Solidi (a), 201: R79-R82.
    CrossRef  |  Direct Link  |  

  673. Kang, B.S., S. Kim, J.R. La Roche, F. Ren and R.C. Fitch et al., 2004. Annealing temperature stability of Ir and Ni-based Ohmic contacts on Al Ga N∕ Ga N high electron mobility transistors. J. Vac. Sci. Technol. B, 22: 2635-2639.
    CrossRef  |  Direct Link  |  

  674. Kang, B.S., S. Kim, F. Ren, K. Ip and Y.W. Heo et al., 2004. Detection of C2H4 using wide-bandgap semiconductor sensors: AlGaN/GaN MOS diodes and bulk ZnO schottky rectifiers. J. Electrochem. Soc., 151: G468-G471.
    CrossRef  |  Direct Link  |  

  675. Kang, B.S., S. Kim, F. Ren, J.W. Johnson and R.J. Therrien et al., 2004. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes. Applied Phys. Lett., 85: 2962-2964.
    CrossRef  |  Direct Link  |  

  676. Kang, B.S., R. Mehandru, S. Kim, F. Ren and R.C. Fitch et al., 2004. Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., 84: 4635-4637.
    CrossRef  |  Direct Link  |  

  677. Kang, B.S., G. Louche, R.S. Duran, Y. Gnanou, S.J. Pearton and F. Ren, 2004. Gateless AlGaN/GaN HEMT response to block co-polymers. Solid-State Electron., 48: 851-854.
    CrossRef  |  Direct Link  |  

  678. Kang, B.S., F. Ren, Y. Irokawa, K.W. Baik and S.J. Pearton et al., 2004. Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 710-714.
    CrossRef  |  Direct Link  |  

  679. Kang, B.S., F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, 2004. AlGaN/GaN-based metal-oxide-semiconductor diode-based hydrogen gas sensor. Applied Phys. Lett., 84: 1123-1125.
    CrossRef  |  Direct Link  |  

  680. Irokawa, Y., Y. Nakano, M. Ishiko, T. Kachi and J. Kim et al., 2004. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied Phys. Lett., 84: 2919-2921.
    CrossRef  |  Direct Link  |  

  681. Irokawa, Y., J. Kim, F. Ren, K.H. Baik and B.P. Gila et al., 2004. Si+ ion implanted MPS bulk GaN diodes. Solid-State Electron., 48: 827-830.
    CrossRef  |  Direct Link  |  

  682. Irokawa, Y., J. Kim, F. Ren, K.H. Baik and B.P. Gila et al., 2004. Lateral Schottky GaN rectifiers formed by Si+ ion implantation. J. Electron. Mater., 33: 426-430.
    CrossRef  |  Direct Link  |  

  683. Irokawa, Y., B. Luo, F. Ren, C.C. Pan and G.T. Chen et al., 2004. DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates. Electrochem. Solid-State Lett., 7: G8-G10.
    CrossRef  |  Direct Link  |  

  684. Irokawa, Y., B. Luo, F. Ren, B.P. Gila and C.R. Abernathy et al., 2004. Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates. Electrochem. Solid-State Lett., 7: G188-G191.
    CrossRef  |  Direct Link  |  

  685. Irokawa, Y., B. Luo, B.S. Kang, J. Kim and J.R. LaRoche et al., 2004. 2.6 A, 0.69 MW cm-2 single-chip bulk GaN pin rectifier. Solid-State Electron., 48: 359-361.
    CrossRef  |  Direct Link  |  

  686. Ip, K., Y.W. Heo, K.H. Baik, D.P. Norton, S.J. Pearton and F. Ren, 2004. Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 171-174.
    CrossRef  |  Direct Link  |  

  687. Ip, K., Y.W. Heo, K.H. Baik, D.P. Norton, S.J. Pearton and F. Ren, 2004. Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO. Applied Phys. Lett., 84: 544-546.
    CrossRef  |  Direct Link  |  

  688. Ip, K., Y.W. Heo, K.H. Baik, D.P. Norton and S.J. Pearton et al., 2004. Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO. Applied Phys. Lett., 84: 2835-2837.
    CrossRef  |  Direct Link  |  

  689. Ip, K., Y.W. Heo, D.P. Norton, S.J. Pearton, J.R. LaRoche and F. Ren, 2004. Zn0.9Mg0.1O/ZnO p-n junctions grown by pulsed-laser deposition. Applied Phys. Lett., 85: 1169-1171.
    CrossRef  |  Direct Link  |  

  690. Ip, K., B.P. Gila, A.H. Onstine, E.S. Lambers and Y.W. Heo et al., 2004. Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning. Applied Phys. Lett., 84: 5133-5135.
    CrossRef  |  Direct Link  |  

  691. Ip, K., B.P. Gila, A.H. Onstine, E.S. Lambers and Y.W. Heo et al., 2004. Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO. Applied Surf. Sci., 236: 387-393.
    CrossRef  |  Direct Link  |  

  692. Heo, Y.W., Y.W. Kwon, Y. Li, S.J. Pearton and D.P. Norton, 2004. p-type behavior in phosphorus-doped (Zn,Mg)O device structures. Applied Phys. Lett., 84: 3474-3476.
    CrossRef  |  Direct Link  |  

  693. Heo, Y.W., M.P. Ivill, K. Ip, D.P. Norton and S.J. Pearton et al., 2004. Effects of high-dose Mn implantation into ZnO grown on sapphire. Applied Phys. Lett., 84: 2292-2294.
    CrossRef  |  Direct Link  |  

  694. Heo, Y.W., L.C. Tien, Y. Kwon, D.P. Norton, S.J. Pearton, B.S. Kang and F. Ren, 2004. Depletion-mode ZnO nanowire field-effect transistor. Applied Physics Lett., 85: 2274-2276.
    CrossRef  |  Direct Link  |  

  695. Heo, Y.W., L.C. Tien, D.P. Norton, S.J. Pearton, B.S. Kang, F. Ren and J.R. LaRoche, 2004. Pt/ZnO nanowire Schottky diodes. Applied Phys. Lett., 85: 3107-3109.
    CrossRef  |  Direct Link  |  

  696. Heo, Y.W., L.C. Tien, D.P. Norton, B.S. Kang, F. Ren, B.P. Gila and S.J. Pearton, 2004. Electrical transport properties of single ZnO nanorods. Applied Phys. Lett., 85: 2002-2004.
    CrossRef  |  Direct Link  |  

  697. Heo, Y.W., K. Ip, S.J. Pearton and D.P. Norton, 2004. The near band‐edge emission and photoconductivity response of phosphorus‐doped ZnO thin films grown by pulsed laser deposition. Appl. Matr. Sci., 201: 1500-1509.
    CrossRef  |  Direct Link  |  

  698. Heo, Y.W., K. Ip, S.J. Park, S.J. Pearton and D.P. Norton, 2004. Shallow donor formation in phosphorus-doped ZnO thin films. Applied Phys. A: Mater. Sci. Process., 78: 53-57.
    CrossRef  |  Direct Link  |  

  699. Heo, Y.W., J. Kelly, D.P. Norton, A.F. Hebard, S.J. Pearton, J.M. Zavada and L.A. Boatner, 2004. Effects of high dose Ni, Fe, Co, and Mn implantation into SnO2. Electroch. solid-state lett., 7: G309-G312.
    CrossRef  |  Direct Link  |  

  700. Heo, Y.W., D.P. Norton, L.C. Tien, Y. Kwon and B.S. Kang et al., 2004. ZnO nanowire growth and devices. Mater. Sci. Eng. R, 47: 1-47.
    CrossRef  |  Direct Link  |  

  701. Hebard, A.F., R.P. Rairigh, J.G. Kelly, S.J. Pearton, C.R. Abernathy, S.N.G. Chu and R.G. Wilson, 2004. Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors. J. Phys. D: Applied Phys., 37: 511-517.
    CrossRef  |  Direct Link  |  

  702. Fitch, R.C., J.K. Gillespie, N. Moser, T. Jenkins and J. Sewell et al., 2004. Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., 84: 1495-1497.
    CrossRef  |  Direct Link  |  

  703. Fitch, R.C., J.K. Gillespie, N. Moser, G. Jessen and T. Jenkins et al., 2004. Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 22: 619-623.
    CrossRef  |  Direct Link  |  

  704. Buyanova, I.A., M. Izadifard, W.M. Chen, J. Kim and F. Ren et al., 2004. On the origin of spin loss in GaMnN/InGaN light-emitting diodes. Applied Phys. Lett., 84: 2599-2601.
    CrossRef  |  Direct Link  |  

  705. Buyanova, I.A., M. Izadifard, L. Storasta, W.M. Chen and J. Kim et al., 2004. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. J. Electron. Mater., 33: 467-471.
    CrossRef  |  Direct Link  |  

  706. Buyanova, I.A., J.P. Bergman, W.M. Chen, G. Thaler and R. Frazier et al., 2004. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers. J. Vacuum Sci. Technol. B, 22: 2668-2672.
    CrossRef  |  Direct Link  |  

  707. Theodoropoulou, N.A., A.F. Hebard, D.P. Norton, J.D. Budai and L.A. Boatner et al., 2003. Ferromagnetism in Co- and Mn-doped ZnO. Solid-State Electron., 47: 2231-2235.
    CrossRef  |  Direct Link  |  

  708. Shmidt, N.M., A.G. Kolmakov, A.V. Loskutov, A.Y. Polyakov and N.B. Smirnov et al., 2003. Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface. Solid-State Electron., 47: 1003-1008.
    CrossRef  |  Direct Link  |  

  709. Seo, S.S.A., M.W. Kim, Y.S. Lee, T.W. Noh and Y.D. Park et al., 2003. Observation of sphere resonance peak in ferromagnetic GaN:Mn. Applied Phys. Lett., 82: 4749-4751.
    CrossRef  |  Direct Link  |  

  710. Polyakov, A.Y., N.B. Smirnov, E.A. Kozhukhova, V.I. Vdovin, K. Ip, D.P. Norton and S.J. Pearton, 2003. Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 21: 1603-1608.
    CrossRef  |  Direct Link  |  

  711. Polyakov, A.Y., N.B. Smirnov, E.A. Kozhukhova and V.I. Vdovin et al., 2003. Electrical characteristics of Au and Ag Schottky contacts on n-ZnO. Applied Phys. Lett., 83: 1575-1577.
    CrossRef  |  Direct Link  |  

  712. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, V.N. Danilin and T.A. Zhukova et al., 2003. Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., 83: 2608-2610.
    CrossRef  |  Direct Link  |  

  713. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, S.J. Pearton and J.M. Zavada, 2003. Proton implantation effects on electrical and luminescent properties of p-GaN. J. Applied Phys., 94: 3069-3074.
    CrossRef  |  Direct Link  |  

  714. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, N.V. Pashkova, S.J. Pearton, J.M. Zavada and R.G. Wilson, 2003. Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 2500-2505.
    CrossRef  |  Direct Link  |  

  715. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, N.V. Pashkova and A.A. Shlensky et al., 2003. Electrical and optical properties of Cr and Fe implanted n-GaN. J. Applied Phys., 93: 5388-5396.
    CrossRef  |  Direct Link  |  

  716. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, M.G. Mil'vidskii and S.J. Pearton et al., 2003. Deep levels studies of AlGaN/GaN superlattices. Solid-State Electron., 47: 671-676.
    CrossRef  |  Direct Link  |  

  717. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, K.H. Baik and S.J. Pearton et al., 2003. Hydrogen plasma passivation effects on properties of p-GaN. J. Applied Phys., 94: 3960-3965.
    CrossRef  |  Direct Link  |  

  718. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, K. Ip and M.E. Overberg et al., 2003. Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO. J. Applied Phys., 94: 400-406.
    CrossRef  |  Direct Link  |  

  719. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, J. Kim and F. Ren et al., 2003. Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn. Solid-State Electron., 47: 963-968.
    CrossRef  |  Direct Link  |  

  720. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, J. Kim and F. Ren et al., 2003. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer. Solid-State Electron., 47: 981-987.
    CrossRef  |  Direct Link  |  

  721. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and V.I. Vdovin et al., 2003. Proton implantation effects on electrical and recombination properties of undoped ZnO. J. Applied Phys., 94: 2895-2900.
    CrossRef  |  Direct Link  |  

  722. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov and S.J. Pearton, 2003. Electrical and optical properties of Fe-doped semi-insulating GaN templates. Applied Phys. Lett., 83: 3314-3316.
    CrossRef  |  Direct Link  |  

  723. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, N.V. Pashkova and S.J. Pearton et al., 2003. Properties of Mn and Co implanted ZnO crystals. Solid-State Electron., 47: 1523-1531.
    CrossRef  |  Direct Link  |  

  724. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, N.M. Shmidt, S.J. Pearton and A.V. Osinsky, 2003. New type of defects related to nonuniform distribution of compensating centers in p-GaN films. Solid-State Electron., 47: 51-56.
    CrossRef  |  Direct Link  |  

  725. Pearton, S.J., Y.D. Park, C.R. Abernathy, M.E. Overberg, G.T. Thaler, J. Kim and F. Ren, 2003. GaN and other materials for semiconductor spintronics. J. Electron. Mater., 32: 288-297.
    CrossRef  |  Direct Link  |  

  726. Pearton, S.J., M.E. Overberg, G.T. Thaler, C.R. Abernathy and J. Kim et al., 2003. Room temperature ferromagnetism in GaMnN and GaMnP. Physica Status Solidi (a), 195: 222-227.
    CrossRef  |  Direct Link  |  

  727. Pearton, S.J., D.P. Norton, K. Ip, Y.W. Heo and T. Steiner, 2003. Recent progress in processing and properties of ZnO. Superlattices Microstruct., 34: 3-32.
    CrossRef  |  Direct Link  |  

  728. Pearton, S.J., C.R. Abernathy, M.E. Overberg, G.T. Thaler and D.P. Norton et al., 2003. Wide band gap ferromagnetic semiconductors and oxides. J. Applied Phys., 93: 1-13.
    CrossRef  |  Direct Link  |  

  729. Pearton, S.J., C.R. Abernathy, G.T. Thaler, R. Frazier and F. Ren et al., 2003. Effects of defects and doping on wide band gap ferromagnetic semiconductors. Physica B: Condens. Matter, 340: 39-47.
    CrossRef  |  Direct Link  |  

  730. Pearton, S.J., C.R. Abernathy, D.P. Norton, A.F. Hebard, Y.D. Park, L.A. Boatner and J.D. Budai, 2003. Advances in wide bandgap materials for semiconductor spintronics. Mater. Sci. Eng.: R: Rep., 40: 137-168.
    CrossRef  |  Direct Link  |  

  731. Park, Y.D., J.D. Lim, K.S. Suh, S.B. Shim and J.S. Lee et al., 2003. Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C. Phys. Rev. B, Vol. 68, No. 8. 10.1103/PhysRevB.68.085210.
    CrossRef  |  Direct Link  |  

  732. Overberg, M.E., K.H. Baik, G.T. Thaler, C.R. Abernathy and S.J. Pearton et al., 2003. Hydrogenation effects on magnetic properties of GaMnP. Electrochem. Solid-State Lett., 6: G131-G133.
    CrossRef  |  Direct Link  |  

  733. Overberg, M.E., G.T. Thaler, R.M. Frazier, R. Rairigh and J. Kelly et al., 2003. Ferromagnetism in Mn- and Cr-implanted AlGaP. Solid-State Electron., 47: 1549-1552.
    CrossRef  |  Direct Link  |  

  734. Overberg, M.E., G.T. Thaler, R.M. Frazier, C.R. Abernathy and S.J. Pearton et al., 2003. Magnetic properties of Mn-implanted AlGaP alloys. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 2093-2097.
    CrossRef  |  Direct Link  |  

  735. Overberg, M.E., G.T. Thaler, R.M. Frazier, C.R. Abernathy and S.J. Pearton et al., 2003. Ferromagnetic semiconductors based upon AlGaP. J. Applied Phys., 93: 7861-7863.
    CrossRef  |  Direct Link  |  

  736. Overberg, M.E., G.T. Thaler, C.R. Abernathy, N.A. Theodoropoulou and K.T. McCarthy et al., 2003. Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy. J. Electron. Mater., 32: 298-306.
    CrossRef  |  Direct Link  |  

  737. Norton, D.P., S.J. Pearton, A.F. Hebard, N. Theodoropoulou, L.A. Boatner and R.G. Wilson, 2003. Ferromagnetism in Mn-implanted ZnO:Sn single crystals. Applied Phys. Lett., 82: 239-241.
    CrossRef  |  Direct Link  |  

  738. Norton, D.P., N.A. Theodoropoulou, A.F. Hebard, J.D. Budai, L.A. Boatner, S.J. Pearton and R.G. Wilson, 2003. Properties of Mn-implanted BaTiO3, SrTiO3 and KTaO3. Electrochem. Solid-State Lett., 6: G19-G21.
    CrossRef  |  Direct Link  |  

  739. Norton, D.P., M.E. Overberg, S.J. Pearton, K. Pruessner and J.D. Budai et al., 2003. Ferromagnetism in cobalt-implanted ZnO. Applied Phys. Lett., 83: 5488-5490.
    CrossRef  |  Direct Link  |  

  740. Nigam, S., J. Kim, F. Ren, G. Chung, M.F. MacMillan and S.J. Pearton, 2003. Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers. Electrochem. Solid-State Lett., 6: G4-G6.
    CrossRef  |  Direct Link  |  

  741. Nigam, S., J. Kim, B. Luo, F. Ren and G.Y. Chung et al., 2003. Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers. Solid-State Electron., 47: 1461-1464.
    CrossRef  |  Direct Link  |  

  742. Nigam, S., J. Kim, B. Luo, F. Ren and G.Y. Chung et al., 2003. Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers. Solid-State Electron., 47: 61-64.
    CrossRef  |  Direct Link  |  

  743. Nigam, S., J. Kim, B. Luo, F. Ren and G.Y. Chung et al., 2003. Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers. J. Electrochem. Soc., 150: G1-G5.
    CrossRef  |  Direct Link  |  

  744. Nigam, S., J. Kim, B. Luo, F. Ren and G.Y. Chung et al., 2003. Effect of contact geometry on 4H-SiC rectifiers with junction termination extension. Solid-State Electron., 47: 57-60.
    CrossRef  |  Direct Link  |  

  745. Moser, N.A., J.K. Gillespie, G.D. Via, A. Crespo and M.J. Yannuzzi et al., 2003. Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett., 83: 4178-4180.
    CrossRef  |  Direct Link  |  

  746. Mehandru, R., S. Kim, J. Kim, F. Ren and J.R. Lothian et al., 2003. Thermal simulations of high power, bulk GaN rectifiers. Solid-State Electron., 47: 1037-1043.
    CrossRef  |  Direct Link  |  

  747. Mehandru, R., B. Luo, J. Kim, F. Ren and B.P. Gila et al., 2003. AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. Applied Phys. Lett., 82: 2530-2532.
    CrossRef  |  Direct Link  |  

  748. Luo, B., R. Mehandru, J. Kim, F. Ren and B.P. Gila et al., 2003. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation. Solid-State Electron., 47: 1781-1786.
    CrossRef  |  Direct Link  |  

  749. Luo, B., R. Mehandru, J. Kim, F. Ren and B.P. Gila et al., 2003. High three-terminal breakdown voltage and output power of Sc/sub 2/O/sub 3/passivated AlGaN/GaN high electron mobility transistors. Electron. Lett., 39: 809-810.
    CrossRef  |  Direct Link  |  

  750. Luo, B., J. Kim, F. Ren, J.K. Gillespie and R.C. Fitch et al., 2003. Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., 82: 1428-1430.
    CrossRef  |  Direct Link  |  

  751. Luo, B., J. Kim, F. Ren, A.G. Baca and R.D. Briggs et al., 2003. Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs. Electrochem. Solid-State Lett., 6: G31-G33.
    CrossRef  |  Direct Link  |  

  752. Luo, B., F. Ren, R.C. Fitch, J.K. Gillespie and T. Jenkins et al., 2003. Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix-or W-based metallization. Applied Phys. Lett., 82: 3910-3912.
    CrossRef  |  Direct Link  |  

  753. Luo, B., F. Ren, K.K. Allums, B.P. Gila and A.H. Onstine et al., 2003. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Solid-State Electron., 47: 1015-1020.
    CrossRef  |  Direct Link  |  

  754. Lim, W.T., I.K. Baek, J.W. Lee, E.S. Lee and M.H. Jeon et al., 2003. Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO. Applied Phys. Lett., 83: 3105-3107.
    CrossRef  |  Direct Link  |  

  755. Lee, K.P., F. Ren, S.J. Pearton, A.M. Dabiran and P.P. Chow, 2003. Simulations of InGaN-base heterojunction bipolar transistors. Solid-State Electron., 47: 1009-1014.
    CrossRef  |  Direct Link  |  

  756. Lee, K.P., F. Ren, S.J. Pearton, A.M. Dabiran and P.P. Chow, 2003. Effects of base structure on performance of GaN-based heterojunction bipolar transistors. Solid-State Electron., 47: 1031-1036.
    CrossRef  |  Direct Link  |  

  757. Lee, K.P., A. Dabiran, P.P. Chow, S.J. Pearton and F. Ren, 2003. Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs. Solid-State Electron., 47: 969-974.
    CrossRef  |  Direct Link  |  

  758. Lee, K.P., A. Dabiran, A. Osinsky, P.P. Chow, S.J. Pearton and F. Ren, 2003. RF performance of GaN-based npn bipolar transistors. Solid-State Electron., 47: 1501-1506.
    CrossRef  |  Direct Link  |  

  759. Lee, J.W., R.J. Shul, G.A. Vawter, C.R. Abernathy, S.J. Pearton and Y.B. Hahn, 2003. Reactive ion beam etching of in-containing compound semiconductors in an inductively coupled Cl2/Ar plasma. Jpn. J. Applied Phys., 42: 38-43.
    CrossRef  |  Direct Link  |  

  760. Lee, J.S., Z.G. Khim, Y.D. Park, D.P. Norton and N.A. Theodoropoulou et al., 2003. Magnetic properties of Co-and Mn-implanted BaTiO3, SrTiO3 and KTaO3. Solid-State Electron., 47: 2225-2230.
    CrossRef  |  Direct Link  |  

  761. Lee, J.S., Z.G. Khim, Y.D. Park, D.P. Norton and J.D. Budai et al., 2003. Effects of Co implantation in BaTiO3, SrTiO3 and KTaO3. Electrochem. Solid-State Lett., 6: J1-J3.
    CrossRef  |  Direct Link  |  

  762. Lee, J.S., J.D. Lim, Z.G. Khim, Y.D. Park, S.J. Pearton and S.N.G. Chu, 2003. Magnetic and structural properties of Co, Cr, V ion-implanted GaN. J. Applied Phys., 93: 4512-4516.
    CrossRef  |  Direct Link  |  

  763. Kim, J., S. Nigam, F. Ren, D. Schoenfeld, G.Y. Chung and S.J. Pearton, 2003. High dose gamma-ray irradiation of SiC Schottky rectifiers. Electrochem. Solid-State Lett., 6: G105-G107.
    CrossRef  |  Direct Link  |  

  764. Kim, J., F. Ren, G.T. Thaler, R. Frazier and C.R. Abernathy et al., 2003. Vertical and lateral mobilities in n-(Ga,Mn)N. Applied Phys. Lett., 82: 1565-1567.
    CrossRef  |  Direct Link  |  

  765. Kim, J., F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, 2003. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. Applied Phys. Lett., 82: 739-741.
    CrossRef  |  Direct Link  |  

  766. Kim, J., F. Ren, A.G. Baca, R.D. Briggs and S.J. Pearton, 2003. High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC. Solid-State Electron., 47: 1345-1350.
    CrossRef  |  Direct Link  |  

  767. Kim, J., F. Ren, A.G. Baca and S.J. Pearton, 2003. Thermal stability of WSix and W Schottky contacts on n-GaN. Applied Phys. Lett., 82: 3263-3265.
    CrossRef  |  Direct Link  |  

  768. Kim, J., B.P. Gila, G.Y. Chung, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Hydrogen-sensitive GaN schottky diodes. Solid State Electron, 47: 1069-1073.
    CrossRef  |  

  769. Kim, J., B.P. Gila, C.R. Abernathy, G.Y. Chung, F. Ren and S.J. Pearton, 2003. Comparison of Pt/GaN and Pt/4H-SiC gas sensors. Solid-State Electron., 47: 1487-1490.
    CrossRef  |  Direct Link  |  

  770. Kim, D.H., J.S. Yang, Y.S. Kim, D.W. Kim and T.W. Noh et al., 2003. Superparamagnetism in Co-ion-implanted anatase TiO2 thin films and effects of postannealing. Applied Phys. Lett., 83: 4574-4576.
    CrossRef  |  Direct Link  |  

  771. Kelly, F., R. Chodelka, R.K. Singh, S.J. Pearton, M. Overberg and J. Fitz-Gerald, 2003. GaN films annealed under high pressure. Solid-State Electron., 47: 1081-1087.
    CrossRef  |  Direct Link  |  

  772. Kelly, F., D.R. Gilbert, R. Chodelka, R.K. Singh and S. Pearton, 2003. Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process. Solid-State Electron., 47: 1027-1030.
    CrossRef  |  Direct Link  |  

  773. Kang, B.S., S. Kim, J. Kim, F. Ren and K. Baik et al., 2003. Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett., 83: 4845-4847.
    CrossRef  |  Direct Link  |  

  774. Jung, P.G., W.T. Lim, G.S. Cho, M.H. Jeon and J.W. Lee et al., 2003. Effect on 4H-SiC Schottky rectifiers of Ar discharges generated in a planar inductively coupled plasma source. J. Semicond. Technol. Sci., 3: 21-26.
    Direct Link  |  

  775. Irokawa, Y., J. Kim, F. Ren, K.H. Baik and B.P. Gila et al., 2003. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. Applied Phys. Lett., 83: 4987-4989.
    CrossRef  |  Direct Link  |  

  776. Irokawa, Y., B. Luo, J. Kim, J.R. LaRoche and F. Ren et al., 2003. Current-voltage and reverse recovery characteristics of bulk GaN pin rectifiers. Applied Phys. Lett., 83: 2271-2273.
    CrossRef  |  Direct Link  |  

  777. Ip, K., S. Nigam, K.H. Baik, F. Ren, G.Y. Chung, B.P. Gila and S.J. Pearton, 2003. Stability of SiC Schottky rectifiers to rapid thermal annealing. J. Electrochem. Soc., 150: G293-G296.
    CrossRef  |  Direct Link  |  

  778. Ip, K., R.M. Frazier, Y.W. Heo, D.P. Norton and C.R. Abernathy et al., 2003. Ferromagnetism in Mn-and Co-implanted ZnO nanorods. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 1476-1481.
    CrossRef  |  Direct Link  |  

  779. Ip, K., M.E. Overberg, Y.W. Heo, D.P. Norton and S.J. Pearton et al., 2003. Hydrogen incorporation, diffusivity and evolution in bulk ZnO. Solid-State Electron., 47: 2255-2259.
    CrossRef  |  Direct Link  |  

  780. Ip, K., M.E. Overberg, Y.W. Heo, D.P. Norton and S.J. Pearton et al., 2003. Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO. Applied Phys. Lett., 82: 385-387.
    CrossRef  |  Direct Link  |  

  781. Ip, K., M.E. Overberg, K.W. Baik, R.G. Wilson and S.O. Kucheyev et al., 2003. ICP dry etching of ZnO and effects of hydrogen. Solid-State Electron., 47: 2289-2294.
    CrossRef  |  Direct Link  |  

  782. Ip, K., K.H. Baik, Y.W. Heo, D.P. Norton and S.J. Pearton et al., 2003. Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-Zno. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 2378-2381.
    CrossRef  |  Direct Link  |  

  783. Heo, Y.W., S.J. Park, K. Ip, S.J. Pearton and D.P. Norton, 2003. Transport properties of phosphorus-doped ZnO thin films. Applied Phys. Lett., 83: 1128-1130.
    CrossRef  |  Direct Link  |  

  784. Gillespie, J.K., R.C. Fitch, N. Moser, T. Jenkins and J. Sewell et al., 2003. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers. Solid-State Electron., 47: 1859-1862.
    CrossRef  |  Direct Link  |  

  785. Gila, B.P., J. Kim, B. Luo, A. Onstine and W. Johnson et al., 2003. Advantages and limitations of MgO as a dielectric for GaN. Solid-State Electron., 47: 2139-2142.
    CrossRef  |  Direct Link  |  

  786. Gila, B.P., A.H. Onstine, J. Kim, K.K. Allums, F. Ren, C.R. Abernathy and S.J. Pearton, 2003. Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 2368-2370.
    CrossRef  |  Direct Link  |  

  787. Frazier, R.M., J. Stapleton, G.T. Thaler, C.R. Abernathy and S.J. Pearton et al., 2003. Properties of Co-, Cr-, or Mn-implanted AlN. J. Applied Phys., 94: 1592-1596.
    CrossRef  |  Direct Link  |  

  788. Frazier, R.M., G.T. Thaler, C.R. Abernathy, S.J. Pearton and M.L. Nakarmi et al., 2003. Transition metal ion implantation into AlGaN. J. Applied Phys., 94: 4956-4960.
    CrossRef  |  Direct Link  |  

  789. Frazier, R., G. Thaler, M. Overberg, B. Gila, C.R. Abernathy and S.J. Pearton, 2003. Indication of hysteresis in AlMnN. Applied Phys. Lett., 83: 1758-1760.
    CrossRef  |  Direct Link  |  

  790. Dang, G.T., R. Mehandru, B. Luo, F. Ren and W.S. Hobson et al., 2003. Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers. J. Lightwave Technol., 21: 1020-1031.
    CrossRef  |  Direct Link  |  

  791. Cho, H., S.C. Ryu, J.K. Kim, K.B. Shim, K.H. Auh and S.J. Pearton, 2003. Anisotropic pattern transfer in GaN by photo-enhanced wet etching. J. Ceramic Proces. Res., 4: 131-134.

  792. Cho, H., K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Temperature dependence of MgO/GaN MOSFET performance. Solid-State Electron., 47: 1601-1604.
    CrossRef  |  Direct Link  |  

  793. Cho, H., K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Simulated high-temperature characteristics of Sc2O3/GaN MOSFETs. Electrochem. Solid-State Lett., 6: G149-G151.
    CrossRef  |  Direct Link  |  

  794. Cho, H., K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Influence of gate oxide thickness on Sc2O3/GaN MOSFETs. Solid-State Electron., 47: 1757-1761.
    CrossRef  |  Direct Link  |  

  795. Cho, H., K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Gate breakdown characteristics of MgO/GaN MOSFETs. Solid-State Electron., 47: 1597-1600.
    CrossRef  |  Direct Link  |  

  796. Cho, H., K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, 2003. Effects of oxide thickness and gate length on DC performance of submicrometer MgO/GaN MOSFETs. Electrochem. Solid-State Lett., 6: G119-G121.
    CrossRef  |  Direct Link  |  

  797. Burdett, W.C., O. Lopatiuk, A. Osinsky, S.J. Pearton and L. Chernyak, 2003. The optical signature of electron injection in p-(Al)GaN. Superlattices Microstruct., 34: 55-62.
    CrossRef  |  Direct Link  |  

  798. Baik, K.H., Y. Irokawa, J. Kim, J.R. LaRoche and F. Ren et al., 2003. 160-A bulk GaN Schottky diode array. Applied Phys. Lett., 83: 3192-3194.
    CrossRef  |  Direct Link  |  

  799. Baik, K.H., Y. Irokawa, F. Ren, S.J. Pearton, S.S. Park and Y.J. Park, 2003. Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers. Solid-State Electron., 47: 1533-1538.
    CrossRef  |  Direct Link  |  

  800. Baik, K.H., Y. Irokawa, F. Ren, S.J. Pearton, S.S. Park and Y.J. Park, 2003. Design of junction termination structures for GaN Schottky power rectifiers. Solid-State Electron., 47: 975-979.
    CrossRef  |  Direct Link  |  

  801. Baik, K.H., R.M. Frazier, G.T. Thaler, C.R. Abernathy and S.J. Pearton et al., 2003. Effects of hydrogen incorporation in GaMnN. Applied Phys. Lett., 83: 5458-5460.
    CrossRef  |  Direct Link  |  

  802. Baek, I.K., W.T. Lim, J.W. Lee, M.H. Jeon, G.S. Cho and S.J. Pearton, 2003. Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma. J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenomena, 21: 2487-2491.
    CrossRef  |  Direct Link  |  

  803. Abernathy, C.R., B.P. Gila, A.H. Onstine, S.J. Pearton and J. Kim et al., 2003. Progress in novel oxides for gate dielectrics and surface passivation of GaN/AlGaN heterostructure field effect transistors. J. Semicond. Technol. Sci., 3: 13-20.
    Direct Link  |  

  804. Zhang, A.P., G. Dang, F. Ren, J. Han and C. Monier et al., 2002. GaN pnp BJTs operated to 250°C. Solid-State Electron., Vol. 46. .

  805. Zhang, A.P., F. Ren, T.J. Anderson, C.R. Abernathy and R.K. Singh et al., 2002. High-power GaN electronic devices. Crit. Rev. Solid State Mater. Sci., 27: 1-71.
    CrossRef  |  Direct Link  |  

  806. Trivedi, V. and S.J. Pearton, 2002. Evaluation of RTP systems for use in CMOS fabrication. Solid-State Elect., Vol. 46. .

  807. Theodoropoulou, N., A.F. Hebard, S.N.G. Chu, M.E. Overberg and C.R. Abernathy et al., 2002. Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors. J. Applied Phys., Vol. 91. 10.1063/1.1452750.
    CrossRef  |  Direct Link  |  

  808. Theodoropoulou, N., A.F. Hebard, S.N.G. Chu, M.E. Overberg and C.R. Abernathy et al., 2002. Magnetic and structural properties of Fe, Ni and Mn-implanted SiC. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, Vol. 20. 10.1116/1.1465447.
    CrossRef  |  Direct Link  |  

  809. Theodoropoulou, N., A.F. Hebard, M.E. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu and R.G. Wilson, 2002. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Phys. Rev. Lett., Vol. 89, No. 10. 10.1103/PhysRevLett.89.107203.
    CrossRef  |  Direct Link  |  

  810. Thaler, G., M.E. Overberg, B. Gila, R. Frazier and C.R. Abernathy et al., 2002. Magnetic properties of n-GaMnM thin films. Applied Phys. Lett., 80. .

  811. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, N.Y. Pashkova and J. Kim et al., 2002. Electrical and optical properties of GaN films implanted with Mn and Co. J. Applied Phys., 92: 3130-3136.
    CrossRef  |  Direct Link  |  

  812. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, J. Kim and B. Luo et al., 2002. Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing. J. Applied Phys., Vol. 91. 10.1063/1.1465119.
    CrossRef  |  Direct Link  |  

  813. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova and B. Luo et al., 2002. Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. Applied Phys. Lett., Vol. 80. 10.1063/1.1477273.
    CrossRef  |  Direct Link  |  

  814. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.A. Shlensky and M.G. Mil'vidskii et al., 2002. Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by Ar-implantation-induced partial disordering. J. Elect. Mater., 31: 384-390.
    CrossRef  |  Direct Link  |  

  815. Polyakov, A.Y., A.V. Govorkov, N.B. Smirnov, N.Y. Pashkova and G.T. Thaler et al., 2002. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. J. Applied Phys., 92: 4989-4993.
    CrossRef  |  Direct Link  |  

  816. Pearton, S.J., N. Theodoropoulou, M.E. Overberg, C.R. Abernathy and A.F. Hebard et al., 2002. Characterization of Ni-implanted GaN and SiC. Mater. Sci. Eng.: B., 94: 159-163.
    CrossRef  |  Direct Link  |  

  817. Pearton, S.J., M.E. Overberg, G. Thaler, C.R. Abernathy and N. Theodoropoulou et al., 2002. Characterization of high dose Mn, Fe and Ni implantation into p-GaN. J. Vacuum Sci. Technol. A: Vacuum, Surfaces Films, Vol. 20. 10.1116/1.1465449.
    CrossRef  |  Direct Link  |  

  818. Pearton, S.J., M.E. Overberg, C.R. Abernathy, N.A. Theodoropoulou and A.F. Hebard et al., 2002. Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN2. J. Applied Phys., 92: 2047-2051.
    CrossRef  |  Direct Link  |  

  819. Pearton, S.J., K.P. Lee, M.E. Overberg, C.R. Abernathy and N. Theodoropoulou et al., 2002. Magnetism in SiC implanted with high doses of Fe and Mn. J. Elect. Mater., 31: 336-339.
    CrossRef  |  Direct Link  |  

  820. Pearton, S.J., C.R. Abernathy, M.E. Overberg, G.T. Thaler and A.H. Onstine et al., 2002. New applications for GaN. Mater. Today, 1: 24-31.

  821. Pearton, S.J., C.R. Abernathy, B.P. Gila, A.H. Onstine and M.E. Overberg et al., 2002. Recent advances in gate dielectrics and polarised light emission from GaN. OptoElectron. Rev., 10: 231-236.
    Direct Link  |  

  822. Overberg, M.E., N. Theodoropoulou, S.N.G. Chu, S.J. Pearton and C.R. Abernathy et al., 2002. Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics. Mater. Sci. Eng.: B, 94: 14-19.
    CrossRef  |  Direct Link  |  

  823. Overberg, M.E., B.P. Gila, G.T. Thaler, C.R. Abernathy and S.J. Pearton et al., 2002. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 20. 10.1116/1.1477424.
    CrossRef  |  Direct Link  |  

  824. Norton, D.P., S.J. Pearton, H.M. Christen and J.D. Budai, 2002. Hydrogen-assisted pulsed-laser deposition of epitaxial CeO 2 films on (001) InP. Applied Phys. Lett., Vol. 80. 10.1063/1.1431696.
    CrossRef  |  Direct Link  |  

  825. Norasetthekul, S., P.Y. Park, K.H. Baik, K.P. Lee and J.H. Shin et al., 2002. Etch characteristics of HfO2 films on Si substrates. Applied Surface Sci., 187: 75-81.
    CrossRef  |  Direct Link  |  

  826. Nigam, S., J. Kim, F. Ren, G.Y. Chung and M.F. MacMillan et al., 2002. High energy proton irradiation effects on SiC Schottky rectifiers. Applied Phys. Lett., 81: 2385-2387.
    CrossRef  |  Direct Link  |  

  827. Mehandru, R., G. Dang, S. Kim, F. Ren and W.S. Hobson et al., 2002. Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design. Solid-State Elect., 46: 699-704.
    CrossRef  |  Direct Link  |  

  828. Mehandru, R., B.P. Gila, J. Kim and J.W. Johnson et al., 2002. Electrical characterization of GaN MOS diodes using Sc2O3 as the gate oxide. Electrochem. Solid-State Lett., Vol. 5. .

  829. Maynard, R.K., S.J. Pearton and R.K. Singh, 2002. Effect of CVD temperature on orientation, roughness and chemical mechanical polish removal rate of w thin films. J. Electrochem. Soc., 149: G648-G650.
    CrossRef  |  Direct Link  |  

  830. Luo, B., R.M. Mehandru, J. Kim, F. Ren and B.P. Gila et al., 2002. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS. Solid-State Electron., 46: 2185-2190.
    CrossRef  |  Direct Link  |  

  831. Luo, B., R. Mehandru, J. Kim, F. Ren and B.P. Gila et al., 2002. Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. J. Electrochem. Soc., 149: G613-G619.
    CrossRef  |  Direct Link  |  

  832. Luo, B., K. Baik, F. Ren, S.J. Pearton and K.D. Mackenzie, 2002. Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers. Solid-State Elect., 46: 1453-1457.
    CrossRef  |  Direct Link  |  

  833. Luo, B., J.W. Johnson, J. Kim, R. Mehandru and F. Ren et al., 2002. Influence of MgO passivation on AlGaN/GaN HEMTs. Applied Phys. Lett., Vol. 80. .

  834. Luo, B., J.W. Johnson, F. Ren, K.W. Baik and S.J. Pearton, 2002. Effect of PECVD of SiNx on n-GaN Schottky rectifiers. Solid-State Elect., Vol. 46. .

  835. Luo, B., J.W. Johnson, F. Ren, K.K. Allums and C.R. Abernathy et al., 2002. Proton and gamma-ray irradiation effects on InGaP/GaAs heterojunction bipolar transistors. J. Electrochem. Soc., 149: G213-G217.
    CrossRef  |  Direct Link  |  

  836. Luo, B., J.W. Johnson, F. Ren, K.K. Allums and C.R. Abernathy et al., 2002. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 80. 10.1063/1.1445809.
    CrossRef  |  Direct Link  |  

  837. Luo, B., J.W. Johnson, F. Ren, K.K. Allums and C.R. Abernathy et al., 2002. High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors. J. Elect. Mater., 31: 437-441.
    CrossRef  |  Direct Link  |  

  838. Luo, B., J.W. Johnson, F. Ren, K.K. Allums and C.R. Abernathy et al., 2002. Effects of high energy proton irradiation on DC performance of GaAs metal-semiconductor field effect transistors. J. Electrochem. Soc., 149: G236-G238.
    CrossRef  |  Direct Link  |  

  839. Luo, B., J.W. Johnson, B. Gila, A. Onstine and C.R. Abernathy et al., 2002. Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3. Solid-State Elect., 46: 467-476.
    CrossRef  |  Direct Link  |  

  840. Luo, B., J. Kim, R. Mehandru, F. Ren and K.P. Lee et al., 2002. Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. Solid-State Elect., 46: 1345-1349.
    CrossRef  |  Direct Link  |  

  841. Luo, B., J. Johnson, O. Kryliouk, F. Ren and S.J. Pearton et al., 2002. High breakdown MIM structures on bulk AlN. Solid-State Elect., Vol. 46. .

  842. Luo, B., F. Ren, C.S. Wu, S.J. Pearton, C.R. Abernathy and K.D. Mackenzie, 2002. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs. Solid-State Elect., 46: 1359-1365.
    CrossRef  |  Direct Link  |  

  843. Lobbins, J.M., S.J. Pearton and F. Ren, 2002. Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability. Solid-State Elect., 46: 1367-1373.
    CrossRef  |  Direct Link  |  

  844. Lee, K.P., S.J. Pearton, M.E. Overberg, C.R. Abernathy and R.G. Wilson et al., 2002. Magnetic effects of direct ion implantation of Mn and Fe into p-GaN. J. Elect. Mater., 31: 411-415.
    CrossRef  |  Direct Link  |  

  845. Lee, J.W., P.G. Jung, M. Devre, R. Westermann and S.J. Pearton, 2002. Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers. Solid-State Elect., 46: 685-688.
    CrossRef  |  Direct Link  |  

  846. Lee, J.W., M. Jeon, H. Kim, S. Chang and K. Kim et al., 2002. Development of advanced plasma process with an OES-based end-point technique for etching of AlGaAs over GaAs in manufacture of HBTs. Solid-State Elect., Vol. 46. .

  847. Kim, J., R. Mehandru, B. Luo, F. Ren and B.P. Gila et al., 2002. Charge pumping in Sc2O3/GaN gated mos diodes. Electron. Lett., 38: 920-921.
    CrossRef  |  Direct Link  |  

  848. Kim, J., R. Mehandru, B. Luo, F. Ren and B.P. Gila et al., 2002. Inversion behavior in Sc2O3/GaN gated diodes. Applied Phys. Lett., Vol. 81. 10.1063/1.1492852.
    CrossRef  |  Direct Link  |  

  849. Kim, J., R. Mehandru, B. Luo, F. Ren and B.P. Gila et al., 2002. Characteristics of MgO/GaN gate-controlled metal-oxide-semiconductor diodes. Applied Phys. Lett., Vol. 80. 10.1063/1.1487903.
    CrossRef  |  Direct Link  |  

  850. Kim, J., F. Ren, G. Thaler, M.E. Overberg, C.R. Abernathy, S.J. Pearton and R.G. Wilson, 2002. Pt Schottky contacts to n-(Ga,Mn)N. Applied Phys. Lett., Vol. 81. 10.1063/1.1496130.
    CrossRef  |  Direct Link  |  

  851. Kim, J., F. Ren, A.Y. Polyakov, N.B. Smirnov and A.V. Govorkov et al., 2002. Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy. Electrochem. Solid-State Lett., 5: G103-G105.
    CrossRef  |  Direct Link  |  

  852. Kim, J., B.P. Gila, R. Mehandru, B. Luo and A.H. Onstine et al., 2002. High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes. Electrochem. Solid-State Lett., 5: G57-G59.
    Direct Link  |  

  853. Kim, J., B. Gila, R. Mehandru, J.W. Johnson and J.H. Shin et al., 2002. Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide. J. Electrochem. Soc., 149: G482-G484.
    CrossRef  |  Direct Link  |  

  854. Johnson, J.W., J. Han, A.G. Baca, R. Briggs and R.J. Shul et al., 2002. Comparison of AlGaN/GaN HEMTs grown on SIC or sapphire. Solid-State Elect., Vol. 46. .

  855. Johnson, J.W., F. Ren, S.J. Pearton, A.G. Baca, J. Han, A.M. Dabiran and P.P. Chow, 2002. Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. J. Nanosci. Nanotechnol., 2: 325-332.
    CrossRef  |  Direct Link  |  

  856. Johnson, J.W., F. Ren, A.G. Baca, R.D. Briggs and R.J. Shul et al., 2002. MOCVD-grown HEMTs on Al2O3 substrates. Solid-State Elect., 46: 1193-1204.
    CrossRef  |  Direct Link  |  

  857. Johnson, J.W., B. Lou, F. Ren, D. Palmer and S.J. Pearton et al., 2002. 1.6 A GaN Schottky rectifiers on bulk GaN substrates. Solid-State Elect., 46: 911-913.
    CrossRef  |  Direct Link  |  

  858. Johnson, J.W., A.P. Zhang, W.B. Luo, F. Ren and S.J. Pearton et al., 2002. Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers. IEEE Trans. Elect. Devices, 49: 32-36.
    CrossRef  |  Direct Link  |  

  859. Ivill, M., M. Patel, K. Kim, H. Bae, S.J. Pearton, D.P. Norton and J.D. Budai, 2002. Epitaxial growth of CeO2 on (100) InP using reactive rf magnetron sputtering. Applied Phys. A, 75: 699-702.
    CrossRef  |  Direct Link  |  

  860. Ip, K., S. Nigam, K.P. Lee, K.H. Baik and G.Y. Chung et al., 2002. Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers. J. Vacuum Sci. Technol. B, 20: 2299-2302.
    CrossRef  |  Direct Link  |  

  861. Ip, K., M.E. Overberg, Y.W. Heo, D.P. Norton and S.J. Pearton et al., 2002. Thermal stability of ion-implanted hydrogen in ZnO. Applied Phys. Lett., 81: 3996-3998.
    CrossRef  |  Direct Link  |  

  862. Ip, K., K.H. Baik, M.E. Overberg, E.S. Lambers and Y.W. Heo et al., 2002. Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO. Applied Phys. Lett., 81: 3546-3548.
    CrossRef  |  Direct Link  |  

  863. Ip, K., K.H. Baik, B. Luo, F. Ren and S.J. Pearton et al., 2002. High current bulk GaN Schottky rectifiers. Solid-State Electron., 46: 2169-2172.
    CrossRef  |  Direct Link  |  

  864. Harris, K.K., B.P. Gila, J. Deroaches, K.N. Lee and J.D. MacKenzie et al., 2002. Microstructure and thermal stability of aluminum nitride thin films deposited at low temperature on silicon. J. Electrochem. Soc., 19: G128-G130.
    CrossRef  |  Direct Link  |  

  865. Gillespie, J.K., R.C. Fitch, J. Sewell, R. Dettmer and G.D. Via et al., 2002. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Lett., 23: 505-507.
    CrossRef  |  Direct Link  |  

  866. Frei, M.R., T.Y. Chiu, C.R. Abernathy, F. Ren and T.R. Fullowan et al., 2002. Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation. Solid-State Elect., 46: 1301-1305.
    CrossRef  |  Direct Link  |  

  867. Dang, G., B. Luo, F. Ren, W.S. Hobson and J. Lopata et al., 2002. Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers. Solid-State Elect., 46: 1247-1249.
    CrossRef  |  Direct Link  |  

  868. Baik, K.H., Y. Irokawa, F. Ren, S.J. Pearton, S.S. Park and S.K. Lee, 2002. Edge termination design and simulation for bulk GaN rectifiers. J. Vacuum Sci. Technol. B, 20: 2169-2172.
    CrossRef  |  Direct Link  |  

  869. Baik, K.H., B. Luo, S.J. Pearton and F. Ren, 2002. Influence of SiO2 PECVD layers on p-GaN rectifiers. Solid-State Elect., 46: 803-806.
    CrossRef  |  Direct Link  |  

  870. Baik, K.H., B. Luo, J. Kim, S.J. Pearton and F. Ren, 2002. Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation. Solid-State Elect., 46: 1459-1462.
    CrossRef  |  Direct Link  |  

  871. Baca, A.G., C. Monier, P.C. Chang, R.D. Briggs, M.G. Armendariz and S.J. Pearton, 2002. Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors. Solid-State Elect., 46: 797-801.
    CrossRef  |  Direct Link  |  

  872. Zhang, A.P., J.W. Johnson, F. Ren, J. Han and A.Y. Polyakov et al., 2001. Lateral AlxGa 1-x N power rectifiers with 9.7 kV reverse breakdown voltage. Applied Phys. Lett., 78: 823-825.
    CrossRef  |  Direct Link  |  

  873. Zhang, A.P., J.W. Johnson, B. Luo, F. Ren and S.J. Pearton et al., 2001. Vertical and lateral GaN rectifiers on free-standing GaN substrates. Applied Phys. Lett., Vol. 79. 10.1063/1.1400771.
    CrossRef  |  Direct Link  |  

  874. Zhang, A.P., J. Han, F. Ren, K.E. Waldrip and C.R. Abernathy et al., 2001. GaN bipolar junction transistors with regrown emitters. Electrochem. Solid-State Lett., 4: G39-G41.
    CrossRef  |  Direct Link  |  

  875. Zhang, A.P., B. Luo, J.W. Johnson, F. Ren, J. Han and S.J. Pearton, 2001. Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1 Ga0.9 N/GaN superlattices. Applied Phys. Lett., Vol. 79. 10.1063/1.1423387.
    CrossRef  |  Direct Link  |  

  876. Zhan, A.P., G.T. Dang, F. Ren, H. Cho and K.P. Lee et al., 2001. Comparison of GaN pin and Schottky rectifier performance. IEEE Trans. Elect. Dev., 48: 407-411.
    CrossRef  |  Direct Link  |  

  877. Theodoropoulou, N., M.E. Overberg, S.N.G. Chu, A.F. Hebard and C.R. Abernathy et al., 2001. Magnetic properties of Mn and Fe‐implanted p‐GaN. Phys. Status Solidi, B., 228: 337-340.
    CrossRef  |  Direct Link  |  

  878. Theodoropoulou, N., K.P. Lee, M.E. Overberg, S.N.G. Chu and A.F. Hebard et al., 2001. Nanoscale magnetic regions formed in GaN implanted with Mn. J. Nanosci. Nanotechnol., 1: 101-106.
    CrossRef  |  Direct Link  |  

  879. Theodoropoulou, N., A.F. Hebard, S.N.G. Chu, M.E. Overberg and C.R. Abernathy et al., 2001. Magnetic properties of Fe-and Mn-implanted SiC. Electrochem. Solid-State Lett., 4: G119-G112.
    CrossRef  |  Direct Link  |  

  880. Theodoropoulou, N., A.F. Hebard, S.N.G. Chu, M.E. Overberg and C.R. Abernathy et al., 2001. Characterization of high dose Fe implantation into p-GaN. Applied Phys. Lett., Vol. 79. 10.1063/1.1420406.
    CrossRef  |  Direct Link  |  

  881. Theodoropoulou, N., A.F. Hebard, M.E. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu and R.G. Wilson, 2001. Magnetic and structural properties of Mn-implanted GaN. Applied Phys. Lett., Vol. 78. 10.1063/1.1376659.
    CrossRef  |  Direct Link  |  

  882. Shul, R.J., L. Zhang, A.G. Baca, C.G. Willison and J. Han et al., 2001. Inductively-coupled high-density plasma-induced damage of GaN MESFETs. Solid-State Electron., 45: 13-17.
    CrossRef  |  Direct Link  |  

  883. Polyakov, A.Y., N.B. Smirnov, S.J. Pearton, F. Ren and B. Theys et al., 2001. Fermi level dependence of hydrogen diffusivity in GaN. Applied Phys. Lett., Vol. 79. 10.1063/1.1404398.
    CrossRef  |  Direct Link  |  

  884. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Osinsky and P.E. Norris et al., 2001. Electronic states in modulation doped p-AlGaN/GaN superlattices. J. Applied Phys., Vol. 90. 10.1063/1.1405819.
    CrossRef  |  Direct Link  |  

  885. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.V. Osinsky and P.E. Norris et al., 2001. Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices. Applied Phys. Lett., 10.1063/1.1429754.
    CrossRef  |  Direct Link  |  

  886. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.P. Zhang and F. Ren et al., 2001. Electrical properties and spectra of deep centers in GaN pin rectifier structures. J. Electron. Mater., 30: 147-155.
    CrossRef  |  Direct Link  |  

  887. Pearton, S.J., F. Ren, A.P. Zhang, G. Dang and X.A. Cao et al., 2001. GaN electronics for high power, high temperature applications. Mater. Sci. Eng.: B, 82: 227-231.
    CrossRef  |  Direct Link  |  

  888. Park, P.Y., S. Norasetthekul, K.P. Lee, K.H. Baik and B.P. Gila et al., 2001. Wet and dry etching of Sc2O3. Applied Surface Sci., 185: 52-59.
    CrossRef  |  Direct Link  |  

  889. Overberg, M.E., C.R. Abernathy, S.J. Pearton, N.A. Theodoropoulou, K.T. McCarthy and A.F. Hebard, 2001. Indication of ferromagnetism in MBE-derived n-type GaMnN. Applied Phys. Lett., Vol. 79. .

  890. Overberg, M.E., B.P. Gila, C.R. Abernathy, S.J. Pearton and N.A. Theodoropoulou et al., 2001. Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy. Applied Phys. Lett., Vol. 79. 10.1063/1.1416472.
    CrossRef  |  Direct Link  |  

  891. Overberg, M., K.N. Lee, C.R. Abernathy, S.J. Pearton, W.S. Hobson, R.G. Wilson and J.M. Zavada, 2001. Characterization and annealing of Eu-doped GaN. Mater. Sci. Eng.: B, 81: 150-152.
    CrossRef  |  Direct Link  |  

  892. Overberg, M., C.R. Abernathy, J.D. MacKenzie, S.J. Pearton, R.G. Wilson and J.M. Zavada, 2001. Effect of carbon doping on GaN: Er. Mater. Sci. Eng.: B, 81: 121-126.
    CrossRef  |  Direct Link  |  

  893. Norasetthekul, S., P.Y. Park, K.H. Baik, K.P. Lee and J.H. Shin et al., 2001. Dry etch chemistries for TiO2 thin films. Applied Surface Sci., 185: 27-33.
    CrossRef  |  Direct Link  |  

  894. Monier, C., F. Ren, J. Han, P.C. Chang and R.J. Shul et al., 2001. Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design. IEEE Trans. Elect. Devices, 48: 424-432.
    CrossRef  |  Direct Link  |  

  895. Monier, C., A.G. Baca, P.C. Chang, N.Y. Li, H.Q. Hou, F. Ren and S.J. Pearton, 2001. Pnp InGaAsN-based HBT with graded base doping. Elect. Lett., 37: 198-199.
    CrossRef  |  Direct Link  |  

  896. Luo, B., K. Ip, F. Ren, K.P. Lee, S.J. Pearton and C.R. Abernathy, 2001. Hydrogenation effects on AlGaAs/GaAs HBTs. Solid-State Elect., Vol. 45. .

  897. Luo, B., J.W. Johnson, F. Ren, K.K. Allums and C.R. Abernathy et al., 2001. DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Applied Phys. Lett., Vol. 79. 10.1063/1.1408606.
    CrossRef  |  Direct Link  |  

  898. Luo, B., J.W. Johnson, F. Ren, K.H. Baik and S.J. Pearton, 2001. Electrical effects of plasma enhanced chemical vapor deposition of SiN x on GaAs Schottky rectifiers. J. Applied Phys., Vol. 90. 10.1063/1.1410323.
    CrossRef  |  Direct Link  |  

  899. Luo, B., J.W. Johnson, D. Schoenfeld, S.J. Pearton and F. Ren, 2001. Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures. Solid-State Elect., 45: 1149-1152.
    CrossRef  |  Direct Link  |  

  900. Luo, B., G. Dang, A.P. Zhang, F. Ren and J. Lopata et al., 2001. p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers. J. Electrochem. Soc., 148: G676-G679.
    CrossRef  |  Direct Link  |  

  901. Luo, B., F. Ren, K.P. Lee, S.J. Pearton and C.S. Wu et al., 2001. Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors. Solid-State Elect., 45: 1613-1624.
    CrossRef  |  Direct Link  |  

  902. Leerungnawarat, P., K.P. Lee, S.J. Pearton, F. Ren and S.N.G. Chu, 2001. Comparison of F2 plasma chemistries for deep etching of SiC. J. Electron. Mater., 30: 202-206.
    CrossRef  |  Direct Link  |  

  903. Lee, K.P., A.P. Zhang, G. Dang, F. Ren and J. Han et al., 2001. Process development for small-area GaN/AlGaN heterojunction bipolar transistors. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, Vol. 19. 10.1116/1.1330260.
    CrossRef  |  Direct Link  |  

  904. Lee, K.P., A. Zhang, G. Dang, F. Ren and J. Han et al., 2001. Self-aligned process for emitter and base regrowth GaN HBTs and BJTs. Solid-State Electron., 45: 243-247.
    CrossRef  |  Direct Link  |  

  905. Lee, J.W., M.H. Jeon, M. Devre, K.D. Mackenzie and D. Johnson et al., 2001. Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs. Solid-State Elect., 45: 1683-1686.
    CrossRef  |  Direct Link  |  

  906. Lee, J.W., M.H. Jeon, G.S. Cho, H.C. Yim and S.K. Chang et al., 2001. Utilization of optical emission spectroscopy for end-point detection during AlGaAs/GaAs and InGaP/GaAs etching in BCl3/N2 inductively coupled plasmas. J. Electrochem. Soc., 148: G472-G474.
    CrossRef  |  Direct Link  |  

  907. Kucheyev, S.O., J.S. Williams, J. Zou, S.J. Pearton and Y. Nakagawa, 2001. Implantation-produced structural damage in Inx Ga1-xN. Applied Phys. Lett., Vol. 79. 10.1063/1.1388881.
    CrossRef  |  Direct Link  |  

  908. Kucheyev, S.O., J.S. Williams and S.J. Pearton, 2001. Ion implantation into GaN. Mater. Sci. Eng.: R: Rep., 33: 51-108.
    CrossRef  |  Direct Link  |  

  909. Kent, D.G., M.E. Overberg and S.J. Pearton, 2001. Co-implantation of Be+ O and Mg+ O into GaN. J. Applied Phys., Vol. 90. 10.1063/1.1402668.
    CrossRef  |  Direct Link  |  

  910. Kent, D.G., K.P. Lee, A.P. Zhang, B. Luo and M.E. Overberg et al., 2001. Effect of N2 plasma treatments on dry etch damage in n-and p-type GaN. Solid-State Electron., 45: 467-470.
    CrossRef  |  

  911. Kent, D.G., K.P. Lee, A.P. Zhang, B. Luo and M.E. Overberg et al., 2001. Electrical effects of N2 plasma exposure on dry-etch damage in p-and n-GaN Schottky diodes. Solid-State Elect., 45: 1837-1842.
    CrossRef  |  Direct Link  |  

  912. Johnson, J.W., B.P. Gila, B. Luo, K.P. Lee and C.R. Abernathy et al., 2001. SiO2 /Gd2O3/GaN MOSFETs. J. Electrochem. Soc. 148. .

  913. Johnson, J.W., A.G. Baca, R.D. Briggs, R.J. Shul and J.R. Wendt et al., 2001. Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE. Solid-State Elect., 45: 1979-1985.
    CrossRef  |  Direct Link  |  

  914. Johnson, J., J.R. LaRoch, F. Ren, B.P. Gila and M.E. Overberg et al., 2001. Schottky rectifiers fabricated on free-standing GaN substrates. Solid-State Electron., 45: 405-410.
    CrossRef  |  Direct Link  |  

  915. Im, Y.H., Y.B. Hahn and S.J. Pearton, 2001. Level set approach to simulation of feature profile evolution in a high-density plasma-etching system. J. Vacuum Sci. Technol. B: Microelect. Nanometer Struct. Proces. Measur. Phenomena, Vol. 19. 10.1116/1.1370174.
    CrossRef  |  Direct Link  |  

  916. Hsu, C.H., K.P. Ip, J.W. Johnson, S.N.G. Chu and O. Kryliouk et al., 2001. Wet chemical etching of LiGaO2 and LiAlO2. Electrochem. Solid-State Lett., 4: C35-C38.
    CrossRef  |  Direct Link  |  

  917. Hsu, C.H., C.C. Chen, B. Luo, F. Ren and S.J. Pearton et al., 2001. Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors. Solid-State Electron., 45: 275-279.
    CrossRef  |  Direct Link  |  

  918. Hobson, W.S., J. Lopata, L.M.F. Chirovsky, S.N.G. Chu and G. Dang et al., 2001. Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs. Solid-State Elect., 45: 1639-1644.
    CrossRef  |  Direct Link  |  

  919. Gila, B.P., J.W. Johnson, R. Mehandru, B. Luo and A.H. Onstine et al., 2001. Gadolinium oxide and scandium oxide: Gate dielectrics for GaN MOSFETs. Phys. Status Solidi (A)., 188: 236-242.
    CrossRef  |  Direct Link  |  

  920. Dang, G., W.S. Hobson, L.M.F. Chirovsky, J. Lopata and M. Tayahi et al., 2001. High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers. IEEE Photonics Technol. Lett., 13: 924-926.
    CrossRef  |  Direct Link  |  

  921. Dang, G., H. Cho, K.P. Ip, S.J. Pearton and S.N.G. Chu et al., 2001. Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed bragg reflectors for vertical-cavity surface-emitting lasers. J. Electrochem. Soc., 148: G25-G28.
    CrossRef  |  Direct Link  |  

  922. Dang, G., B. Luo, F. Ren, W.S. Hobson, J. Lopata, S.N.G. Chu and S.J. Pearton, 2001. Device series resistance calculations for vertical cavity surface-emitting lasers. Electrochem. Solid-State Lett., 4: G112-G114.
    CrossRef  |  Direct Link  |  

  923. Cho, H., K.P. Lee, P. Leerungnawarat, S.N.G. Chu, F. Ren, S.J. Pearton and C.M. Zetterling, 2001. High density plasma via hole etching in SiC. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, Vol. 19. 10.1116/1.1359539.
    CrossRef  |  Direct Link  |  

  924. Chernyak, L., A. Osinsky, S.J. Pearton and F. Ren, 2001. Phototransistor measurements in AlGaN/GaN HBTs. Elect. Lett., 37: 1411-1412.
    CrossRef  |  Direct Link  |  

  925. Chang, P.C., N.Y. Li, A.G. Baca, H.Q. Hou and C. Monier et al., 2001. Device characteristics of the GaAs/InGaAsN/GaAs pnp double heterojunction bipolar transistor. IEEE Elect. Dev. Lett., 22: 113-115.
    CrossRef  |  Direct Link  |  

  926. Baik, K.H., P.Y. Park, B.P. Gila, J.H. Shin and C.R. Abernathy et al., 2001. Comparison of plasma etch chemistries for MgO. Applied Surface Sci., 183: 26-32.
    CrossRef  |  Direct Link  |  

  927. Baik, K.H., P.Y. Park, B. Luo, K.P. Lee and J.H. Shin et al., 2001. Effect of PECVD of SiO2 passivation layers on GaN and InGaP. Solid-State Elect., 45: 2093-2096.
    CrossRef  |  Direct Link  |  

  928. Zhang, A.P., X.A. Cao, G. Dang, F. Ren and J. Han et al., 2000. Temperature dependence and current transport mechanisms in AlxGa1-x N Schottky rectifiers. MRS Online Proc. Library Arch., Vol. 622. 10.1557/PROC-622-T2.7.1.
    CrossRef  |  Direct Link  |  

  929. Zhang, A.P., G.T. Dang, X.A. Cao, H. Cho and F. Ren et al., 2000. Processing and device performance of GaN power rectifiers. Mater. Res. Soc. Internet J. Nitride Semicond. Res., 5: 838-844.

  930. Zhang, A.P., G.T. Dang, F. Ren, J.M. van Hove and J.J. Klaassen et al., 2000. Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, 18: 1149-1152.
    CrossRef  |  Direct Link  |  

  931. Zhang, A.P., G.T. Dang, F. Ren, J. Han and A.G. Baca et al., 2000. Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors. Applied Phys. Lett., 76: 2943-2945.
    CrossRef  |  Direct Link  |  

  932. Zhang, A.P., G. Dang, F. Ren, X.A. Cao and H. Cho et al., 2000. Cl2/Ar high‐density‐plasma damage in GaN schottky diodes. J. Electrochem. Soc., 147: 719-722.
    CrossRef  |  Direct Link  |  

  933. Zhang, A.P., G. Dang, F. Ren, J. Han and H. Cho et al., 2000. Forward turn-on and reverse blocking characteristics of GaN Schottky and pin rectifiers. Solid-State Electron., 44: 1157-1161.
    CrossRef  |  Direct Link  |  

  934. Zhang, A.P., G. Dang, F. Ren, J. Han and A.Y. Polyakov et al., 2000. Al composition dependence of breakdown voltage in Alx Ga1− x N Schottky rectifiers. Applied Phys. Lett., 76: 1767-1769.
    CrossRef  |  Direct Link  |  

  935. Zeitouny, A., M. Eizenberg, S.J. Pearton and F. Ren, 2000. Contact resistivity and transport mechanisms in W contacts to p-and n-GaN. J. Applied Phys., 88: 2048-2053.
    CrossRef  |  Direct Link  |  

  936. Zavada, J.M., M. Thaik, U. Hommerich, J.D. MacKenzie, C.R. Abernathy and S.J. Pearton, 2000. Thermal quenching in GaN(Er). Alloys Compd., Vol. 207. .

  937. Trivedi, V.P., C.H. Hsu, B. Luo, X. Cao and J.R. LoRache et al., 2000. The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics. Solid-State Electron., 4: 2101-2108.
    CrossRef  |  Direct Link  |  

  938. Shul, R.J., L. Zhang, A.G. Baca, C.G. Willison, J.U.N.G. Han, S.J. Pearton and F. Ren, 2000. Inductively coupled plasma-induced etch damage of GaN pn junctions. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 18: 1139-1143.

  939. Shul, R.J. and S.J. Pearton, 2000. Handbook of Advanced Plasma Processing Techniques. Springer, Berlin.

  940. Ren, F., J. Han, R. Hickman, J.M. van Hove and P.P. Chow et al., 2000. GaN/AlGaN HBT fabrication. Solid-State Electron., 44: 239-244.
    CrossRef  |  Direct Link  |  

  941. Ren, F., A.P. Zhang, G.T. Dang, X.A. Cao and H. Cho et al., 2000. Surface and bulk leakage currents in high breakdown GaN rectifiers. Solid-State Electron., 44: 619-622.
    CrossRef  |  Direct Link  |  

  942. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, G. Dang and A.P. Zhang et al., 2000. Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers. J. Vacuum Sci. Technol. B, 18: 1237-1243.
    CrossRef  |  Direct Link  |  

  943. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.P. Zhang and F. Ren et al., 2000. Unusual behavior of the electrical properties of GaN pin rectifiers caused by the presence of deep centers and by migration of shallow donors. Solid-State Electron., 44: 1549-1555.
    CrossRef  |  Direct Link  |  

  944. Polyakov, A.Y., N.B. Smirnov, A.V. Govorkov, A.P. Zhang and F. Ren et al., 2000. Spatial distribution of electrical properties in GaN pin rectifiers. Solid-State Electron., 44: 1591-1595.
    CrossRef  |  Direct Link  |  

  945. Pearton, S.J., R.J. Shul and F. Ren, 2000. A review of dry etching of GaN and related materials. Mater. Res. Soc. Int. J. Nitride Semiconductor Res., Vol. 5. 10.1557/S1092578300000119.
    CrossRef  |  

  946. Pearton, S.J., F. Ren, A.P. Zhang and K.P. Lee, 2000. Fabrication and performance of GaN electronic devices. Mater. Sci. Eng.: R: Rep., 30: 55-212.
    CrossRef  |  Direct Link  |  

  947. Pearton, S.J., F. Ren, A. Zhang, G. Dang and X. Cao et al., 2000. GaN electronics for high power, high temperature application. Electrochem. Soc. Interface, 9: 34-41.

  948. Pearton, S.J., 2000. Processing of Wide Bandgap Semiconductors. Noyes, New Jersey.

  949. Pearton, S.J. and F. Ren, 2000. GaN electronics. Adv. Mater., 12: 1571-1580.
    CrossRef  |  Direct Link  |  

  950. Park, Y.D., K.B. Jung, M. Overberg, D. Temple, S.J. Pearton and P.H. Holloway, 2000. Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques. J. Vacuum Sci. Technol. B, 18: 16-20.
    CrossRef  |  Direct Link  |  

  951. Overberg, M.E., J. Brand, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and J.M. Zavada, 2000. The effect of Er concentration on the morphology and photoluminescence of GaN: Er. J. Electrochem. Soc., 147: 3117-3119.
    CrossRef  |  Direct Link  |  

  952. Overberg, M.E., C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, 2000. Photoluminescence enhancement and morphological properties of carbon codoped GaN: Er. Mater. Res. Soc. Internet J. Nitride Semicond. Res., 5: 810-816.

  953. Nakamura, S., S.J. Pearton and G. Fasol, 2000. The Blue Laser Diode. Springer, Berlin.

  954. Monier, C., S.J. Pearton, P.C. Chang, A.G. Baca and F. Ren, 2000. Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors. Applied Phys. Lett., 76: 3115-3117.
    CrossRef  |  Direct Link  |  

  955. Monier, C., P.C. Chang, N.Y. Li, J.R. LaRoche and A.G. Baca et al., 2000. Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications. Solid-State Electron., 44: 1515-1521.
    CrossRef  |  Direct Link  |  

  956. Lorenz, K., R. Vianden, S.J. Pearton, C.R. Abernathy and J.M. Zavada, 2000. Defect trapping and annealing for transition metal implants in group III nitrides. Mater. Res. Soc. Int. J. Nitride Semiconductor Res., Vol. 5. 10.1557/S1092578300000053.
    CrossRef  |  

  957. Leerungnawarat, P., H. Cho, S.J. Pearton, C.M. Zetterling and M. Ostling, 2000. Effect of UV light irradiation on SiC dry etch rates. J. Electron. Mater., 29: 342-346.
    CrossRef  |  Direct Link  |  

  958. Leerungnawarat, P., H. Cho, D.C. Hays, J.W. Lee and M.W. Devre et al., 2000. Selective dry etching of InGaP over GaAs in inductively coupled plasmas. J. Electron. Mater., 29: 586-590.
    CrossRef  |  Direct Link  |  

  959. Lee, K.P., K.B. Jung, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, 2000. Comparison of plasma chemistries for dry etching of Ta2O5. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 18: 1169-1172.
    CrossRef  |  Direct Link  |  

  960. Lee, K.P., H. Cho, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, 2000. Ultraviolet light enhancement of Ta2O5 dry etch rates. J. Vacuum Sci. Technol. B, 18: 293-295.
    CrossRef  |  

  961. Lee, K.N., X.A. Cao, C.R. Abernathy, S.J. Pearton and A.P. Zhang et al., 2000. Effect of thermal stability of GaN epi-layer on the Schottky diodes. Solid-State Electron., 44: 1203-1208.
    CrossRef  |  Direct Link  |  

  962. Lee, J.W., M.W. Devre, B.H. Reelfs, D. Johnson and J.N. Sasserath et al., 2000. Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 18: 1220-1224.
    CrossRef  |  Direct Link  |  

  963. Lee, J.W., K.D. Mackenzie, D. Johnson, J.N. Sasserath, S.J. Pearton and F. Ren, 2000. Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition. J. Electrochem. Soc., 147: 1481-1486.
    CrossRef  |  Direct Link  |  

  964. LaRoche, J.R., F. Ren, R. Lothian, J. Hong and S.J. Pearton et al., 2000. Thermal stability and etching characteristics of electron beam deposited SiO and SiO2. J. Vacuum Sci. Technol. B, 18: 283-287.
    CrossRef  |  Direct Link  |  

  965. LaRoche, J.R., F. Ren, D. Temple, S.J. Pearton and J.M. Kuo et al., 2000. Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors. Solid-State Electron., 44: 2117-2122.
    CrossRef  |  Direct Link  |  

  966. Kucheyev, S.O., J.S. Williams, C. Jagadish, G. Li and S.J. Pearton, 2000. Strong surface disorder and loss of N produced by ion bombardment of GaN. Applied Phys. Lett., 76: 3899-3901.
    CrossRef  |  Direct Link  |  

  967. Jung, K.B., J. Marburger, F. Sharifi, Y.D. Park, E.S. Lambers and S.J. Pearton, 2000. Long term stability of dry etched magnetoresistive random access memory elements. J. Vacuum Sci. Technol. A, 18: 268-272.
    CrossRef  |  Direct Link  |  

  968. Johnson, J.W., B. Luo, F. Ren, B.P. Gila and W. Krishnamoorthy et al., 2000. Gd2O3/GaN metal-oxide-semiconductor field-effect transistor. Applied Phys. Lett., 77: 3230-3232.
    CrossRef  |  Direct Link  |  

  969. Hickman, R., J.M. van Hove, P.P. Chow, J.J. Klaassen et al., 2000. GaN PN junction issues and developments. Solid-State Electron., 44: 377-381.
    CrossRef  |  Direct Link  |  

  970. Hays, D.C., P. Leerungnawarat, S.J. Pearton, G. Archibald and R.C. Smythe, 2000. Surface morphology and removal rates for dry-and wet-etched novel resonator materials: Part I: La3Ga5.5Ta0.5O14. Applied Surf. Sci., 165: 127-134.
    CrossRef  |  Direct Link  |  

  971. Hays, D.C., K.P. Lee, B.P. Gila, F. Ren, C.R. Abernathy and S.J. Pearton, 2000. Dry etch selectivity of Gd2O3 to GaN and AlN. J. Electron. Mater., 29: 285-290.
    CrossRef  |  Direct Link  |  

  972. Hays, D.C., H. Cho, J.W. Lee, M.W. Devre and B.H. Reelfs et al., 2000. High selectivity inductively coupled plasma etching of GaAs over InGaP. Applied Surf. Sci., 156: 76-84.
    CrossRef  |  Direct Link  |  

  973. Hahn, Y.B., D.C. Hays, H. Cho, K.B. Jung and E.S. Lambers et al., 2000. Inductively coupled plasma etching in ICl-and IBr-based chemistries. Part II: InP, InSb, InGaP and InGaAs. Plasma Chem. Plasm. Proc., 20: 417-427.
    CrossRef  |  Direct Link  |  

  974. Hahn, Y.B., D.C. Hays, H. Cho, K.B. Jung and E.S. Lambers et al., 2000. Inductively coupled plasma etching in ICl-and IBr-based chemistries. Part I: GaAs, GaSb and AlGaAs. Plasma Chem. Plasm. Proc., 20: 405-415.
    CrossRef  |  Direct Link  |  

  975. Hahn, Y.B. and S.J. Pearton, 2000. A unified global self-consistent model of a capacitively and inductively coupled plasma etching system. Korean J. Chem. Eng., 17: 304-309.
    CrossRef  |  Direct Link  |  

  976. Gilbert, D.R., A. Novikov, N. Patrin, J.S. Budai and F. Kelly et al., 2000. High-pressure process to produce GaN crystals. Applied Phys. Lett., 77: 4172-4174.
    CrossRef  |  Direct Link  |  

  977. Dang, G.T., A.P. Zhang, M.M. Mshewa, F. Ren and J.I. Chyi et al., 2000. High breakdown voltage Au/Pt/GaN Schottky diodes. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 18: 1135-1138.
    CrossRef  |  Direct Link  |  

  978. Dang, G.T., A.P. Zhang, F. Ren, X.A. Cao and S.J. Pearton et al., 2000. High voltage GaN schottky rectifiers. IEEE Trans. Electron Devices, 47: 692-696.
    CrossRef  |  Direct Link  |  

  979. Dang, G.T., A.P. Zhang, F. Ren, S.M. Donovan and C.R. Abernathy et al., 2000. p-Ohmic contact resistance for GaAs (C)/GaN (Mg). Solid-State Electron., 44: 105-109.
    CrossRef  |  Direct Link  |  

  980. Dang, G., B. Luo, A.P. Zhang, X.A. Cao and F. Ren et al., 2000. npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions. Solid-State Electron., 44: 2097-2100.
    CrossRef  |  Direct Link  |  

  981. Chyi, J.I., C.M. Lee, C.C. Chuo, X.A. Cao and G.T. Dang et al., 2000. Temperature dependence of GaN high breakdown voltage diode rectifiers. Solid-State Electron., 44: 613-617.
    CrossRef  |  Direct Link  |  

  982. Cho, H., P. Leerungnawarat, D.C. Hays, S.J. Pearton and S.N.G. Chu et al., 2000. Ultradeep, low-damage dry etching of SiC. Applied Phys. Lett., 76: 739-741.
    CrossRef  |  Direct Link  |  

  983. Cho, H., K.P. Lee, Y.B. Hahn, E.S. Lambers and S.J. Pearton, 2000. Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers. J. Vacuum Sci. Technol. A: Vacuum Surf. Films, 18: 1273-1277.
    CrossRef  |  Direct Link  |  

  984. Cho, H., K.P. Lee, K.B. Jung, S.J. Pearton and J. Marburger et al., 2000. Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination. J. Applied Phys., 87: 6397-6399.
    CrossRef  |  Direct Link  |  

  985. Cho, B.C., Y.H. Im, Y.B. Hahn, K.S. Nahm, Y.S. Lee and S.J. Pearton, 2000. Inductively coupled plasma etching of doped GaN films with Cl2/Ar discharges. J. Electrochem. Soc., 147: 3914-3916.
    CrossRef  |  Direct Link  |  

  986. Cao, X.A., S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.G. Wilson and J.M. van Hove, 2000. Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr. J. Applied Phys., 87: 1091-1095.
    CrossRef  |  Direct Link  |  

  987. Cao, X.A., S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren and J.M. Van Hove, 2000. GaN n-and p-type Schottky diodes: Effect of dry etch damage. IEEE Trans. Electron Dev., 47: 1320-1324.
    CrossRef  |  Direct Link  |  

  988. Cao, X.A., S.J. Pearton, G.T. Dang, A.P. Zhang and F. Ren et al., 2000. Surface conversion effects in plasma-damaged p-GaN. Mater. Res. Soc. Internet J. Nitride Semicond. Res., 5: 558-569.

  989. Cao, X.A., J.M. van Hove, J.J. Klaassen, C.J. Polley and A.M. Wowchak et al., 2000. Simulation of GaN/AlGaN heterojunction bipolar transistors: Part I–npn structures. Solid-State Electron., 44: 1255-1259.
    CrossRef  |  Direct Link  |  

  990. Cao, X.A., J.M. van Hove, J.J. Klaassen, C.J. Polley and A.M. Wowchak et al., 2000. Simulation of GaN/AlGaN heterojunction bipolar transistors: Part II–pnp structures. Solid-State Electron., 44: 1261-1265.
    CrossRef  |  Direct Link  |  

  991. Cao, X.A., J.M. van Hove, J.J. Klaassen, C.J. Polley and A.M. Wowchack et al., 2000. High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors. Solid-State Electron., 44: 649-654.
    CrossRef  |  Direct Link  |  

  992. Cao, X.A., G.T. Dang, A.P. Zhang, F. Ren and S.J. Pearton et al., 2000. Temperature dependent performance of GaN Schottky diode rectifiers. Mater. Sci. Forum, 338: 1631-1634.

  993. Cao, X.A., G.T. Dang, A.P. Zhang, F. Ren and J.M. van Hove et al., 2000. High current, common‐base GaN‐AIGaN heterojunction bipolar transistors. Electrochem. Solid-State Lett., 3: 144-146.
    CrossRef  |  Direct Link  |  

  994. Cao, X.A., G.T. Dang, A.P. Zhang, F. Ren and C.R. Abernathy et al., 2000. Common‐base operation of GaN bipolar junction transistors. Electrochem. Solid-State Lett., 3: 333-334.
    CrossRef  |  Direct Link  |  

  995. Cao, X.A., A.P. Zhang, G.T. Dang, F. Ren, S.J. Pearton, R.J. Shul and L. Zhang, 2000. Schottky diode measurements of dry etch damage in n-and p-type GaN. J. Vacuum Sci. Technol. A, 18: 1144-1148.
    CrossRef  |  Direct Link  |  

  996. Cao, X.A., A.P. Zhang, G.T. Dang, F. Ren and S.J. Pearton et al., 2000. Plasma damage in p-GaN. J. Electron. Mater., 29: 256-261.
    CrossRef  |  Direct Link  |  

  997. Wilson, R.G., J.M. Zavada, X.A. Cao, R.K. Singh and S.J. Pearton et al., 1999. Redistribution and activation of implanted S, Se, Te, Be, Mg and C in GaN. J. Vacuum Sci. Technol. A, 17: 1226-1229.
    CrossRef  |  Direct Link  |  

  998. Weinstein, M.G., M. Stavola, C.Y. Song, C. Bozdog and H. Przbylinska et al., 1999. Spectroscopy of proton implanted GaN. MRS Int. J. Nitride Semicond. Res., 4: 542-547.
    CrossRef  |  

  999. Wang, J.J., H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen and E.S. Gillman, 1999. Iodine-and bromine-based dry etching of LaCaMnO3. Plasma Chem. Plasma Proc., 19: 229-239.
    CrossRef  |  Direct Link  |  

  1000. Shul, R.J., L. Zhang, C.G. Willison, J. Han, S.J. Pearton, J. Hong and C.R. Abernathy, 1999. Group-III nitride ETCH selectivity in BCl/Cl ICP plasmas. Mater. Res. Soc. Int. J. Nitride Semiconductor Res., 4: 823-833.
    CrossRef  |  Direct Link  |  

  1001. Shen, H., J. Pamulapati, M. Taysing, M.C. Wood and R.T. Lareau et al., 1999. 1.55 μm Er-doped GaN LED. Solid-State Electron., 43: 1231-1234.
    CrossRef  |  Direct Link  |  

  1002. Ren, F., S.J. Pearton, C.R. Abernathy, A. Baca and P. Cheng et al., 1999. GaN MOSFETs. Solid-State Electron., 43: 1817-1820.

  1003. Ren, F., M.J. Antonell, C.R. Abernathy, S.J. Pearton and J.R. LaRoche et al., 1999. Nonalloyed high temperature ohmic contacts on Te-doped InP. Applied Phys. Lett., 74: 1845-1847.
    CrossRef  |  Direct Link  |  

  1004. Ren, F., J.R. Lothian, S.J. Pearton, R.G. Wilson and J.R. LaRoche et al., 1999. Novel in situ ion bombardment process for a thermally stable (> 800 degrees C) plasma deposited dielectric. Electrochem. Solid-State Lett., 2: 537-537.

  1005. Pearton, S.J., J.C. Zolper, R.J. Shul and F. Ren, 1999. GaN: Processing, defects and devices. J. Applied Phys., 86: 1-78.
    CrossRef  |  Direct Link  |  

  1006. Pearton, S.J., H. Cho, J.R. LaRoche, F. Ren, R.G. Wilson and J.W. Lee, 1999. Oxygen diffusion into SiO2-capped GaN during annealing. Applied Phys. Lett., 75: 2939-2939.

  1007. Pearton, S.J., C.R. Abernathy, R.G. Wilson, J.M. Zavada and C.Y. Song et al., 1999. Effects of hydrogen implantation into GaN. Nuclear Instruments Methods Phys. Res. Sect. B, 147: 171-174.
    CrossRef  |  Direct Link  |  

  1008. Pearton, S.J., 1999. GaN and Related Materials. Vol. 2. Gordon and Breach, New York.

  1009. Park, Y.D., D. Temple, K.B. Jung, D. Kumar, P.H. Holloway and S.J. Pearton, 1999. Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures. J. Vacuum Sci. Technol. B, 17: 2471-2475.
    CrossRef  |  Direct Link  |  

  1010. Meyer, L.C., J.W. Lee, D. Johnson, M. Huang and F. Ren et al., 1999. Study of NH3 plasma damage on GaAs schottky diode in inductively coupled plasma system. J. Electrochem. Soc., 146: 2717-2719.
    CrossRef  |  Direct Link  |  

  1011. Maeda, T., H. Cho, J. Hong and S.J. Pearton, 1999. New plasma chemistries for etching III-V compound semiconductors: Bl3 and BBr3. J. Electron. Mater., 28: 118-123.
    CrossRef  |  Direct Link  |  

  1012. Leerungnawarat, P., D.C. Hays, H. Cho, S.J. Pearton, R.M. Strong, C.M. Zetterling and M. Ostling, 1999. Via-hole etching for SiC. J. Vacuum Sci. Technol. B, 17: 2050-2054.
    CrossRef  |  Direct Link  |  

  1013. Lee, K.P., K.B. Jung, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, 1999. Inductively coupled plasma etching of Ta2O5. J. Electrochem. Soc., 146: 3794-3798.
    CrossRef  |  Direct Link  |  

  1014. Lee, K.P., K.B. Jung, H. Cho, D. Kumar and S.V. Pietambaram et al., 1999. Cl2‐based dry etching of doped manganate perovskites: PrBaCaMnO3 and LaSrMnO3. J. Electrochem. Soc., 146: 2748-2751.
    CrossRef  |  Direct Link  |  

  1015. Lee, K.P., K.B. Jung, A. Srivastava, D. Kumar, R.K. Singh and S.J. Pearton, 1999. Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas. J. Electrochem. Soc., 146: 3778-3782.
    CrossRef  |  Direct Link  |  

  1016. Lee, J.W., R. Westerman, K.D. Mackenzie, J.F. Donohue and D. Johnson et al., 1999. 905 nm wavelength laser as a means for in situ end‐point detection of dry etching of Al x Ga1- x As on GaAs. Electrochem. Solid-State Lett., 2: 640-641.
    CrossRef  |  Direct Link  |  

  1017. Lee, J.W., K.D. Mackenzie, D. Johnson, R.J. Shul and Y.B. Hahn et al., 1999. Damage to III-V devices during electron cyclotron resonance chemical vapor deposition. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, 17: 2183-2187.
    CrossRef  |  Direct Link  |  

  1018. Lee, J.W., J.F. Donohue, K.D. Mackenzie, R. Westerman, D. Johnson and S.J. Pearton, 1999. Mechanism of high density plasma processes for ion-driven etching of materials. Solid-State Electron., 43: 1769-1775.
    CrossRef  |  Direct Link  |  

  1019. LaRoche, J.R., F. Ren, J.R. Lothian, J. Hong, S.J. Pearton and E. Lambers, 1999. The use of amorphous SiO and SiO2 to passivate AuGe based contact for GaAs integrated circuits. Electrochem. Solid-State Lett., 2: 395-397.
    CrossRef  |  Direct Link  |  

  1020. Kim, J.H., E.J. Kim, H.C. Choi, C.W. Kim and J.H. Cho et al., 1999. Evaluation of fluorinated polyimide etching processes for optical waveguide fabrication. Thin Solid Films, 341: 192-195.
    CrossRef  |  Direct Link  |  

  1021. Jung, K.B., J. Hong, J.R. Childress, S.J. Pearton, F. Sharifi, M. Jenson and A.T. Hurst Jr, 1999. Plasma etching of NiFe/Cu and NiMnSb/Al2O3 multilayers for sub-micron pattern definition. J. Magnetism Magnetic Mater., 198: 204-206.
    CrossRef  |  Direct Link  |  

  1022. Jung, K.B., J. Hong, H. Cho, J.A. Caballero and J.R. Childress et al., 1999. High density plasma etching of NiFe, NiFeCo and NiMnSb-based multilayers for magnetic storage elements. Applied Surface Sci., 138: 111-116.
    CrossRef  |  Direct Link  |  

  1023. Jung, K.B., J. Hong, A.H. Cho, S. Onishi and D. Johnson et al., 1999. Patterning of NiFe and NiFeCo in CO/NH3 high density plasmas. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, 17: 535-539.
    CrossRef  |  Direct Link  |  

  1024. Jung, K.B., H. Cho, Y.B. Hahn, E.S. Lambers and S. Onishi et al., 1999. Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements. J. Applied Phys., 85: 4788-4790.
    CrossRef  |  Direct Link  |  

  1025. Jung, K.B., H. Cho, Y.B. Hahn, D.C. Hays and E.S. Lambers et al., 1999. Comparison of Cl2/He, Cl2/Ar and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo. J. Electrochem. Soc., 146: 1465-1468.
    CrossRef  |  Direct Link  |  

  1026. Jung, K.B., H. Cho, K.P. Lee, J. Marburger and F. Sharifi et al., 1999. Development of chemically assisted dry etching methods for magnetic device structures. J. Vacuum Sci. Technol. B, 17: 3186-3189.
    CrossRef  |  Direct Link  |  

  1027. Jung, K.B., A.J. Hong, H. Cho, S. Onishi and D. Johnson et al., 1999. Parametric study of NiFe and NiFeCo high density plasma etching using CO/NH3. J. Electrochem. Soc., 146: 2163-2168.
    CrossRef  |  Direct Link  |  

  1028. Hong, J., R.J. Shul, L. Zhang, L.F. Lester and H. Cho et al., 1999. Plasma chemistries for high density plasma etching of SiC. J. Electron. Mater., 28: 196-201.
    CrossRef  |  Direct Link  |  

  1029. Hong, J., J.A. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, 1999. Comparison of Cl2 and F2 based chemistries for the inductively coupled plasma etching of NiMnSb thin films. J. Vacuum Sci. Technol. A: Vacuum Surfaces Films, 17: 1326-1330.
    CrossRef  |  Direct Link  |  

  1030. Hommerich, U., M. Thaik, G. Bondu, J. Prejean and J. Seo et al., 1999. Optical characterization of er-doped III-nitrides prepared by MOMBE. MRS Internet J. Nitride Semicond. Res., 4: 952-961.
    CrossRef  |  

  1031. Hays, D.C., K.B. Jung, Y.B. Hahn, E.S. Lambers and S.J. Pearton et al., 1999. Comparison of F2‐based gases for high‐rate dry etching of Si. J. Electrochem. Soc., 146: 3812-3816.
    CrossRef  |  Direct Link  |  

  1032. Hays, D.C., H. Cho, K.B. Jung, Y.B. Hahn and C.R. Abernathy et al., 1999. Selective dry etching using inductively coupled plasmas: Part II. InN/GaN and InN/AlN. Applied Surface Sci., 147: 134-139.
    CrossRef  |  Direct Link  |  

  1033. Hays, D.C., H. Cho, K.B. Jung, Y.B. Hahn and C.R. Abernathy et al., 1999. Selective dry etching using inductively coupled plasmas: Part I. GaAs/AlGaAs and GaAs/InGaP. Applied Surface Sci., 147: 125-133.
    CrossRef  |  Direct Link  |  

  1034. Hays, D.C., H. Cho, J.W. Lee, M.W. Devre and B.H. Reelfs et al., 1999. /InGaP selective etching in BCl3/SF6 high‐density plasmas. Electrochem. Solid-State Lett., 2: 587-588.
    CrossRef  |  Direct Link  |  

  1035. Han, J., A.G. Baca, R.J. Shul, C.G. Willison and L. Zhang et al., 1999. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Applied Phys. Lett., 74: 2702-2704.
    CrossRef  |  Direct Link  |  

  1036. Hahn, Y.B., J.W. Lee, G.A. Vawter, R.J. Shul and C.R. Abernathy et al., 1999. Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2-Ar mixture. J. Vacuum Sci. Technol. B, 17: 366-371.
    CrossRef  |  Direct Link  |  

  1037. Hahn, Y.B., D.C. Hays, H. Cho, K.B. Jung, C.R. Abernathy, S.J. Pearton and R.J. Shul, 1999. Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors: Part II. InP, InSb, InGaP and InGaAs. Applied Surface Sci., 147: 215-221.
    CrossRef  |