Dr. Sabah  M. Thahab

Dr. Sabah M. Thahab

Lecturer
University of Kufa, Iraq


Highest Degree
Ph.D. in Physical Science Engineering from University of Kufa, Iraq

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Area of Interest:

Physical Science Engineering
100%
Nanotechnology
62%
Material Science
90%
Optics
75%
Heat Transfer
55%

Education

2005

Ph.D.

University of Kufa, Iraq

Physical Science Engineering

Selected Publications

  1. Thahab, S.M., 2019. Influence of surface morphology on the optical properties of antireflection coatingformed by porous silicon layer and ZnO nanocoulms/porous silicon. J. Eng. Applied Sci., 14: 1800-1804.
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  2. Thahab, S.M., 2018. Surface morphology effect on the optical properties of III-nitrides nanostructures for photo-sensing applications. Sensor Lett., 16: 76-79.
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  3. Abeer, K.A., S.N. Whid and S.M. Thahab, 2018. Effect of silver nanoparticles on the morphology and structural properties of PVP polymer nanof-fiber prepared by electrospining method. J. Pharm. Sci. Res., 10: 2183-2186.
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  4. Thahab, S.M., 2017. Synthesis and characterization of AG metal nanoparticles prepared in different solutions using Nd-YAG pulsed laser. Aust. J. Basic Applied Sci., 11: 16-20.

  5. Diwan, A.A., A.K.F. Hassan and S.M. Thahab, 2017. Experimental study of temperature effect and curing time on the shear strength of adhesive joints by polyvinyl pyrrolidone PVP K30. Kufa J. Eng., 8: 53-66.
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  6. Alsabari, I.K.A., S.M. Thahab, A. Al-Shammari, B.H. Saadoon and Z. Allebban, 2017. Nano-drug delivery system as a model for the treatment of breast cancer. Breast, 32: 28-29.
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  7. Thahab, S.M., H.O.A. Adel and A.Z. Inass, 2016. Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique. Mater. Sci. Semicond. Process., 41: 436-440.
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  8. Thahab, S.M., A.H.O. Alkhayat and I.A. Zgair, 2016. Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique. J. Mater. Sci. Semicond. Process., 41: 436-440.
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  9. Alkhayatta, A.H.O., M.T. Sabah and A.Z. Inass, 2016. Structure, surface morphology and optical properties of post-annealed delafossite CuFeO2 thin films. Optik, 127: 3745-3749.
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  10. Alkhayatt, A.H.O., S.M. Thahab and I.A. Zgair, 2016. Structure, surface morphology and optical properties of post-annealed delafossite CuFeO2 thin films. Optik-Int. J. Light Electron Optics, 127: 3745-3749.
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  11. Abdulwahab, M.I., S.M. Thahab and A.H. Dhiaa, 2016. Experimental study of thermophysical properties of TiO2 nanofluid. Iraqi J. Chem. Pet. Eng., 17: 1-6.
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  12. Dhiaa, A.H., I.A. Majid, A. Wahab and S.M. Thahab, 2015. Study the convective heat transfer of TiO2/water nanofluid in heat exchanger system. E Eng. Tech. J., 33: 1319-1323.
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  13. Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. The optical properties of CdxZn1-xSS thin films on glass substrate prepared by spray pyrolysis method. Optik, 125: 5112-5115.
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  14. Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. Influence of substrate type on the structural ,optical and electrical properties of CdxZn1-xS MSM thin films prepared by spray pyrolysis method. Mater. Sci. Semicond. Process., 26: 49-54.
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  15. Alahyarizadeh, G., Z. Hassan, S.M. Thahab, F.K. Yam and A.J. Ghazai, 2014. Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers. Optik-Int. J. Light Elect. Optics, 125: 341-344.
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  16. Alahyarizadeh, G., Z. Hassan, S.M. Thahab and F.K. Yam, 2014. Improvement of performance characteristics of deep violet InGaN DQW lasers using a strip DQW active region. Optik-Int. J. Light Elect. Optics, 125: 4911-4915.
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  17. Alahyarizadeh, G., H. Zainuriah, S.M. Thahab, M. Amirhoseiny and A.J. Ghazai, 2013. Effects of cavity length on optical characteristics of deep violet InGaN DQW lasers. Adv. Mater. Res., 626: 605-609.
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  18. Shekari, L., H.A. Hassan, S.M. Thahab, A.J. Ghazai and Z. Hassan, 2012. Growth and analysis of GaN nanowire on PZnO by different-gas flow. Applied Surf. Sci., 258: 6590-6594.
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  19. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2012. The effects of quantum wells number and the built-in polarization on the performance of quaternary AlInGaN UV laser diode. Optik-Int. J. Light Elect. Optics, 123: 856-859.
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  20. Alahyarizadeh, G.H., Z. Hassan, S.M. Thahab, M. Amirhoseiny and N. Naderi, 2012. Comparative study of the performance characteristics of green ingan sqw laser diodes with ternary algan and quaternary alingan electron blocking layer. Digest J. Nanomater. Biostruct., 7: 1869-1880.
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  21. Alahyarizadeh, G., Z. Hassan, A.J. Ghazai, H. Mahmodi and S.M. Thahab, 2012. Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer. J. Nanophotonics, Vol. 6. .
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  22. Shekari, L., H.A. Hassan, S.M. Thahab and Z. Hassan, 2011. Growth and characterization of high-quality GaN nanowires on PZnO and PGaN by thermal evaporation. J. Nanomater., Vol. 62. .
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  23. Hussein, A.S., Z. Hassan, S.M. Thahab, S.S. Ng, H.A. Hassan and C.W. Chin, 2011. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Applied Surface Sci., 257: 4159-4164.
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  24. Hussein, A.S., Z. Hassan, S.M. Thahab, A. Hassan, M.A. Abid and C.W. Chin, 2011. Structural, optical and electrical properties of undoped and Si-doped AlxGa1-xN thin films on Si (1 1 1) substrate grown by PA-MBE. Phys. B: Condensed Matter, 406: 1267-1271.
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  25. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer. Opt. Express, 19: 9245-9254.
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  26. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. A study of the operating parameters and barrier thickness of Al0.08 In0.08 Ga0.84N/AlxInyGa1-x-y N double quantum well laser diodes. Sci. China Technol. Sci., 54: 47-51.
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  27. Jandow, N.N., K.A. Ibrahim, H.A. Hassan, S.M. Thahab and O.S. Hamad, 2010. The electrical properties of ZnO MSM photodetector with Pt contact electrodes on PPC plastic. J. Elect. Devices, 7: 225-229.

  28. Jandow, N.N., F.K. Yam, S.M. Thahab, K. Ibrahim and H.A. Hassan, 2010. The characteristics of ZnO deposited on PPC plastic substrate. Mater. Lett., 64: 2366-2368.
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  29. Jandow, N.N., F.K. Yam, S.M. Thahab, H.A. Hassan and K. Ibrahim, 2010. Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on Poly Propylene Carbonate (PPC) plastic substrate. Curr. Applied Phys., 10: 1452-1455.
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  30. Hussein, A.S., Z. Hassan, S.S. Ng, S.M. Thahab, C.W. Chin and H. Abu Hassan, 2010. PA-MBE growth and characterization of high Si-doped AlGaN on Si(111) substrate. Optoelect. Adv. Mater.-Rapid Commun., 4: 59-62.

  31. Hussein, A.S., Z. Hassan, H.A. Hassan and S.M. Thahab, 2010. Electrical properties of AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) with and without mg-doped carrier confinement layer. Int. J. Nanosci., 9: 263-267.
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  32. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. Performance of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers. World Acad. Sci. Eng. Technol., 55: 11-15.
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  33. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InGaN/GaN laser diode characterization and quantum well number effect. Chinese Opt. Lett., 7: 226-230.

  34. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InAlGaN quaternary multi-quantum wells UV laser diode performance and characterization. World Acad. Sci. Eng. Technol., 55: 352-355.

  35. Hussein, A.SH., S.M. Thahab, Z. Hassan, C.W. Chin, H. Abu Hassan and S.S. Ng, 2009. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy. J. Alloys Compounds, 487: 24-27.
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  36. Chuah, L.S., Z. Hassan, H. Abu Hassan, F.K. Yam, C.W. Chin and S.M. Thahab, 2008. Barrier height enhanced GaN Schottky diodes using a thin AlN surface layer. Int. J. Modern Phys. B, 22: 5167-5173.
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  37. Chuah, L.S., Z. Hassan, H. Abu Hassan, C.W. Chin and S.M. Thahab, 2008. Large area GaN Metal Semiconductor Metal (MSM) photodiode using a thin low temperature GaN cap layer. J. Nonlinear Opt. Phys. Mater., 17: 59-69.
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  38. Thahab, S.M., H.A. Hassan and Z. Hassan, 2007. Performance and optical characteristic of InGaN MQWs laser diodes. Opt. Express, 15: 2380-2390.

  39. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. The performance of ingan laser diodes consists of a separate confinement heterostructure with a multiple quantum well active region. J. Solid State Sci. Technol. Lett., 14: 130-138.

  40. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. Influence of thick n-AlGaN contact layer on the performance of InGaN laser with diode modulation-doped strain-layer superlattices. J.Solid State Sci. Technol. Lett., Vol. 14. .